Gaurav Thareja

551 citations

24 papers · 466 indexed · h-index 11

Co-authors: Yoshio Nishi Krishna C. Saraswat Feng Zhu Manhong Zhang Masaharu Kobayashi Peter B. Griffin Changhwan Choi Jack C. Lee
Topics: Semiconductor materials and devices (23 papers)Advancements in Semiconductor Devices and Circuit Design (15 papers)Ferroelectric and Negative Capacitance Devices (7 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States Italy Germany

In The Last Decade

Gaurav Thareja

22 papers receiving 448 citations

Peers

Countries citing papers authored by Gaurav Thareja

Since Specialization

Citations

This map shows the geographic impact of Gaurav Thareja's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gaurav Thareja with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gaurav Thareja more than expected).

Fields of papers citing papers by Gaurav Thareja

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gaurav Thareja. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gaurav Thareja. The network helps show where Gaurav Thareja may publish in the future.

Co-authorship network of co-authors of Gaurav Thareja

This figure shows the co-authorship network connecting the top 25 collaborators of Gaurav Thareja. A scholar is included among the top collaborators of Gaurav Thareja based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Gaurav Thareja. Gaurav Thareja is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps 2025 ·IRIS UNIMORE (University of Modena and Reggio Emilia) ·(unknown),Andrea Padovani,(unknown),Chinsung Park,(unknown),Mengkun Tian,Suman Datta,Shimeng Yu,Luca Larcher,Gaurav Thareja,Asif Islam Khan	1
2	Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node 2019 ·(unknown),(unknown),(unknown),S. Mittal,El Mehdi Bazizi,Angada B. Sachid,Mehdi Saremi,B. Colombeau,Gaurav Thareja,(unknown),(unknown)	11
3	High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode 2011 ·IEEE Electron Device Letters ·Gaurav Thareja,Saurabh Chopra,(unknown),(unknown),(unknown),Krishna C. Saraswat,Yoshio Nishi	38
4	Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb 2011 ·IEEE Electron Device Letters ·Gaurav Thareja,(unknown),T. I. Kamins,Krishna C. Saraswat,Yoshio Nishi	30
5	High performance germanium n-MOSFET with antimony dopant activation beyond 1×10<sup>20</sup> cm<sup>−3</sup> 2010 ·Gaurav Thareja,Jiale Liang,Saurabh Chopra,(unknown),Nishant Patil,(unknown),Aneesh Nainani,(unknown),(unknown),(unknown),(unknown),J.P. McVittie,T. I. Kamins,Krishna C. Saraswat,Yoshio Nishi	28
6	Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation 2010 ·Journal of The Electrochemical Society ·Munehiro Tada,Jin‐Hong Park,Duygu Kuzum,Gaurav Thareja,(unknown),Yoshio Nishi,Krishna C. Saraswat	22
7	The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics 2010 ·Applied Physics Letters ·Masaharu Kobayashi,Gaurav Thareja,Yun Sun,Niti Goel,(unknown),Wilman Tsai,P. Pianetta,Yoshio Nishi	6
8	Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack 2009 ·Journal of Applied Physics ·Masaharu Kobayashi,Gaurav Thareja,(unknown),Yun Sun,Peter B. Griffin,(unknown),P. Pianetta,Krishna C. Saraswat,Yoshio Nishi	75
9	High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts 2008 ·IEEE Electron Device Letters ·Jia Feng,Gaurav Thareja,Masaharu Kobayashi,(unknown),Andrew W. Poon,(unknown),Peter B. Griffin,S.S. Wong,Yoshio Nishi,J.D. Plummer	54
10	Low D<inf>it</inf> optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-κ Gate stack 2008 ·Gaurav Thareja,Masaharu Kobayashi,Yasuhiro Oshima,J.P. McVittie,Patrick Griffin,Yoshio Nishi	3
11	Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide 2007 ·Applied Physics Letters ·Feng Zhu,S. Koveshnikov,(unknown),(unknown),(unknown),(unknown),Gaurav Thareja,Yu Lan,(unknown),Wilman Tsai,Vadim Tokranov,Michail M. Yakimov,S. Oktyabrsky	8
12	Characteristics of sputtered Hf1−xSixO2∕Si∕GaAs gate stacks 2006 ·Applied Physics Letters ·(unknown),Injo Ok,(unknown),Feng Zhu,(unknown),Gaurav Thareja,Yu Lan,Jack C. Lee	23
13	NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics 2006 ·IEEE Electron Device Letters ·Gaurav Thareja,H.C. Wen,Rusty Harris,P. Majhi,(unknown),J.C. Lee	8
14	Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation 2006 ·Injo Ok,Hyun Chan Kim,(unknown),(unknown),Feng Zhu,Gaurav Thareja,Yu Lan,S. Koveshnikov,Wilman Tsai,Vadim Tokranov,Michail M. Yakimov,S. Oktyabrsky,Jack C. Lee	1
15	Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer 2006 ·IEEE Electron Device Letters ·Kang Min Ok,(unknown),Manhong Zhang,(unknown),Se Jong Rhee,Changhwan Choi,Sitaraman Krishnan,(unknown),Feng Zhu,Gaurav Thareja,J.C. Lee	68
16	Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics 2006 ·Gaurav Thareja,Se Jong Rhee,(unknown),Rusty Harris,Prashant Majhi,Byoung Hun Lee,Jack C. Lee	1
17	Fluorine passivation in poly-Si∕TaN∕HfO2 through ion implantation 2006 ·Applied Physics Letters ·(unknown),Feng Zhu,(unknown),H. S. Kim,Injo Ok,Gaurav Thareja,Liang Yu,Jack C. Lee	2
18	Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation 2006 ·Applied Physics Letters ·(unknown),Injo Ok,Manhong Zhang,Changhwan Choi,(unknown),Feng Zhu,Gaurav Thareja,(unknown),Jack C. Lee	56
19	Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs 2006 ·IEEE Electron Device Letters ·(unknown),Se Jong Rhee,Chang Yong Kang,Feng Zhu,(unknown),Changhwan Choi,Kang Min Ok,Manhong Zhang,Sitaraman Krishnan,Gaurav Thareja,(unknown)	23
20	Mechanism of improved channel carrier mobility for stacked Y2O3∕HfO2 gate dielectric 2006 ·Applied Physics Letters ·Feng Zhu,Chang Yong Kang,Se Jong Rhee,Chang‐Hwan Choi,Siddarth Krishnan,Manhong Zhang,(unknown),(unknown),Injo Ok,Gaurav Thareja,(unknown)	3

About Gaurav Thareja

Gaurav Thareja is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Biomedical Engineering, having authored 24 papers that have together received 466 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (454 citations), Atomic and Molecular Physics, and Optics (159 citations) and Materials Chemistry (121 citations). Gaurav Thareja has collaborated with scholars based in United States, Italy and Germany. Frequent co-authors include Yoshio Nishi, Krishna C. Saraswat, Feng Zhu, Manhong Zhang, Masaharu Kobayashi, Peter B. Griffin, Changhwan Choi, Jack C. Lee, Injo Ok and Yun Sun. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

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