Maria Tchernycheva

7.7k total citations
228 papers, 6.1k citations indexed

About

Maria Tchernycheva is a scholar working on Condensed Matter Physics, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Maria Tchernycheva has authored 228 papers receiving a total of 6.1k indexed citations (citations by other indexed papers that have themselves been cited), including 150 papers in Condensed Matter Physics, 103 papers in Biomedical Engineering and 99 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Maria Tchernycheva's work include GaN-based semiconductor devices and materials (150 papers), Semiconductor Quantum Structures and Devices (76 papers) and Nanowire Synthesis and Applications (71 papers). Maria Tchernycheva is often cited by papers focused on GaN-based semiconductor devices and materials (150 papers), Semiconductor Quantum Structures and Devices (76 papers) and Nanowire Synthesis and Applications (71 papers). Maria Tchernycheva collaborates with scholars based in France, Russia and Switzerland. Maria Tchernycheva's co-authors include F. H. Julien, Jean‐Christophe Harmand, Gwénolé Jacopin, E. Monroy, Lorenzo Rigutti, G. É. Cirlin, L. Nevou, F. Guillot, Laurent Travers and A. V. Babichev and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Applied Physics Letters.

In The Last Decade

Maria Tchernycheva

222 papers receiving 6.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Maria Tchernycheva France 45 3.5k 2.7k 2.6k 2.4k 2.3k 228 6.1k
E. Monroy France 46 6.4k 1.8× 3.8k 1.4× 2.6k 1.0× 3.3k 1.3× 3.3k 1.4× 347 9.3k
Nelson Tansu United States 48 5.0k 1.4× 2.8k 1.1× 1.7k 0.6× 3.6k 1.5× 3.2k 1.4× 224 7.5k
Catherine Bougerol France 37 2.6k 0.7× 2.0k 0.8× 1.5k 0.6× 1.4k 0.6× 1.2k 0.5× 201 4.2k
Daniel Koleske United States 40 3.7k 1.0× 3.1k 1.2× 1.2k 0.4× 2.1k 0.9× 2.7k 1.2× 142 6.0k
R. Kudrawiec Poland 38 2.3k 0.6× 2.8k 1.1× 781 0.3× 3.7k 1.5× 4.3k 1.9× 476 6.6k
P. Perlin Poland 38 5.5k 1.6× 2.5k 0.9× 1.2k 0.5× 3.2k 1.3× 2.8k 1.2× 339 6.8k
A. Trampert Germany 49 6.0k 1.7× 5.7k 2.2× 2.2k 0.9× 3.8k 1.6× 3.3k 1.4× 369 10.3k
Andrew A. Allerman United States 45 4.2k 1.2× 1.6k 0.6× 1.1k 0.4× 2.8k 1.2× 4.1k 1.8× 240 6.6k
F. Scholz Germany 45 5.0k 1.4× 3.1k 1.2× 1.2k 0.5× 4.5k 1.8× 3.9k 1.7× 471 8.4k
César Magén Spain 44 2.3k 0.7× 4.1k 1.6× 1.6k 0.6× 2.2k 0.9× 1.9k 0.8× 237 7.6k

Countries citing papers authored by Maria Tchernycheva

Since Specialization
Citations

This map shows the geographic impact of Maria Tchernycheva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maria Tchernycheva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maria Tchernycheva more than expected).

Fields of papers citing papers by Maria Tchernycheva

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maria Tchernycheva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maria Tchernycheva. The network helps show where Maria Tchernycheva may publish in the future.

Co-authorship network of co-authors of Maria Tchernycheva

This figure shows the co-authorship network connecting the top 25 collaborators of Maria Tchernycheva. A scholar is included among the top collaborators of Maria Tchernycheva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maria Tchernycheva. Maria Tchernycheva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gogneau, N., Anne Chevillard, Laurent Couraud, et al.. (2025). The surface charge effects: A route to the enhancement of the piezoelectric conversion efficiency in GaN nanowires. SPIRE - Sciences Po Institutional REpository. 9. 100082–100082. 1 indexed citations
2.
Euaruksakul, Chanan, et al.. (2023). Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy. Surfaces and Interfaces. 40. 103031–103031.
3.
Mastropasqua, Chiara, Adrien Michon, M. Némoz, et al.. (2023). InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC. Microelectronic Engineering. 275. 111995–111995. 1 indexed citations
4.
Coulon, Pierre‐Marie, Sébastien Chenot, Marc Portail, et al.. (2022). Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE. Crystal Growth & Design. 22(9). 5206–5214. 2 indexed citations
5.
Vézian, S., Magali Morales, P. Ruterana, et al.. (2022). Porous Nitride Light-Emitting Diodes. ACS Photonics. 9(4). 1256–1263. 4 indexed citations
6.
Damilano, B., S. Vézian, M. P. Chauvat, et al.. (2022). Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence. Journal of Applied Physics. 132(3).
7.
Tchernycheva, Maria, R. Ferreira, Enrico Di Russo, et al.. (2022). Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature. Physical review. B.. 105(19). 1 indexed citations
8.
Fedorov, Vladimir V., Yury Berdnikov, Alexey D. Bolshakov, et al.. (2021). Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates. Nanomaterials. 11(8). 1949–1949. 15 indexed citations
9.
Neplokh, Vladimir, Vladimir V. Fedorov, А М Можаров, et al.. (2021). Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes. Nanomaterials. 11(10). 2549–2549. 8 indexed citations
10.
Koval, Olga Yu., Vladimir V. Fedorov, Alexey D. Bolshakov, et al.. (2020). Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. Nanomaterials. 10(11). 2110–2110. 19 indexed citations
11.
Piazza, Valerio, A. V. Babichev, Lorenzo Mancini, et al.. (2019). Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques. Nanotechnology. 30(21). 214006–214006. 5 indexed citations
12.
Collin, Stéphane, G. Patriarche, Fabrice Oehler, et al.. (2019). Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires. Nanotechnology. 30(30). 304001–304001. 6 indexed citations
13.
Piazza, Valerio, Fabien Bayle, Andréa Cattoni, et al.. (2019). Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications. Nanotechnology. 31(14). 145708–145708. 11 indexed citations
14.
Babichev, A. V., et al.. (2018). Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation. Beilstein Journal of Nanotechnology. 9. 2248–2254. 1 indexed citations
15.
Morassi, Martina, Ludovic Largeau, Fabrice Oehler, et al.. (2018). Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design. 18(4). 2545–2554. 16 indexed citations
16.
Scaccabarozzi, Andrea, Pierre Râle, Fabrice Oehler, et al.. (2017). Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence. Nano Letters. 17(11). 6667–6675. 25 indexed citations
17.
Collin, Stéphane, Pierre Râle, Nicolas Chauvin, et al.. (2017). In situpassivation of GaAsP nanowires. Nanotechnology. 28(49). 495707–495707. 26 indexed citations
18.
Russo, Enrico Di, Lorenzo Mancini, Simona Moldovan, et al.. (2017). Three-dimensional atomic-scale investigation of ZnO-MgxZn1−xO m-plane heterostructures. Applied Physics Letters. 111(3). 20 indexed citations
19.
Arbiol, Jordi, César Magén, Pascal Becker, et al.. (2012). Self-assembled GaN quantum wires on GaN/AlN nanowire templates. Nanoscale. 4(23). 7517–7517. 41 indexed citations
20.
Doyennette, L., Alon Vardi, F. Guillot, et al.. (2006). Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots. physica status solidi (b). 243(15). 3993–3997. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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