Tanya Paskova

766 citations

25 papers · 640 indexed · h-index 14

Co-authors: K. R. Evans Drew Hanser Edward A. Preble Mingwei Zhu Christian Wetzel Theeradetch Detchprohm Shi You Yufeng Li
Topics: GaN-based semiconductor devices and materials (25 papers)ZnO doping and properties (15 papers)Ga2O3 and related materials (12 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Physical Review B
Partner nations: United States Sweden Czechia

In The Last Decade

Tanya Paskova

23 papers receiving 613 citations

Peers

Countries citing papers authored by Tanya Paskova

Since Specialization

Citations

This map shows the geographic impact of Tanya Paskova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tanya Paskova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tanya Paskova more than expected).

Fields of papers citing papers by Tanya Paskova

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tanya Paskova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tanya Paskova. The network helps show where Tanya Paskova may publish in the future.

Co-authorship network of co-authors of Tanya Paskova

This figure shows the co-authorship network connecting the top 25 collaborators of Tanya Paskova. A scholar is included among the top collaborators of Tanya Paskova based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tanya Paskova. Tanya Paskova is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates 2013 ·Journal of Crystal Growth ·Fang Liu,Li Huang,(unknown),Yoosuf N. Picard,Edward A. Preble,Tanya Paskova,K. R. Evans,R. F. Davis,Lisa M. Porter	11
2	High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates 2013 ·IEEE Electron Device Letters ·David J. Meyer,David A. Deen,David F. Storm,Mario G. Ancona,D. S. Katzer,Robert B. Bass,J.A. Roussos,Brian P. Downey,Steven C. Binari,Theodosia Gougousi,Tanya Paskova,Edward A. Preble,K. R. Evans	47
3	Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction 2012 ·Applied Physics Letters ·(unknown),Theeradetch Detchprohm,Liang Zhao,Tanya Paskova,Edward A. Preble,Christian Wetzel	0
4	Radial space-charge-limited electron flow in semi-insulating GaN:Fe 2011 ·Journal of Applied Physics ·Jiřı́ J. Mareš,Pavel Hubı́k,J. Krištofik,(unknown),(unknown),Tanya Paskova,K. R. Evans	0
5	Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on bulk GaN substrates 2011 ·physica status solidi (a) ·Bo Monemar,T. Paskova,Г. Позина,Carl Hemmingsson,Peder Bergman,David Lindgren,Lars Samuelson,Xianfeng Ni,H. Morkoç̌,Tanya Paskova,Zhaoxia Bi,B. Jonas Ohlsson	7
6	Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates 2011 ·Journal of Crystal Growth ·Guangyu Liu,Jing Zhang,Xiaohang Li,G. S. Huang,Tanya Paskova,K. R. Evans,Hongping Zhao,Nelson Tansu	50
7	Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Bo Monemar,T. Paskova,Г. Позина,Carl Hemmingsson,Peder Bergman,David Lindgren,Lars Samuelson,Xianfeng Ni,H. Morkoç,Tanya Paskova,Zhaoxia Bi,B. Jonas Ohlsson	2
8	Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yaqi Wang,Hui Xu,(unknown),Yogesh Sharma,(unknown),P. Gartland,Tamara Isaacs‐Smith,Claude Ahyi,John R. Williams,Minseo Park,(unknown),Mark A. Johnson,Andrew A. Allerman,A. Hanser,Tanya Paskova,Edward A. Preble,K. R. Evans	12
9	Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN 2010 ·Applied Physics Express ·Shi You,Theeradetch Detchprohm,Mingwei Zhu,Wenting Hou,Edward A. Preble,Drew Hanser,Tanya Paskova,Christian Wetzel	28
10	Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes 2010 ·physica status solidi (a) ·Mingwei Zhu,Shi You,Theeradetch Detchprohm,Tanya Paskova,Edward A. Preble,Christian Wetzel	21
11	Effect of Fe doping on the terahertz conductivity of GaN single crystals 2010 ·Journal of Physics D Applied Physics ·F. Kadlec,Christelle Kadlec,Tanya Paskova,K. R. Evans	6
12	Cyan and green light emitting diode on non‐polar m ‐plane GaN bulk substrate 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Theeradetch Detchprohm,Mingwei Zhu,Shi You,Yufeng Li,Liang Zhao,Edward A. Preble,Tanya Paskova,Drew Hanser,Christian Wetzel	4
13	In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation 2010 ·Journal of Electronic Materials ·Hui Xu,(unknown),Yaqi Wang,An-Jen Cheng,(unknown),(unknown),Minseo Park,Claude Ahyi,John R. Williams,(unknown),A. Hanser,Tanya Paskova,Edward A. Preble,K. R. Evans,Yi Zhou	16
14	Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes 2010 ·Physical Review B ·Mingwei Zhu,Shi You,Theeradetch Detchprohm,Tanya Paskova,Edward A. Preble,Drew Hanser,Christian Wetzel	29
15	Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate 2010 ·Semiconductor Science and Technology ·Yaqi Wang,(unknown),Yogesh Sharma,(unknown),(unknown),P. Gartland,Tamara Isaacs‐Smith,Claude Ahyi,John R. Williams,Minseo Park,Mark A. Johnson,Tanya Paskova,Edward A. Preble,K. R. Evans	41
16	GaN Substrates for III-Nitride Devices 2009 ·Proceedings of the IEEE ·Tanya Paskova,Drew Hanser,K. R. Evans	120
17	Nitrides with nonpolar surfaces : growth, properties, and devices 2008 ·Wiley-VCH eBooks ·Tanya Paskova	16
18	Green light emitting diodes on a-plane GaN bulk substrates 2008 ·Applied Physics Letters ·Theeradetch Detchprohm,Mingwei Zhu,Yufeng Li,Yong Xia,Christian Wetzel,Edward A. Preble,Lianghong Liu,Tanya Paskova,Drew Hanser	60
19	Development and prospects of nitride materials and devices with nonpolar surfaces 2008 ·physica status solidi (b) ·Tanya Paskova	82
20	Curvature and strain in thick HVPE-GaN for quasi-substrate applications 2003 ·MRS Proceedings ·C. Roder,T. Böttcher,Tanya Paskova,Bo Monemar,D. Hommel	2

About Tanya Paskova

Tanya Paskova is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 25 papers that have together received 640 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), ZnO doping and properties (15 papers) and Ga2O3 and related materials (12 papers). The work is most often cited by research in Condensed Matter Physics (580 citations), Electronic, Optical and Magnetic Materials (278 citations) and Materials Chemistry (284 citations). Tanya Paskova has collaborated with scholars based in United States, Sweden and Czechia. Frequent co-authors include K. R. Evans, Drew Hanser, Edward A. Preble, Mingwei Zhu, Christian Wetzel, Theeradetch Detchprohm, Shi You, Yufeng Li, Yong Xia and Lianghong Liu. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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