D. Bahnck

531 citations

21 papers · 423 indexed · h-index 10

Structural Biology top 5%
- Advanced Electron Microscopy Techniques and Applications 5
Surfaces, Coatings and Films top 10%
- Electron and X-Ray Spectroscopy Techniques 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 8
Electrical and Electronic Engineering
- Silicon and Solar Cell Technologies 5
- Semiconductor materials and devices 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Ceramics and Composites
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 4
Computational Mechanics
- Ion-surface interactions and analysis 2

Co-authors: R. Hull J. C. Bean L. J. Peticolas F. A. Stevie F. C. Unterwald K. T. Short H. J. Guggenheim L. F. Johnson
Cited by: Structural Biology Surfaces, Coatings and Films Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (6 papers)Journal of Crystal Growth (1 paper)Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (1 paper)
Partner nations: United States United Kingdom Germany

In The Last Decade

D. Bahnck

21 papers receiving 396 citations

Peers

Countries citing papers authored by D. Bahnck

Since Specialization

Citations

This map shows the geographic impact of D. Bahnck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Bahnck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Bahnck more than expected).

Fields of papers citing papers by D. Bahnck

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Bahnck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Bahnck. The network helps show where D. Bahnck may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Bahnck, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Bahnck Line = papers co-authored together D. Bahnck links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Applications of focused ion beams in microelectronics production, design and development Surface and Interface Analysis ·F. A. Stevie,幸之助國場,Hadi Hutomo,R. Hull,D. Bahnck,V. Kannan,Z. Chen-Wishart	1995	58
2	Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes Applied Physics Letters ·R. Hull,F. A. Stevie,D. Bahnck	1995	12
3	Combining transmission electron microscopy with focused ion beam sputtering for microstructural investigations of AlGaAs/GaAs heterojunction bipolar transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·C. W. Snyder,M. Frei,D. Bahnck,L. C. Hopkins,R. Hull,L. R. Harriott,C Kwan Jonathan,T. R. Fullowan,B. Tseng	1995	4
4	Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering Applied Physics Letters ·R. Hull,D. Bahnck,F. A. Stevie,L. A. Koszi,S. N. G. Chu	1993	17
5	Changes in electrical device characteristics during the in situ formation of dislocations Applied Physics Letters ·F. M. Ross,R. Hull,D. Bahnck,J. C. Bean,L. J. Peticolas,C. A. King	1993	37
6	In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctions Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. M. Ross,R. Hull,D. Bahnck,J. C. Bean,Adrian Riegel,R. A. Hamm,H. A. Huggins	1992	8
7	Improvement in heteroepitaxial film quality by a novel substrate patterning geometry Applied Physics Letters ·R. Hull,J. C. Bean,G. S. Higashi,Cleiton Sousa,L. J. Peticolas,D. Bahnck,D. Brasen	1992	32
8	Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys Applied Physics Letters ·R. Hull,J. C. Bean,L. J. Peticolas,D. Bahnck,B. E. Weir,L. C. Feldman	1992	44
9	Changes in Electronic Device Properties During the Formation of Dislocations MRS Proceedings ·Frances M. Ross,R. Hull,D. Bahnck,J. C. Bean,L. J. Peticolas,R. R. Kola,C. A. King	1992	3
10	Strain Relief Mechanisms in The Growth of Ge_xSi_1−x/Si(110) Heterostructures MRS Proceedings ·R. Hull,J. C. Bean,B. E. Weir,L. J. Peticolas,D. Bahnck,L. C. Feldman	1992	1
11	Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model Journal of Applied Physics ·R. Hull,J. C. Bean,D. Bahnck,L. J. Peticolas,K. T. Short,F. C. Unterwald	1991	84
12	The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers. MRS Proceedings ·R. Hull,J. C. Bean,Frances M. Ross,D. Bahnck,Yvonne Völkl	1991	4
13	Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling. MRS Proceedings ·D. Bahnck,R. Hull	1991	1
14	Growth of GexSi1−x alloys on Si(110) surfaces Applied Physics Letters ·R. Hull,J. C. Bean,L. J. Peticolas,D. Bahnck	1991	57
15	Experimental Measurement of Transmission Electron Microscope Specimen Temperature during Ion Milling MRS Proceedings ·D. Bahnck,R. Hull	1990	6
16	Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation MRS Proceedings ·D. Bahnck,J. L. Batstone,Julia M. Phillips	1987	6
17	Single crystal Na3Ga2Li3F12:Cr3+ laser pumped laser experiments AIP conference proceedings ·J. A. Caird,P. Randall Staver,Michelle D. Shinn,H. J. Guggenheim,D. Bahnck	1987	2
18	Heteronucleation onto Si Surfaces MRS Proceedings ·R. Hull,J. C. Bean,Navin Chand,R. E. Leibenguth,D. Bahnck,G Lagodski,J. S. Harris	1987	1
19	Phonon-terminated laser emission from Ni^2+ ions in KMgF_3 Optics Letters ·L. F. Johnson,A. M. Johnson,H. J. Guggenheim,D. Bahnck	1983	35
20	Crystal growth of cyano-platinum complexes by a new diffusion reaction technique Journal of Crystal Growth ·H. J. Guggenheim,D. Bahnck	1974	10

About D. Bahnck

D. Bahnck is a scholar working on Structural Biology, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics, having authored 21 papers that have together received 423 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (8 papers), Electron and X-Ray Spectroscopy Techniques (6 papers), Advanced Electron Microscopy Techniques and Applications (5 papers), Silicon and Solar Cell Technologies (5 papers), Semiconductor materials and devices (4 papers), Silicon Nanostructures and Photoluminescence (4 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Ion-surface interactions and analysis (2 papers). The work is most often cited by research in Structural Biology (33 citations), Surfaces, Coatings and Films (55 citations) and Atomic and Molecular Physics, and Optics (213 citations). D. Bahnck has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include R. Hull, J. C. Bean, L. J. Peticolas, F. A. Stevie, F. C. Unterwald, K. T. Short, H. J. Guggenheim, L. F. Johnson, A. M. Johnson and V. Kannan. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, Optics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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