J. Fulford

470 total citations
28 papers, 315 citations indexed

About

J. Fulford is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, J. Fulford has authored 28 papers receiving a total of 315 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Condensed Matter Physics. Recurrent topics in J. Fulford's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). J. Fulford is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). J. Fulford collaborates with scholars based in United States, Canada and Germany. J. Fulford's co-authors include D. Wristers, L.K. Han, Dim‐Lee Kwong, Mohsin Ahmad Bhat, Mark Gardner, D. L. Kwong, Martin Allen, J. C. Lee, H.F. Luan and Jack Lynch and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

J. Fulford

25 papers receiving 296 citations

Peers

Countries citing papers authored by J. Fulford

Since Specialization

Citations

This map shows the geographic impact of J. Fulford's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Fulford with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Fulford more than expected).

Fields of papers citing papers by J. Fulford

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Fulford. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Fulford. The network helps show where J. Fulford may publish in the future.

Co-authorship network of co-authors of J. Fulford

This figure shows the co-authorship network connecting the top 25 collaborators of J. Fulford. A scholar is included among the top collaborators of J. Fulford based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Fulford. J. Fulford is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-Performance HfO₂/Al₂O₃ Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform 2024 ·IEEE Transactions on Electron Devices ·Partha Mukhopadhyay, (unknown), (unknown), (unknown), Jennifer Perez, (unknown), John A. Allgair, (unknown), Winston V. Schoenfeld, (unknown), (unknown), (unknown), Dina H. Triyoso, (unknown), (unknown), J. Fulford	4
2	One Time Programming Device Yield Study Based On Anti-Fuse Gate Oxide Breakdown on P-type and N-type Substrates 2006 ·(unknown), Young Joon Ahn, (unknown), (unknown), J. Fulford	4
3	Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs 2005 ·(unknown), (unknown), (unknown), H.F. Luan, Mark Gardner, J. Fulford, D. L. Kwong	3
4	Enhanced hot-hole degradation in P/sup +/-poly PMOSFETs with oxynitride gate dielectrics 2003 ·(unknown), Mark Gardner, J. Fulford, D. Wristers, Atul Joshi, (unknown), D. L. Kwong	2
5	Ultra thin (>20 Å) CVD Si/sub 3/N/sub 4/ gate dielectric for deep-sub-micron CMOS devices 2002 ·Sook‐Keun Song, H.F. Luan, (unknown), Mark Gardner, J. Fulford, Martin Allen, Dim‐Lee Kwong	3
6	Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics 2002 ·Mohsin Ahmad Bhat, D. Wristers, (unknown), L.K. Han, J. Fulford, D. L. Kwong	2
7	The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides 2002 ·A. Chou, (unknown), K. Sathish Kumar, (unknown), Mark Gardner, (unknown), J. Fulford, J.C. Lee	2
8	The effect of hydrogen denudation on thin oxides, device performance, and epitaxial elimination 2002 ·J. Fulford, D. Wristers, Mark Gardner	1
9	Polarity dependence of dielectric breakdown in scaled SiO/sub 2/ 2002 ·L.K. Han, Mohsin Ahmad Bhat, D. Wristers, J. Fulford, Dim‐Lee Kwong	14
10	Effects of Korean littoral environment on acoustic propagation 2001 ·IEEE Journal of Oceanic Engineering ·P. Abbot, (unknown), Ira Dyer, (unknown), J. Fulford, Jack Lynch, Glen Gawarkiewicz, (unknown)	8
11	Enhanced Degradation in P⁺-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection 1999 ·MRS Proceedings ·(unknown), Mark Gardner, J. Fulford, D. Wristers, (unknown), Dim‐Lee Kwong	1
12	Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO 1999 ·MRS Proceedings ·Sook‐Keun Song, (unknown), H.F. Luan, Dim‐Lee Kwong, Mark Gardner, J. Fulford, Martin Allen, (unknown), R. J. Evans	3
13	High Quality Ultra Thin CVD Si₃N₄Gate Dielectrics Fabricated By Rapid Thermal Process 1999 ·MRS Proceedings ·Sook‐Keun Song, H.F. Luan, Mark Gardner, J. Fulford, Martin Allen, Dim‐Lee Kwong	1
14	Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation 1996 ·D. Wristers, (unknown), Ingrid De Wolf, L.K. Han, Dim‐Lee Kwong, J. Fulford	2
15	Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides 1996 ·Applied Physics Letters ·A. Chou, Kafai Lai, (unknown), Jack C. Lee, Mark Gardner, J. Fulford	5
16	Degradation of oxynitride gate dielectric reliability due to boron diffusion 1996 ·Applied Physics Letters ·D. Wristers, L.K. Han, (unknown), (unknown), Dim‐Lee Kwong, Martin Allen, J. Fulford	74
17	Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides 1995 ·Applied Physics Letters ·(unknown), (unknown), (unknown), J. C. Lee, Mark Gardner, J. Fulford	28
18	Effects of chemical composition on the electrical properties of NO-nitrided SiO2 1995 ·Applied Physics Letters ·Mohsin Ahmad Bhat, L.K. Han, D. Wristers, (unknown), D. L. Kwong, J. Fulford	87
19	‘‘Turn-around’’ effects of stress-induced leakage current of ultrathin N2O-annealed oxides 1995 ·Applied Physics Letters ·Kafai Lai, Wei-Ming Chen, (unknown), Jack Lee, Mark Gardner, J. Fulford	14
20	Generation of v.l.f. waveforms 1964 ·Electronics and Power ·J. Fulford	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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