G. Langouche

2.6k total citations
217 papers, 2.1k citations indexed

About

G. Langouche is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, G. Langouche has authored 217 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 121 papers in Atomic and Molecular Physics, and Optics, 79 papers in Electrical and Electronic Engineering and 66 papers in Materials Chemistry. Recurrent topics in G. Langouche's work include Semiconductor materials and interfaces (75 papers), Silicon and Solar Cell Technologies (47 papers) and Ion-surface interactions and analysis (38 papers). G. Langouche is often cited by papers focused on Semiconductor materials and interfaces (75 papers), Silicon and Solar Cell Technologies (47 papers) and Ion-surface interactions and analysis (38 papers). G. Langouche collaborates with scholars based in Belgium, Switzerland and Germany. G. Langouche's co-authors include A. Vantomme, James Becker, John E. Mahan, J. Dekoster, U. Wahl, I. Dézsi, M. Van Rossum, M. F. Wu, M. de Potter and J. G. Correia and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

G. Langouche

211 papers receiving 2.0k citations

Peers

G. Langouche
Comparison fields: 5 of 63
  • Atomic and Molecular Physics, and Optics 1.1k
  • Electrical and Electronic Engineering 873
  • Materials Chemistry 813
  • Condensed Matter Physics 497
  • Electronic, Optical and Magnetic Materials 383
Replace Paul F. Fewster with:
Paul F. Fewster United Kingdom
С. Л. Молодцов Germany
N. J. Koeman Netherlands
L. Niesen Netherlands
J. F. Wendelken United States
Z. Hurych United States
H. H. Farrell United States
A. Pérez France
G. Crecelius Germany
B. N. Dev India
Paul F. Fewster United Kingdom View profile →
Citations per field, relative to G. Langouche
G. Langouche · 1×
Citations per year, relative to G. Langouche
G. Langouche · 1×

Countries citing papers authored by G. Langouche

Since Specialization
Citations

This map shows the geographic impact of G. Langouche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Langouche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Langouche more than expected).

Fields of papers citing papers by G. Langouche

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Langouche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Langouche. The network helps show where G. Langouche may publish in the future.

Co-authorship network of co-authors of G. Langouche

This figure shows the co-authorship network connecting the top 25 collaborators of G. Langouche. A scholar is included among the top collaborators of G. Langouche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Langouche. G. Langouche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Work Indexed citations
1 21
2 1
3 15
4 11
5 2
6 12
7 4
8 9
9 1
10 5
11
X-ray, te-125 mossbauer and optical studies on s1-xtex
3
12 4
13
Hyperfine interaction of defects in semiconductors
35
14
Proceedings of symposium-f - nuclear methods in semiconductor physics of the e-mrs 1991 spring meeting - strasbourg, france, may 28-30, 1991 - preface
1
15
Proceedings of the international-conference on the applications of the mossbauer-effect ... leuven, 16-20 september 1985 - preface
0
16 1
17
Laser annealing of 57Co sources implanted in Si and Ge
2
18 1
19 1
20
Existence of a quadrupole interaction at fe-57 implanted in si and ge
1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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