R. A. Stall

1.9k citations

72 papers · 1.6k indexed · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 42
- GaN-based semiconductor devices and materials 42
Atomic and Molecular Physics, and Optics 33
- Semiconductor Quantum Structures and Devices 27
- Semiconductor materials and interfaces 6

Co-authors: S. J. Pearton J.C. Zolper C. YUAN R. G. Wilson C. B. Vartuli J. S. Williams Albert G. Baca Hark Hoe Tan
Journals: Applied Physics Letters (11 papers)Journal of Applied Physics (5 papers)Journal of Electronic Materials (5 papers)Journal of Crystal Growth (3 papers)Materials Science and Engineering B (2 papers)
Partner nations: United States Australia Germany

In The Last Decade

R. A. Stall

67 papers receiving 1.5k citations

Peers

Countries citing papers authored by R. A. Stall

Since Specialization

Citations

This map shows the geographic impact of R. A. Stall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. A. Stall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. A. Stall more than expected).

Fields of papers citing papers by R. A. Stall

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. A. Stall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. A. Stall. The network helps show where R. A. Stall may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. A. Stall, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. A. Stall Line = papers co-authored together R. A. Stall links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Development of 1.3 μm oxide-confined VCSELs grown by MOCVD Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Christopher S. Murray, D. R. SHIN, W. Y. Loebl, Dora María Frías-Márquez, David Bossert, Eric O Maranga, P. Paci, R. A. Stall	2002	6
2	Implant activation and redistribution of dopants in GaN J.C. Zolper, S. J. Pearton, R. G. Wilson, R. A. Stall	2002	5
3	Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD C. A. Tran, R. F. Karlicek, M. Schurman, T. Salagaj, Amanda L. Thompson, R. A. Stall	2002	0
4	Si-implantation activation annealing of GaN up to 1400°C Journal of Electronic Materials ·J.C. Zolper, Jung Han, R. M. Biefeld, Vikram Trivedi, W.R. Wampler, Taisy de Agapito Rosa Delgado, S. J. Pearton, J. S. Williams, Hark Hoe Tan, R. F. Karlicek, R. A. Stall	1998	30
5	Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques Materials science forum ·Zhe Chuan Feng, Ian T. Ferguson, R. A. Stall, Fan Yichang, Yating Shi, Muhammad Adil, K. Tone, Jian Hui Zhao, Andrew T. S. Wee, Назгуль Нуржановна Кадримбетова, Fran Adar, Bruno Lenain	1998	1
6	Growth of GaN blue LEDs with in situ growth monitoring III-Vs Review ·R. F. Karlicek, M. Schurman, C. A. Tran, T. Salagaj, 孙玲莉, R. A. Stall	1997	1
7	Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, Dhirendra Kumar Das, Debbie Johan arredondo arteaga, Nathan Perkins, T. W. Weeks, Nathan Clarkson, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1997	3
8	Large scale manufacturing of compound semiconductors by MOVPE Journal of Crystal Growth ·Alan Thompson, R. A. Stall, Ts Yordanov, E. Armour, Марія Александрова, P. Zawadzki, L. Aina, weixing liu	1997	3
9	GaN and AlGaN metal–semiconductor–metal photodetectors Materials Science and Engineering B ·Ian T. Ferguson, C. A. Tran, R. F. Karlicek, И.В. Казаков, R. A. Stall, Songmiao Liang, Yicheng Lu, C. L. Joseph	1997	26
10	In-situ controls for MOVPE manufacturing III-Vs Review ·Alan Thompson, R. F. Karlicek, E. Armour, Ts Yordanov, P. Zawadzki, R. A. Stall	1996	5
11	The study of nonlinear optical effects of GaN and AlGaN epitaxial films O. Ruiz, Z Adeli, Yanhua Shih, M. Schurman, Zhengchun Peng, R. A. Stall	1996	0
12	The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor MRS Internet Journal of Nitride Semiconductor Research ·Sally Mohamed Farid Mahmoud, M. Schurman, Zhe Chuan Feng, R. F. Karlicek, T. Salagaj, C. A. Tran, R. A. Stall	1996	2
13	Sputtered AlN encapsulant for high-temperature annealing of GaN Applied Physics Letters ·J.C. Zolper, D. J. Rieger, Albert G. Baca, S. J. Pearton, J. W. Lee, R. A. Stall	1996	76
14	Surface Structure and Morphology of SrBi₂Ta₂O₉ (SBT) Thin Films MRS Proceedings ·Tingkai Li, Betty Wilson, R. A. Stall, M W Cnossen, Yongfei Zhu, Seshu B. Desu	1996	1
15	The scaling of CVD rotating disk reactors to large sizes and comparison with theory Journal of Electronic Materials ·Alan Thompson, R. A. Stall, P. Zawadzki, G.H. Evans	1996	27
16	A cost of ownership model for CVD processes III-Vs Review ·Alan Thompson, Ts Yordanov, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, R. A. Stall, Maria Eduarda B. Silva	1995	4
17	Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride MRS Proceedings ·Yuli Li, Yuangang Lu, H. Shen, Michael Wraback, Chawon Hwang, M. Schurman, W. E. Mayo, T. Salagaj, R. A. Stall	1995	5
18	Indium gallium arsenide microwave power transistors IEEE Transactions on Microwave Theory and Techniques ·Gregory A. Johnson, Vikram Kapoor, Mihai Svasta, L. Messick, K Yoshino, R. A. Stall, Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri	1991	10
19	Growth Of InGaAsP Films In A Multi-Wafer High-Speed Rotating Disk Reactor By MOCVD Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Salwa Abdul-Ghani Abdul-Rahman Al-Shamiri, J. K. Wagner, P. Norris, R. A. Stall	1989	1
20	Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitor Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Carolin Dempki, R. A. Stall, R. Malik, Sha She	1985	4

About R. A. Stall

R. A. Stall is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 72 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (42 papers), Semiconductor Quantum Structures and Devices (27 papers), Semiconductor materials and devices (26 papers), Metal and Thin Film Mechanics (9 papers), Ga2O3 and related materials (9 papers), ZnO doping and properties (7 papers), Semiconductor Lasers and Optical Devices (7 papers) and Semiconductor materials and interfaces (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (397 citations), Electrical and Electronic Engineering (970 citations), Mechanics of Materials (408 citations) and Atomic and Molecular Physics, and Optics (429 citations). R. A. Stall has collaborated with scholars based in United States, Australia and Germany. Frequent co-authors include S. J. Pearton, J.C. Zolper, C. YUAN, R. G. Wilson, C. B. Vartuli, J. S. Williams, Albert G. Baca, Hark Hoe Tan, Jin Zou and D. J. H. Cockayne. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Journal of Crystal Growth and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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