J. Finder

1.3k total citations
24 papers, 1.1k citations indexed

About

J. Finder is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Finder has authored 24 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Finder's work include Ferroelectric and Piezoelectric Materials (16 papers), Semiconductor materials and devices (16 papers) and Electronic and Structural Properties of Oxides (13 papers). J. Finder is often cited by papers focused on Ferroelectric and Piezoelectric Materials (16 papers), Semiconductor materials and devices (16 papers) and Electronic and Structural Properties of Oxides (13 papers). J. Finder collaborates with scholars based in United States and Japan. J. Finder's co-authors include K. Eisenbeiser, R. Droopad, Zhiyi Yu, C. Overgaard, W. J. Ooms, J. Curless, J. Ramdani, J. A. Hallmark, Kazumi Kato and Sandwip K. Dey and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of the American Ceramic Society.

In The Last Decade

J. Finder

23 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Finder United States 16 964 839 272 227 112 24 1.1k
T. Krajewski Poland 20 1.0k 1.1× 868 1.0× 366 1.3× 101 0.4× 69 0.6× 54 1.2k
J. Ramdani United States 16 940 1.0× 1.0k 1.2× 218 0.8× 95 0.4× 230 2.1× 43 1.3k
L. A. Wills United States 14 854 0.9× 451 0.5× 268 1.0× 442 1.9× 264 2.4× 27 1.0k
P. L. Zhang China 9 775 0.8× 247 0.3× 308 1.1× 440 1.9× 74 0.7× 27 824
M. Pawełczyk Poland 18 742 0.8× 447 0.5× 309 1.1× 235 1.0× 70 0.6× 54 802
J. Portelles Cuba 17 996 1.0× 545 0.6× 624 2.3× 199 0.9× 47 0.4× 76 1.1k
C. Overgaard United States 14 699 0.7× 777 0.9× 187 0.7× 60 0.3× 135 1.2× 19 905
M. H. Ervin United States 8 730 0.8× 566 0.7× 164 0.6× 206 0.9× 32 0.3× 12 774
K. J. Hubbard United States 5 678 0.7× 976 1.2× 188 0.7× 40 0.2× 187 1.7× 6 1.1k
Weilie Zhong China 15 601 0.6× 277 0.3× 245 0.9× 251 1.1× 69 0.6× 62 651

Countries citing papers authored by J. Finder

Since Specialization
Citations

This map shows the geographic impact of J. Finder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Finder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Finder more than expected).

Fields of papers citing papers by J. Finder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Finder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Finder. The network helps show where J. Finder may publish in the future.

Co-authorship network of co-authors of J. Finder

This figure shows the co-authorship network connecting the top 25 collaborators of J. Finder. A scholar is included among the top collaborators of J. Finder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Finder. J. Finder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moore, Karen, Philippe Renaud, D. Hill, et al.. (2020). High Performance 150 mm RF GaN Technology with Low Memory Effects. 1–4. 6 indexed citations
2.
Li, Hua, et al.. (2005). Dielectric properties of epitaxial Ba0.5Sr0.5TiO3 films on amorphous SiO2 on sapphire. Applied Physics Letters. 87(7). 19 indexed citations
3.
Eisenbeiser, K., Ravi Droopad, Zhiyi Yu, et al.. (2003). Crystalline oxide-based devices on silicon substrates. Journal of Electronic Materials. 32(8). 868–871. 7 indexed citations
4.
Wang, Yu, C. S. Ganpule, Hua Li, et al.. (2002). Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layers. Applied Physics Letters. 80(1). 97–99. 107 indexed citations
5.
Yu, Zhiyi, Yong Liang, Hua Li, et al.. (2002). Progress in Epitaxial Oxides on Semiconductors. MRS Proceedings. 747. 2 indexed citations
6.
Nagarajan, V., Andrei Stanishevsky, Le Chen, et al.. (2002). Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si. Applied Physics Letters. 81(22). 4215–4217. 110 indexed citations
7.
Talin, A. Alec, Steven M. Smith, J. Finder, et al.. (2002). Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method. Applied Physics Letters. 81(6). 1062–1064. 24 indexed citations
8.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2002). Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics. 40–41. 17 indexed citations
9.
Eisenbeiser, K., R. Emrick, Ravi Droopad, et al.. (2002). GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer. IEEE Electron Device Letters. 23(6). 300–302. 70 indexed citations
10.
Droopad, Ravi, Zhiyi Yu, J. Ramdani, et al.. (2001). Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy. Materials Science and Engineering B. 87(3). 292–296. 35 indexed citations
11.
Yu, Zhiyi, J. Ramdani, J. Curless, et al.. (2000). Epitaxial oxide thin films on Si(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 2139–2145. 98 indexed citations
12.
Ramdani, J., Ravi Droopad, Zhiyi Yu, et al.. (2000). Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy. Applied Surface Science. 159-160. 127–133. 33 indexed citations
13.
Yu, Zhiyi, J. Ramdani, J. Curless, et al.. (2000). Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1653–1657. 61 indexed citations
14.
Gao, Yufei, Shuai He, Mark Engelhard, et al.. (2000). Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 87(1). 124–132. 19 indexed citations
15.
Eisenbeiser, K., J. Finder, Zhiping Yu, et al.. (2000). Field effect transistors with SrTiO3 gate dielectric on Si. Applied Physics Letters. 76(10). 1324–1326. 243 indexed citations
16.
Yu, Zhiyi, Ravi Droopad, J. Ramdani, et al.. (1999). Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy. MRS Proceedings. 567. 24 indexed citations
17.
Finder, J., David F. Richards, & James B. Adams. (1999). A molecular dynamics study of defect production due to low-energy collisions. Modelling and Simulation in Materials Science and Engineering. 7(4). 495–502. 2 indexed citations
18.
Kato, Kazumi, et al.. (1998). Sol‐Gel Route to Ferroelectric Layer‐Structured Perovskite SrBi 2 Ta 2 O 9 and SrBi 2 Nb 2 O 9 Thin Films. Journal of the American Ceramic Society. 81(7). 1869–1875. 128 indexed citations
19.
Kato, Kenichi, Chunhua Zheng, J. Finder, Satadru Dey, & Y. Torii. (1998). Formation of complex alkoxides to control layer structure in Sr-Bi-M-O (M: Ta or Nb) perovskite thin films. Journal of Materials Science Materials in Electronics. 9(6). 457–464. 2 indexed citations
20.
Kato, Kazumi, J. Finder, Sandwip K. Dey, & Yasuyoshi Torii. (1997). Low-temperature crystallization and ferroelectric properties of sol-gel derived layer-structured perovskite thin films. Integrated ferroelectrics. 18(1-4). 237–247. 14 indexed citations

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