D. J. Rieger

1.2k total citations
45 papers, 864 citations indexed

About

D. J. Rieger is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D. J. Rieger has authored 45 papers receiving a total of 864 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 12 papers in Condensed Matter Physics. Recurrent topics in D. J. Rieger's work include Semiconductor materials and devices (27 papers), Semiconductor materials and interfaces (10 papers) and GaN-based semiconductor devices and materials (10 papers). D. J. Rieger is often cited by papers focused on Semiconductor materials and devices (27 papers), Semiconductor materials and interfaces (10 papers) and GaN-based semiconductor devices and materials (10 papers). D. J. Rieger collaborates with scholars based in United States, Germany and Australia. D. J. Rieger's co-authors include R. J. Shul, S. J. Pearton, G McClellan, C. Barratt, C. Constantine, J.C. Zolper, Albert G. Baca, Cao Vinh Tran, R. F. Karlicek and M. Schurman and has published in prestigious journals such as Physical Review Letters, Nature Communications and Nature Materials.

In The Last Decade

D. J. Rieger

44 papers receiving 834 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. J. Rieger United States 15 538 433 346 164 153 45 864
Jean-Claude Villégier France 14 198 0.4× 503 1.2× 348 1.0× 162 1.0× 51 0.3× 58 733
Konstantinos Pantzas France 18 523 1.0× 367 0.8× 412 1.2× 227 1.4× 115 0.8× 71 926
V. A. Kochelap Ukraine 17 581 1.1× 274 0.6× 636 1.8× 119 0.7× 39 0.3× 117 932
J.C. Villégier France 14 189 0.4× 559 1.3× 342 1.0× 126 0.8× 71 0.5× 60 757
O. H. Hughes United Kingdom 21 935 1.7× 418 1.0× 1.5k 4.2× 233 1.4× 46 0.3× 84 1.7k
C.D.W. Wilkinson United Kingdom 20 736 1.4× 285 0.7× 1.0k 2.9× 188 1.1× 48 0.3× 95 1.3k
Lina Chang China 8 361 0.7× 200 0.5× 479 1.4× 156 1.0× 23 0.2× 18 778
J. H. Greiner United States 13 403 0.7× 305 0.7× 410 1.2× 108 0.7× 29 0.2× 19 667
Holger Bartolf Switzerland 11 263 0.5× 200 0.5× 221 0.6× 78 0.5× 36 0.2× 34 505
Gin-ichiro Oya Japan 13 188 0.3× 458 1.1× 258 0.7× 145 0.9× 133 0.9× 66 676

Countries citing papers authored by D. J. Rieger

Since Specialization
Citations

This map shows the geographic impact of D. J. Rieger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. Rieger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. Rieger more than expected).

Fields of papers citing papers by D. J. Rieger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. Rieger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. Rieger. The network helps show where D. J. Rieger may publish in the future.

Co-authorship network of co-authors of D. J. Rieger

This figure shows the co-authorship network connecting the top 25 collaborators of D. J. Rieger. A scholar is included among the top collaborators of D. J. Rieger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. J. Rieger. D. J. Rieger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rieger, D. J., et al.. (2025). Spin environment of a superconducting qubit in high magnetic fields. Nature Communications. 16(1). 9564–9564.
2.
Rieger, D. J., Martin Spiecker, Grigore A. Timco, et al.. (2025). Kinetic inductance coupling for circuit QED with spins. Physical review. B.. 112(11). 1 indexed citations
3.
Rieger, D. J., et al.. (2024). Granular Aluminum Parametric Amplifier for Low-Noise Measurements in Tesla Fields. Physical Review Letters. 133(26). 260604–260604. 4 indexed citations
4.
Winkel, Patrick, Martin Spiecker, D. J. Rieger, et al.. (2024). Pure kinetic inductance coupling for cQED with flux qubits. Applied Physics Letters. 125(6). 3 indexed citations
5.
Rieger, D. J., et al.. (2023). Fano Interference in Microwave Resonator Measurements. Physical Review Applied. 20(1). 20 indexed citations
6.
Spiecker, Martin, Shlomi Matityahu, D. J. Rieger, et al.. (2023). Two-level system hyperpolarization using a quantum Szilard engine. Nature Physics. 19(9). 1320–1325. 28 indexed citations
7.
Valenti, Francesco, Martin Spiecker, D. J. Rieger, et al.. (2022). Operating in a deep underground facility improves the locking of gradiometric fluxonium qubits at the sweet spots. Applied Physics Letters. 120(5). 14 indexed citations
8.
Rieger, D. J., Martin Spiecker, Patrick Winkel, et al.. (2022). Granular aluminium nanojunction fluxonium qubit. Nature Materials. 22(2). 194–199. 26 indexed citations
9.
Rieger, D. J., Patrick Winkel, Francesco Valenti, et al.. (2020). Superconducting granular aluminum resonators resilient to magnetic fields up to 1 Tesla. Applied Physics Letters. 117(12). 32 indexed citations
10.
Cao, X. A., S. J. Pearton, R. K. Singh, et al.. (1999). Activation Characteristics of Donor and Acceptor Implants in GaN. MRS Proceedings. 572. 1 indexed citations
11.
Wilson, R. G., J. M. Zavada, X. A. Cao, et al.. (1999). Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 1226–1229. 13 indexed citations
12.
Shul, R. J., Albert G. Baca, D. J. Rieger, et al.. (1996). Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2. MRS Proceedings. 421. 10 indexed citations
13.
Shul, R. J., M.E. Sherwin, Albert G. Baca, & D. J. Rieger. (1996). Etching of sub-0.5 µm W/WSi x bilayer gates. Electronics Letters. 32(1). 70–71. 10 indexed citations
14.
Zolper, J.C., D. J. Rieger, Albert G. Baca, et al.. (1996). Sputtered AlN encapsulant for high-temperature annealing of GaN. Applied Physics Letters. 69(4). 538–540. 76 indexed citations
15.
Shul, R. J., G McClellan, S.A. Casalnuovo, et al.. (1996). Inductively coupled plasma etching of GaN. Applied Physics Letters. 69(8). 1119–1121. 178 indexed citations
16.
Choquette, Kent D., R. J. Shul, A. J. Howard, et al.. (1995). Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(1). 40–42. 8 indexed citations
17.
Howard, A. J., R. R. Rye, Antonio J. Ricco, et al.. (1994). New Methods for Circuit Fabrication on Poly(tetrafluoroethylene) Substrates. Journal of The Electrochemical Society. 141(12). 3556–3561. 5 indexed citations
18.
Baca, Albert G., J.C. Zolper, M.E. Sherwin, et al.. (1994). Complementary GaAs junction-gated heterostructure field effect transistor technology. 7. 59–62. 7 indexed citations
19.
Zolper, J.C., Albert G. Baca, R. J. Shul, et al.. (1994). An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p/sup +/-GaAs ohmic gate contact. IEEE Transactions on Electron Devices. 41(7). 1078–1082. 8 indexed citations
20.
Sherwin, M.E., J.C. Zolper, Albert G. Baca, et al.. (1994). An all implanted self-aligned enhancement mode n-JFET with Zn gates for GaAs digital applications. IEEE Electron Device Letters. 15(7). 242–244. 8 indexed citations

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