C. Roder

715 citations

25 papers · 580 indexed · h-index 11

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 21
Mechanics of Materials 11
- Metal and Thin Film Mechanics 11

Co-authors: D. Hommel (16 shared papers)S. Figge (8 shared papers)S. Einfeldt (9 shared papers)Jonas Lähnemann (5 shared papers)A. Trampert (4 shared papers)A. Waag (2 shared papers)O. Brandt (4 shared papers)N. Linder (2 shared papers)
Journals: physica status solidi (b) (4 papers)Physical Review B (3 papers)Journal of Applied Physics (2 papers)physica status solidi (a) (2 papers)Applied Surface Science (1 paper)
Partner nations: Germany United States Sweden

In The Last Decade

C. Roder

25 papers receiving 564 citations

Peers

Countries citing papers authored by C. Roder

Since Specialization

Citations

This map shows the geographic impact of C. Roder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Roder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Roder more than expected).

Fields of papers citing papers by C. Roder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Roder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Roder. The network helps show where C. Roder may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Roder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Roder Line = papers co-authored together C. Roder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 25 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells Nanotechnology ·Werner Bergbauer, Martin Straßburg, Ch. Kölper, N. Linder, C. Roder, Jonas Lähnemann, A. Trampert, Sönke Fündling, Shiu Fai Li, H-H Wehmann, A. Waag	2010	130
2	Temperature dependence of the thermal expansion of GaN Physical Review B ·C. Roder, S. Einfeldt, S. Figge, D. Hommel	2005	106
3	Direct experimental determination of the spontaneous polarization of GaN Physical Review B ·Jonas Lähnemann, O. Brandt, U. Jahn, Carsten Pfüller, C. Roder, P. Dogan, Frank Große, Abderrezak Belabbes, F. Bechstedt, A. Trampert, Lutz Geelhaar	2012	95
4	Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates Journal of Applied Physics ·C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, T. Paskova, B. Monemar, U. Behn, B. A. Haskell, P. Fini, Shuji Nakamura	2006	60
5	N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties Journal of Crystal Growth ·Werner Bergbauer, Martin Straßburg, Ch. Kölper, N. Linder, C. Roder, Jonas Lähnemann, A. Trampert, Sönke Fündling, S.F. Li, H.-H. Wehmann, A. Waag	2010	42
6	Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy Crystal Growth & Design ·P. Dogan, O. Brandt, Carsten Pfüller, Jonas Lähnemann, U. Jahn, C. Roder, A. Trampert, Lutz Geelhaar, Henning Riechert	2011	25
7	Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending Journal of Electronic Materials ·T. Paskova, Vanya Darakchieva, E. Valcheva, Ivan G. Ivanov, B. Ḿonemar, T. Böttcher, C. Roder, D. Hommel	2004	20
8	Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy Journal of Applied Physics ·Rozaliya Barabash, C. Roder, G. Е. Ice, S. Einfeldt, J. D. Budai, O. M. Barabash, S. Figge, D. Hommel	2006	17
9	The analysis of factors limiting the maximum output power of broad-area laser diodes Optical and Quantum Electronics ·H. Wenzel, P. Crump, Agnieszka Pietrzak, C. Roder, X. Wang, G. Erbert	2009	15
10	Epitaxial Interfaces between Crystallographically Mismatched Materials Physical Review Letters ·Steven C. Erwin, Cunxu Gao, C. Roder, Jonas Lähnemann, O. Brandt	2011	14
11	GaN/Fe core/shell nanowires for nonvolatile spintronics on Si Physical Review B ·Cunxu Gao, Rouin Farshchi, C. Roder, P. Dogan, O. Brandt	2011	10
12	Optical characterization of InxGa1−xN alloys Applied Surface Science ·M. Gärtner, C. Kruse, M. Modreanu, A. Tausendfreund, C. Roder, D. Hommel	2006	8
13	Limitations to peak continuous wave power in high power broad area single emitter 980 nm diode lasers P. Crump, C. Roder, R. Staske, Agnieszka Pietrzak, W. Pittroff, A. Ginolas, J. Robert Fricke, Katrin Paschke, F. Bugge, P. Ressel, H. Wenzel, G. Erbert	2009	6
14	Crystallographic wing tilt in laterally overgrown GaN Journal of Physics D Applied Physics ·C. Roder, H. Heinke, D. Hommel, Thomas Katona, James S. Speck, Steven P. DenBaars	2003	6
15	Characterization of growth defects in thin GaN layers with X‐ray microbeam physica status solidi (b) ·Rozaliya Barabash, G. Е. Ice, C. Roder, J. D. Budai, W. Liu, S. Figge, S. Einfeldt, D. Hommel, R. F. Davis	2007	6
16	Relaxation in crack‐free AlN/GaN superlattices physica status solidi (b) ·Roland Kröger, C. Kruse, C. Roder, D. Hommel, Andreas Rosenauer	2006	4
17	On the dynamics of InGaN dot formation by RF-MBE growth MRS Proceedings ·Tomohiro Yamaguchi, S. Einfeldt, S. Figge, C. Kruse, C. Roder, D. Hommel	2004	4
18	Interplay of the Trion Singlet and Triplet State Transitions in Magnetooptical and Time-Resolved Investigation of ZnSe/Zn(S,Se) Single Quantum Wells physica status solidi (b) ·J. Gutowski, K. Sebald, C. Roder, Peter Michler, M. Klude, H. Wenisch, D. Hommel	2002	2
19	Curvature and strain in thick HVPE-GaN for quasi-substrate applications MRS Proceedings ·C. Roder, T. Böttcher, Tanya Paskova, Bo Monemar, D. Hommel	2003	2
20	High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress MRS Proceedings ·T. Paskova, T. Suski, Michał Boćkowski, T. Paskova, Vanya Darakchieva, B. Monemar, Filip Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel	2004	2

About C. Roder

C. Roder is a scholar working on Condensed Matter Physics, Mechanics of Materials, Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 25 papers that have together received 580 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (21 papers), Metal and Thin Film Mechanics (11 papers), ZnO doping and properties (9 papers), Ga2O3 and related materials (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Semiconductor materials and devices (3 papers), Acoustic Wave Resonator Technologies (2 papers) and Semiconductor Lasers and Optical Devices (2 papers). The work is most often cited by research in Condensed Matter Physics (472 citations), Electronic, Optical and Magnetic Materials (264 citations), Materials Chemistry (344 citations), Mechanics of Materials (117 citations) and Atomic and Molecular Physics, and Optics (129 citations). C. Roder has collaborated with scholars based in Germany, United States and Sweden. Frequent co-authors include D. Hommel, S. Figge, S. Einfeldt, Jonas Lähnemann, A. Trampert, A. Waag, O. Brandt, N. Linder, Sönke Fündling and Werner Bergbauer. Their work appears in journals such as physica status solidi (b), Physical Review B, Journal of Applied Physics, physica status solidi (a) and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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