J.L. Weyher

4.5k total citations
176 papers, 3.7k citations indexed

About

J.L. Weyher is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J.L. Weyher has authored 176 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 101 papers in Condensed Matter Physics, 96 papers in Electrical and Electronic Engineering and 66 papers in Materials Chemistry. Recurrent topics in J.L. Weyher's work include GaN-based semiconductor devices and materials (101 papers), Semiconductor materials and devices (57 papers) and ZnO doping and properties (41 papers). J.L. Weyher is often cited by papers focused on GaN-based semiconductor devices and materials (101 papers), Semiconductor materials and devices (57 papers) and ZnO doping and properties (41 papers). J.L. Weyher collaborates with scholars based in Poland, Netherlands and Germany. J.L. Weyher's co-authors include S. Porowski, I. Grzegory, J. van de Ven, P.R. Hageman, Igor Dzięcielewski, Ł. Macht, M. Seelmann‐Eggebert, B. Łucznik, T. Wosiński and S. Müller and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

J.L. Weyher

173 papers receiving 3.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.L. Weyher Poland 33 2.4k 1.7k 1.5k 1.5k 916 176 3.7k
E. Bellet‐Amalric France 34 1.9k 0.8× 973 0.6× 1.0k 0.7× 1.7k 1.2× 1.6k 1.8× 161 3.8k
J. Bläsing Germany 39 3.5k 1.5× 2.8k 1.6× 2.2k 1.4× 3.5k 2.4× 1.2k 1.3× 190 6.2k
Jen-Inn Chyi Taiwan 26 1.1k 0.5× 1.3k 0.8× 421 0.3× 943 0.6× 1.4k 1.5× 132 2.5k
J.C. Lodder Netherlands 32 828 0.4× 1.3k 0.8× 1.6k 1.1× 1.3k 0.9× 2.8k 3.1× 229 4.2k
Mitra Dutta United States 33 1.2k 0.5× 2.4k 1.4× 771 0.5× 2.2k 1.5× 2.0k 2.2× 283 4.8k
U. Rossów Germany 27 1.5k 0.7× 1.1k 0.7× 663 0.4× 1.1k 0.7× 1.3k 1.5× 149 2.6k
B. Damilano France 37 3.5k 1.5× 1.6k 1.0× 2.3k 1.5× 1.7k 1.2× 2.4k 2.6× 237 5.1k
S. Einfeldt Germany 39 4.7k 2.0× 2.0k 1.2× 2.6k 1.7× 2.6k 1.7× 1.4k 1.5× 231 5.7k
J. Christen Germany 40 3.1k 1.3× 2.6k 1.6× 1.7k 1.1× 3.1k 2.1× 2.7k 2.9× 263 5.9k
Marek Osiński United States 26 1.1k 0.5× 2.2k 1.3× 453 0.3× 694 0.5× 1.9k 2.1× 257 3.4k

Countries citing papers authored by J.L. Weyher

Since Specialization
Citations

This map shows the geographic impact of J.L. Weyher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.L. Weyher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.L. Weyher more than expected).

Fields of papers citing papers by J.L. Weyher

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.L. Weyher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.L. Weyher. The network helps show where J.L. Weyher may publish in the future.

Co-authorship network of co-authors of J.L. Weyher

This figure shows the co-authorship network connecting the top 25 collaborators of J.L. Weyher. A scholar is included among the top collaborators of J.L. Weyher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.L. Weyher. J.L. Weyher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Weyher, J.L., et al.. (2025). Immobilization of DNA on nanostructured gold and silver substrates via alkanethiolate linkers: The influence of linker length. Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy. 340. 126344–126344. 2 indexed citations
2.
Kowalczyk, Agata, et al.. (2025). Identification of BRCA1 Gene Mutation Variants in Clinical Samples without a Labeling Step─A Comparison of the Functionality and Sensitivity of SPR and SERS Sensors. The Journal of Physical Chemistry C. 129(17). 8239–8251. 2 indexed citations
3.
Kirste, Lutz, Tomasz Sochacki, J.L. Weyher, et al.. (2025). Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach. Progress in Crystal Growth and Characterization of Materials. 71(3). 100668–100668. 1 indexed citations
4.
Weyher, J.L., et al.. (2024). GaN-Based Substrates as Surface-Enhanced Raman Scattering Sensors for Penicillin G: Does the Size of the Analyte Molecule Matter?. The Journal of Physical Chemistry C. 128(21). 8759–8766. 3 indexed citations
5.
Weyher, J.L. & J. J. Kelly. (2024). Defect selective photoetching of GaN: Progress, applications and prospects. Progress in Crystal Growth and Characterization of Materials. 70(2). 100623–100623. 2 indexed citations
6.
Weyher, J.L., et al.. (2023). Extended Defects in SiC: Selective Etching and Raman Study. Journal of Electronic Materials. 52(8). 5039–5046. 3 indexed citations
7.
Budner, Bogusław, et al.. (2023). SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms. Beilstein Journal of Nanotechnology. 14. 552–564. 3 indexed citations
8.
Sochacki, Tomasz, Robert Kucharski, Karolina Grabiańska, et al.. (2023). Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN. Materials. 16(9). 3360–3360. 4 indexed citations
10.
Sochacki, Tomasz, Robert Kucharski, Karolina Grabiańska, et al.. (2022). Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed. Materials. 15(13). 4621–4621. 3 indexed citations
11.
Kirste, Lutz, J.L. Weyher, Julita Smalc‐Koziorowska, et al.. (2022). Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals. Materials. 15(19). 6996–6996. 6 indexed citations
12.
Grabiańska, Karolina, Robert Kucharski, Tomasz Sochacki, et al.. (2022). On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals. Crystals. 12(4). 554–554. 6 indexed citations
13.
Weyher, J.L., et al.. (2022). Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching. The Journal of Physical Chemistry C. 126(2). 1115–1124. 25 indexed citations
14.
Sochacki, Tomasz, et al.. (2019). Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed. Japanese Journal of Applied Physics. 58(SC). SCCB19–SCCB19. 6 indexed citations
15.
Kowalczyk, Agata, Jan Krajczewski, Artur Kowalik, et al.. (2019). New strategy for the gene mutation identification using surface enhanced Raman spectroscopy (SERS). Biosensors and Bioelectronics. 132. 326–332. 46 indexed citations
16.
Paskova, Tania, et al.. (2015). Modulated optical sensitivity with nanostructured gallium nitride. Applied Physics Letters. 106(15). 7 indexed citations
17.
Sochacki, Tomasz, Mikolaj Amilusik, Małgorzata Iwińska, et al.. (2014). Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed. physica status solidi (b). 252(5). 1172–1179. 26 indexed citations
18.
Kamińska, Agnieszka, Evelin Witkowska, Katarzyna Winkler, et al.. (2014). Detection of Hepatitis B virus antigen from human blood: SERS immunoassay in a microfluidic system. Biosensors and Bioelectronics. 66. 461–467. 132 indexed citations
19.
Zauner, A., et al.. (2000). Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities. Applied Physics Letters. 76(17). 2355–2357. 40 indexed citations
20.
Visser, Eric P., J.L. Weyher, & L.J. Giling. (1991). Microstructure changes after annealing of undoped and Cr-doped liquid-encapsulated Czochralski-grown GaAs. Journal of Applied Physics. 69(8). 4234–4246.

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