K. Onishi

952 total citations
25 papers, 554 citations indexed

About

K. Onishi is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. Onishi has authored 25 papers receiving a total of 554 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 2 papers in Control and Systems Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. Onishi's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). K. Onishi is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). K. Onishi collaborates with scholars based in United States and Japan. K. Onishi's co-authors include R. Nieh, Sundararaman Gopalan, J.C. Lee, Byoung Hun Lee, Rino Choi, Yongjoo Jeon, Laegu Kang, Wenjie Qi, Chang Seok Kang and S. Krishnan and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

K. Onishi

23 papers receiving 536 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Onishi United States 11 534 134 69 38 13 25 554
Yannick Wimmer Austria 12 571 1.1× 105 0.8× 51 0.7× 10 0.3× 16 1.2× 30 598
Arito Ogawa Japan 10 404 0.8× 118 0.9× 93 1.3× 42 1.1× 22 1.7× 30 421
Elke Erben Germany 12 347 0.6× 170 1.3× 31 0.4× 44 1.2× 12 0.9× 31 364
Y. Ma United States 9 307 0.6× 147 1.1× 37 0.5× 37 1.0× 13 1.0× 17 320
L. Prabhu United States 10 242 0.5× 72 0.5× 28 0.4× 27 0.7× 15 1.2× 17 256
M. Bude United States 4 392 0.7× 217 1.6× 42 0.6× 55 1.4× 12 0.9× 5 409
Alex Demkov United States 7 260 0.5× 209 1.6× 61 0.9× 37 1.0× 26 2.0× 21 304
G. Ribes France 14 924 1.7× 121 0.9× 54 0.8× 55 1.4× 29 2.2× 49 940
E. Luckowski United States 9 309 0.6× 47 0.4× 164 2.4× 31 0.8× 19 1.5× 23 324
Bahman Raeissi Sweden 10 298 0.6× 107 0.8× 111 1.6× 13 0.3× 14 1.1× 28 318

Countries citing papers authored by K. Onishi

Since Specialization
Citations

This map shows the geographic impact of K. Onishi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Onishi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Onishi more than expected).

Fields of papers citing papers by K. Onishi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Onishi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Onishi. The network helps show where K. Onishi may publish in the future.

Co-authorship network of co-authors of K. Onishi

This figure shows the co-authorship network connecting the top 25 collaborators of K. Onishi. A scholar is included among the top collaborators of K. Onishi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Onishi. K. Onishi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Onishi, K., et al.. (2024). Prevalence and characteristics of frailty in older adults in Japan: a cross-sectional study using data from the long-term care insurance system. Journal of Physical Therapy Science. 36(7). 367–371. 1 indexed citations
2.
Onishi, K., et al.. (2021). Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions. Journal of Electronic Materials. 50(3). 1474–1481.
3.
Onishi, K., et al.. (2020). Evaluation of plasma induced defects on silicon substrate by solar cell fabrication process. Japanese Journal of Applied Physics. 59(7). 71003–71003. 8 indexed citations
4.
Onishi, K., et al.. (2019). Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions. Japanese Journal of Applied Physics. 58(SB). SBBF02–SBBF02. 5 indexed citations
5.
Ohshita, Yoshio, K. Onishi, Kyotaro Nakamura, et al.. (2019). Ultra-Thin Lightweight Bendable Crystalline Si Solar Cells for Solar Vehicles. 1131–1134. 2 indexed citations
6.
Onishi, K., et al.. (2019). Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells. ECS Journal of Solid State Science and Technology. 8(4). Q72–Q75. 4 indexed citations
7.
Kannan, Balaji, et al.. (2018). In-line XPS to quantify the changes in interfacial layers of advanced node gate stacks. 45. 84–88. 1 indexed citations
8.
Onishi, K., et al.. (2018). Study on chemical bonding states at electrode–silicon interface fabricated with fire-through control paste. Japanese Journal of Applied Physics. 57(8S3). 08RB23–08RB23. 1 indexed citations
10.
Nieh, R., S. Krishnan, Hag‐Ju Cho, et al.. (2003). Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices. 186–187. 12 indexed citations
11.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates. IEEE Electron Device Letters. 24(4). 254–256. 6 indexed citations
12.
Lu, Qiang, Hideki Takeuchi, Tsu-Jae King, et al.. (2003). Hot carrier reliability of n-MOSFET with ultra-thin HfO/sub 2/ gate dielectric and poly-Si gate. 429–430. 8 indexed citations
13.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2002). Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics. 40–41. 17 indexed citations
14.
Kang, Chang Seok, K. Onishi, Sundararaman Gopalan, et al.. (2002). Structural and electrical properties of HfO2 with top nitrogen incorporated layer. IEEE Electron Device Letters. 23(5). 249–251. 45 indexed citations
15.
Gopalan, Sundararaman, K. Onishi, R. Nieh, et al.. (2002). Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates. Applied Physics Letters. 80(23). 4416–4418. 38 indexed citations
16.
Choi, Rino, Chang Seok Kang, Byoung Hun Lee, et al.. (2002). High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation. 26 indexed citations
17.
Kang, Laegu, Yongjoo Jeon, K. Onishi, et al.. (2002). Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate. 44–45. 19 indexed citations
18.
Onishi, K., Laegu Kang, Rino Choi, et al.. (2002). Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's. 131–132. 12 indexed citations
19.
Kang, Laegu, Byoung Hun Lee, Wenjie Qi, et al.. (2000). Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric. IEEE Electron Device Letters. 21(4). 181–183. 202 indexed citations
20.
Onishi, K., et al.. (1981). Collective control and independent control of electromagnetically levitated trucks. Electrical Engineering in Japan. 101(1). 128–135. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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