Benjamin Neuschl
Impact in
- Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
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- Ga2O3 and related materials
Papers in
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- GaN-based semiconductor devices and materials 29
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- Ga2O3 and related materials 21
- Co-authors
- K. ThonkeMartin FenebergMatthias BickermannRobert A. R. LeuteRamón CollazoZlatko SitarJinqiao XieSeiji Mita
- Journals
- Applied Physics Letters (6 papers)Journal of Applied Physics (6 papers)Journal of Crystal Growth (4 papers)physica status solidi (b) (3 papers)Physical Review B (2 papers)
- Partner nations
- GermanyUnited StatesChina
In The Last Decade
Benjamin Neuschl
37 papers receiving 733 citations
Peers
Comparison fields: 5 of 30
- Condensed Matter Physics 612
- Electronic, Optical and Magnetic Materials 355
- Materials Chemistry 308
- Atomic and Molecular Physics, and Optics 169
- Electrical and Electronic Engineering 290
Countries citing papers authored by Benjamin Neuschl
This map shows the geographic impact of Benjamin Neuschl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Neuschl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Neuschl more than expected).
Fields of papers citing papers by Benjamin Neuschl
This network shows the impact of papers produced by Benjamin Neuschl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Neuschl. The network helps show where Benjamin Neuschl may publish in the future.
Co-authors
The 25 scholars most cited alongside Benjamin Neuschl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2016 | 5 | |
| 2 | 2016 | 11 | |
| 3 | 2015 | 4 | |
| 4 | 2014 | 5 | |
| 5 | 2014 | 23 | |
| 6 | 2014 | 20 | |
| 7 | 2014 | 4 | |
| 8 | 2013 | 65 | |
| 9 | 2013 | 35 | |
| 10 | 2012 | 23 | |
| 11 | 2012 | 34 | |
| 12 | 2011 | 102 | |
| 13 | 2011 | 11 | |
| 14 | 2011 | 7 | |
| 15 | 2011 | 14 | |
| 16 | 2010 | 7 | |
| 17 | 2010 | 2 | |
| 18 | 2010 | 9 | |
| 19 | 2010 | 7 | |
| 20 | 2010 | 13 |
About Benjamin Neuschl
Benjamin Neuschl is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Mechanics of Materials, having authored 37 papers that have together received 752 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (21 papers), ZnO doping and properties (17 papers), Semiconductor materials and devices (11 papers), Acoustic Wave Resonator Technologies (7 papers), Semiconductor Quantum Structures and Devices (7 papers), Metal and Thin Film Mechanics (6 papers) and Gas Sensing Nanomaterials and Sensors (4 papers). The work is most often cited by research in Condensed Matter Physics (612 citations), Electronic, Optical and Magnetic Materials (355 citations), Materials Chemistry (308 citations), Atomic and Molecular Physics, and Optics (169 citations) and Electrical and Electronic Engineering (290 citations). Benjamin Neuschl has collaborated with scholars based in Germany, United States and China. Frequent co-authors include K. Thonke, Martin Feneberg, Matthias Bickermann, Robert A. R. Leute, Ramón Collazo, Zlatko Sitar, Jinqiao Xie, Seiji Mita, R. Goldhahn and Rafael Dalmau. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, physica status solidi (b) and Physical Review B.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.