Tanya Paskova

766 total citations
25 papers, 640 citations indexed

About

Tanya Paskova is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tanya Paskova has authored 25 papers receiving a total of 640 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 15 papers in Materials Chemistry and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tanya Paskova's work include GaN-based semiconductor devices and materials (25 papers), ZnO doping and properties (15 papers) and Ga2O3 and related materials (12 papers). Tanya Paskova is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), ZnO doping and properties (15 papers) and Ga2O3 and related materials (12 papers). Tanya Paskova collaborates with scholars based in United States, Sweden and Czechia. Tanya Paskova's co-authors include K. R. Evans, Drew Hanser, Edward A. Preble, Mingwei Zhu, Christian Wetzel, Theeradetch Detchprohm, Shi You, Yufeng Li, Lianghong Liu and Yong Xia and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Tanya Paskova

23 papers receiving 613 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tanya Paskova United States 14 580 284 278 225 189 25 640
J. I. Hwang Japan 12 514 0.9× 398 1.4× 327 1.2× 188 0.8× 221 1.2× 23 686
Benjamin Neuschl Germany 16 612 1.1× 308 1.1× 355 1.3× 290 1.3× 169 0.9× 37 752
A. Adikimenakis Greece 17 631 1.1× 277 1.0× 341 1.2× 242 1.1× 165 0.9× 44 720
T. Moudakir France 16 525 0.9× 283 1.0× 302 1.1× 194 0.9× 129 0.7× 34 633
Masanobu Hiroki Japan 14 579 1.0× 226 0.8× 316 1.1× 326 1.4× 117 0.6× 53 651
Youssef El Gmili France 16 556 1.0× 467 1.6× 288 1.0× 252 1.1× 121 0.6× 36 803
B. Schineller Germany 14 497 0.9× 252 0.9× 233 0.8× 307 1.4× 279 1.5× 72 640
M. Némoz France 14 513 0.9× 274 1.0× 292 1.1× 224 1.0× 150 0.8× 46 651
Brendan Gunning United States 17 569 1.0× 215 0.8× 245 0.9× 366 1.6× 197 1.0× 47 684
C. Giesen Germany 14 436 0.8× 228 0.8× 212 0.8× 251 1.1× 149 0.8× 34 557

Countries citing papers authored by Tanya Paskova

Since Specialization
Citations

This map shows the geographic impact of Tanya Paskova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tanya Paskova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tanya Paskova more than expected).

Fields of papers citing papers by Tanya Paskova

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tanya Paskova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tanya Paskova. The network helps show where Tanya Paskova may publish in the future.

Co-authorship network of co-authors of Tanya Paskova

This figure shows the co-authorship network connecting the top 25 collaborators of Tanya Paskova. A scholar is included among the top collaborators of Tanya Paskova based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tanya Paskova. Tanya Paskova is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Meyer, David J., David A. Deen, David F. Storm, et al.. (2013). High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates. IEEE Electron Device Letters. 34(2). 199–201. 47 indexed citations
2.
Liu, Fang, Li Huang, Yoosuf N. Picard, et al.. (2013). Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates. Journal of Crystal Growth. 387. 16–22. 11 indexed citations
3.
Detchprohm, Theeradetch, et al.. (2012). Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction. Applied Physics Letters. 101(23).
4.
Storm, David F., David J. Meyer, D. S. Katzer, et al.. (2012). Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(2). 15 indexed citations
5.
Mareš, Jiřı́ J., et al.. (2011). Radial space-charge-limited electron flow in semi-insulating GaN:Fe. Journal of Applied Physics. 110(1).
6.
Monemar, Bo, T. Paskova, Г. Позина, et al.. (2011). Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on bulk GaN substrates. physica status solidi (a). 208(7). 1532–1534. 7 indexed citations
7.
Liu, Guangyu, Jing Zhang, Xiaohang Li, et al.. (2011). Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. Journal of Crystal Growth. 340(1). 66–73. 50 indexed citations
8.
Monemar, Bo, T. Paskova, Г. Позина, et al.. (2011). Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7939. 793907–793907. 2 indexed citations
9.
Wang, Yaqi, Hui Xu, Yogesh Sharma, et al.. (2011). Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2430–2432. 12 indexed citations
10.
You, Shi, Theeradetch Detchprohm, Mingwei Zhu, et al.. (2010). Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN. Applied Physics Express. 3(10). 102103–102103. 28 indexed citations
11.
Zhu, Mingwei, Shi You, Theeradetch Detchprohm, et al.. (2010). Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes. physica status solidi (a). 207(6). 1305–1308. 21 indexed citations
12.
Xu, Hui, Yaqi Wang, An-Jen Cheng, et al.. (2010). In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation. Journal of Electronic Materials. 39(10). 2237–2242. 16 indexed citations
13.
Zhu, Mingwei, Shi You, Theeradetch Detchprohm, et al.. (2010). Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes. Physical Review B. 81(12). 29 indexed citations
14.
Detchprohm, Theeradetch, Mingwei Zhu, Shi You, et al.. (2010). Cyan and green light emitting diode on non‐polar m ‐plane GaN bulk substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2190–2192. 4 indexed citations
15.
Kadlec, F., Christelle Kadlec, Tanya Paskova, & K. R. Evans. (2010). Effect of Fe doping on the terahertz conductivity of GaN single crystals. Journal of Physics D Applied Physics. 43(14). 145401–145401. 6 indexed citations
16.
Wang, Yaqi, Yogesh Sharma, P. Gartland, et al.. (2010). Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate. Semiconductor Science and Technology. 26(2). 22002–22002. 41 indexed citations
17.
Paskova, Tanya, Drew Hanser, & K. R. Evans. (2009). GaN Substrates for III-Nitride Devices. Proceedings of the IEEE. 98(7). 1324–1338. 120 indexed citations
18.
Paskova, Tanya. (2008). Nitrides with nonpolar surfaces : growth, properties, and devices. Wiley-VCH eBooks. 16 indexed citations
19.
Detchprohm, Theeradetch, Mingwei Zhu, Yufeng Li, et al.. (2008). Green light emitting diodes on a-plane GaN bulk substrates. Applied Physics Letters. 92(24). 60 indexed citations
20.
Roder, C., T. Böttcher, Tanya Paskova, Bo Monemar, & D. Hommel. (2003). Curvature and strain in thick HVPE-GaN for quasi-substrate applications. MRS Proceedings. 798. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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