Youssef El Gmili

922 total citations
36 papers, 803 citations indexed

About

Youssef El Gmili is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Youssef El Gmili has authored 36 papers receiving a total of 803 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 17 papers in Electronic, Optical and Magnetic Materials and 17 papers in Materials Chemistry. Recurrent topics in Youssef El Gmili's work include GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (17 papers) and ZnO doping and properties (12 papers). Youssef El Gmili is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), Ga2O3 and related materials (17 papers) and ZnO doping and properties (12 papers). Youssef El Gmili collaborates with scholars based in France, United States and Tunisia. Youssef El Gmili's co-authors include Jean‐Paul Salvestrini, Suresh Sundaram, Paul L. Voss, A. Ougazzaden, G. Patriarche, Taha Ayari, T. Moudakir, Jérémy Streque, G. Orsal and Konstantinos Pantzas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

Youssef El Gmili

36 papers receiving 791 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Youssef El Gmili France 16 556 467 288 252 164 36 803
Johannes Ledig Germany 15 459 0.8× 467 1.0× 279 1.0× 201 0.8× 157 1.0× 33 711
Sönke Fündling Germany 13 510 0.9× 414 0.9× 329 1.1× 183 0.7× 198 1.2× 31 686
Е. А. Кожухова Russia 17 369 0.7× 485 1.0× 365 1.3× 472 1.9× 110 0.7× 48 820
A. S. Usikov Russia 13 638 1.1× 290 0.6× 359 1.2× 319 1.3× 131 0.8× 45 737
Benjamin Neuschl Germany 16 612 1.1× 308 0.7× 355 1.2× 290 1.2× 207 1.3× 37 752
Kwan Soo Chung South Korea 9 386 0.7× 424 0.9× 265 0.9× 253 1.0× 227 1.4× 23 683
Hwa-Mok Kim South Korea 9 573 1.0× 535 1.1× 359 1.2× 205 0.8× 267 1.6× 16 779
H.‐H. Wehmann Germany 16 299 0.5× 369 0.8× 232 0.8× 305 1.2× 129 0.8× 44 653
Ziguang Ma China 13 506 0.9× 436 0.9× 275 1.0× 387 1.5× 186 1.1× 59 833

Countries citing papers authored by Youssef El Gmili

Since Specialization
Citations

This map shows the geographic impact of Youssef El Gmili's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Youssef El Gmili with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Youssef El Gmili more than expected).

Fields of papers citing papers by Youssef El Gmili

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Youssef El Gmili. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Youssef El Gmili. The network helps show where Youssef El Gmili may publish in the future.

Co-authorship network of co-authors of Youssef El Gmili

This figure shows the co-authorship network connecting the top 25 collaborators of Youssef El Gmili. A scholar is included among the top collaborators of Youssef El Gmili based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Youssef El Gmili. Youssef El Gmili is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gmili, Youssef El, et al.. (2017). Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature. Vacuum. 138. 8–14. 9 indexed citations
2.
Gmili, Youssef El, Suresh Sundaram, Xiaojian Li, et al.. (2017). Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates. Optical Materials Express. 7(2). 376–376. 4 indexed citations
3.
Sundaram, Suresh, Xin Li, Youssef El Gmili, et al.. (2017). Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission. physica status solidi (a). 214(8). 1600868–1600868. 5 indexed citations
4.
Rogers, David J., Youssef El Gmili, Suresh Sundaram, et al.. (2017). Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology. 28(19). 195304–195304. 1 indexed citations
5.
Halfaya, Yacine, A. Soltani, Suresh Sundaram, et al.. (2016). Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT. IEEE Sensors Journal. 16(18). 6828–6838. 42 indexed citations
6.
Patriarche, G., Suresh Sundaram, Youssef El Gmili, et al.. (2016). Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask. Applied Physics Letters. 108(10). 20 indexed citations
7.
Li, Xin, Suresh Sundaram, Youssef El Gmili, et al.. (2016). Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy. Crystal Growth & Design. 16(6). 3409–3415. 119 indexed citations
8.
Arif, Muhammad, Jean‐Paul Salvestrini, Jérémy Streque, et al.. (2016). Role of V-pits in the performance improvement of InGaN solar cells. Applied Physics Letters. 109(13). 9 indexed citations
9.
Sundaram, Suresh, Youssef El Gmili, Cédric Pradalier, et al.. (2016). Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates. Nanotechnology. 27(11). 115602–115602. 2 indexed citations
10.
Li, Xiangyang, Suresh Sundaram, P. Disseix, et al.. (2015). AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express. 5(2). 380–380. 28 indexed citations
11.
Arif, Muhammad, Suresh Sundaram, Jérémy Streque, et al.. (2015). Investigation of new approaches for InGaN growth with high indium content for CPV application. AIP conference proceedings. 1679. 40001–40001. 1 indexed citations
12.
Gmili, Youssef El, et al.. (2015). Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree. Journal of Crystal Growth. 434. 72–76. 13 indexed citations
13.
Fourati, Najla, Chouki Zerrouki, Youssef El Gmili, et al.. (2015). Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1). Superlattices and Microstructures. 86. 472–482. 9 indexed citations
14.
Sundaram, Suresh, Youssef El Gmili, Jérémy Streque, et al.. (2015). High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices. physica status solidi (a). 212(4). 740–744. 7 indexed citations
15.
Salvestrini, Jean‐Paul, Yacine Halfaya, Suresh Sundaram, et al.. (2015). Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors. Applied Physics Letters. 106(24). 32 indexed citations
16.
Sundaram, Suresh, Youssef El Gmili, F. Genty, et al.. (2015). BAlN thin layers for deep UV applications. physica status solidi (a). 212(4). 745–750. 30 indexed citations
17.
Arif, Muhammad, Jérémy Streque, Anthony Martinez, et al.. (2015). Model of Ni-63 battery with realistic PIN structure. Journal of Applied Physics. 118(10). 28 indexed citations
18.
Sundaram, Suresh, Youssef El Gmili, Xiaojian Li, et al.. (2015). Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates. Applied Physics Letters. 107(11). 15 indexed citations
19.
Orsal, G., Youssef El Gmili, Nicolas Fressengeas, et al.. (2014). Bandgap energy bowing parameter of strained and relaxed InGaN layers. Optical Materials Express. 4(5). 1030–1030. 84 indexed citations
20.
Gautier, S., Youssef El Gmili, T. Moudakir, et al.. (2013). Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction. Thin Solid Films. 541. 46–50. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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