Phuong Vuong

493 total citations
25 papers, 198 citations indexed

About

Phuong Vuong is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Phuong Vuong has authored 25 papers receiving a total of 198 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 12 papers in Electronic, Optical and Magnetic Materials and 11 papers in Materials Chemistry. Recurrent topics in Phuong Vuong's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (12 papers) and Metal and Thin Film Mechanics (8 papers). Phuong Vuong is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (12 papers) and Metal and Thin Film Mechanics (8 papers). Phuong Vuong collaborates with scholars based in France, United States and Saudi Arabia. Phuong Vuong's co-authors include Suresh Sundaram, Jean‐Paul Salvestrini, A. Ougazzaden, Paul L. Voss, S. Gautier, G. Patriarche, Yacine Halfaya, Taha Ayari, Ali Ahaitouf and Fouad Benkhelifa and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Scientific Reports.

In The Last Decade

Phuong Vuong

24 papers receiving 197 citations

Peers

Phuong Vuong

CMP

EOMM

EEE

Seung-Jae Lee South Korea

Hyunjea Lee United States

Zhe Cheng China

J. M. Liu China

Yumin Zhang China

M. Al‐Suleiman Germany

Andrea Pinos Sweden

Kongyi Li China

Nguyen M. Vu United States

Yukio Kashima Japan

Seung-Jae Lee South Korea

Phuong Vuong

109 ×0.9

176 ×1.6

CMP

103 ×1.5

EOMM

67 ×1.1

EEE

36 ×0.9

Citations per year, relative to Phuong Vuong Phuong Vuong (= 1×) peers Seung-Jae Lee

Countries citing papers authored by Phuong Vuong

Since Specialization

Citations

This map shows the geographic impact of Phuong Vuong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Phuong Vuong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Phuong Vuong more than expected).

Fields of papers citing papers by Phuong Vuong

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Phuong Vuong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Phuong Vuong. The network helps show where Phuong Vuong may publish in the future.

Co-authorship network of co-authors of Phuong Vuong

This figure shows the co-authorship network connecting the top 25 collaborators of Phuong Vuong. A scholar is included among the top collaborators of Phuong Vuong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Phuong Vuong. Phuong Vuong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bourrier, David, Cédric Ayela, Fabrice Mathieu, et al.. (2025). III-Nitride MEMS drum resonators on flexible metal substrates. Microsystems & Nanoengineering. 11(1). 197–197.

Vuong, Phuong, et al.. (2025). Layer transferred UV emitting hBN/AlGaN heterostructures. Applied Physics Letters. 126(10). 1 indexed citations

Ali, Imran, Mohamed Bouzidi, Maryam Al Huwayz, et al.. (2024). Structural and optical characterizations of cubic GaN layers grown by MOVPE on GaAs(114) substrate. Optical Materials. 154. 115644–115644. 1 indexed citations

Vuong, Phuong, G. Patriarche, Paul L. Voss, et al.. (2024). Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer. SHILAP Revista de lepidopterología. 6(2). 2 indexed citations

Vuong, Phuong, et al.. (2024). Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination. Small. 20(52). e2406794–e2406794. 1 indexed citations

Tran, Tuan M., Phuong Vuong, T. Moudakir, et al.. (2024). Transferrable GaN-based Micro-LED heterostructures grown on h-BN for optogenetic applications. Journal of Crystal Growth. 650. 127979–127979. 2 indexed citations

Némoz, M., et al.. (2023). (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission. Nanomaterials. 13(17). 2404–2404. 1 indexed citations

Vuong, Phuong, et al.. (2023). Photoinduced doping in hexagonal boron nitride. Applied Physics Letters. 122(26). 5 indexed citations

Vuong, Phuong, et al.. (2023). Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination. 40. 42–42. 1 indexed citations

10.

Vuong, Phuong, G. Patriarche, S. Gautier, et al.. (2023). Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template. Advanced Materials Technologies. 8(15). 9 indexed citations

11.

Michon, Adrien, M. Némoz, Aimeric Courville, et al.. (2022). Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN. Materials. 15(23). 8602–8602. 7 indexed citations

12.

Cassabois, Guillaume, Adrien Rousseau, Christine Elias, et al.. (2021). Hexagonal boron nitride: optical properties in the deep ultraviolet. Comptes Rendus Physique. 22(S4). 69–76. 2 indexed citations

13.

Ahaitouf, Ali, Suresh Sundaram, Phuong Vuong, et al.. (2021). Natural Boron and ¹⁰B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors. ACS Omega. 7(1). 804–809. 13 indexed citations

14.

Sundaram, Suresh, Phuong Vuong, G. Patriarche, et al.. (2021). Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer. ACS Applied Electronic Materials. 3(6). 2614–2621. 13 indexed citations

15.

Sundaram, Suresh, Phuong Vuong, Taha Ayari, et al.. (2021). MOVPE of GaN-based mixed dimensional heterostructures on wafer-scale layered 2D hexagonal boron nitride—A key enabler of III-nitride flexible optoelectronics. APL Materials. 9(6). 14 indexed citations

16.

Vuong, Phuong, et al.. (2021). Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE. Materials Science in Semiconductor Processing. 132. 105909–105909. 8 indexed citations

17.

Sundaram, Suresh, Phuong Vuong, Yacine Halfaya, et al.. (2021). Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions. Nanomaterials. 11(1). 211–211. 22 indexed citations

18.

Vuong, Phuong, Suresh Sundaram, G. Patriarche, et al.. (2020). Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN. ACS Applied Materials & Interfaces. 12(49). 55460–55466. 21 indexed citations

19.

Sundaram, Suresh, Taha Ayari, Phuong Vuong, et al.. (2020). Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates. Scientific Reports. 10(1). 21709–21709. 14 indexed citations

20.

Ayari, Taha, Suresh Sundaram, Phuong Vuong, et al.. (2019). Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications. Advanced Materials Technologies. 4(10). 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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