R. Moazzami

1.3k total citations
29 papers, 938 citations indexed

About

R. Moazzami is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, R. Moazzami has authored 29 papers receiving a total of 938 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in R. Moazzami's work include Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (17 papers) and Ferroelectric and Negative Capacitance Devices (12 papers). R. Moazzami is often cited by papers focused on Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (17 papers) and Ferroelectric and Negative Capacitance Devices (12 papers). R. Moazzami collaborates with scholars based in United States and Italy. R. Moazzami's co-authors include Chenming Hu, W.H. Shepherd, Chen Hu, P.D. Maniar, Robert E. Jones, J.C. Lee, C. J. Mogab, A. C. Campbell, C. Sudhama and P. Zürcher and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

R. Moazzami

27 papers receiving 891 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
R. Moazzami	646	626	299	209	92	29	938
Ho-Kyu Kang	639 1.0×	421 0.7×	114 0.4×	95 0.5×	64 0.7×	35	722
F. Chu	632 1.0×	943 1.5×	478 1.6×	424 2.0×	82 0.9×	25	1.0k
Y. Arimoto	876 1.4×	318 0.5×	247 0.8×	77 0.4×	96 1.0×	67	1.1k
M.J.E. Ulenaers	403 0.6×	453 0.7×	396 1.3×	90 0.4×	142 1.5×	15	672
Walter Hartner	415 0.6×	293 0.5×	147 0.5×	92 0.4×	54 0.6×	42	550
Howard R. Huff	1.1k 1.7×	347 0.6×	109 0.4×	80 0.4×	201 2.2×	92	1.2k
Bich-Yen Nguyen	1.3k 2.0×	355 0.6×	123 0.4×	88 0.4×	96 1.0×	119	1.4k
Barry O’Sullivan	970 1.5×	333 0.5×	99 0.3×	63 0.3×	188 2.0×	109	1.1k
M. Czernohorsky	1.8k 2.7×	1.2k 1.8×	89 0.3×	143 0.7×	126 1.4×	90	1.8k
P. Fazan	1.2k 1.9×	282 0.5×	186 0.6×	123 0.6×	188 2.0×	115	1.3k

Countries citing papers authored by R. Moazzami

Since Specialization

Citations

This map shows the geographic impact of R. Moazzami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Moazzami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Moazzami more than expected).

Fields of papers citing papers by R. Moazzami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Moazzami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Moazzami. The network helps show where R. Moazzami may publish in the future.

Co-authorship network of co-authors of R. Moazzami

This figure shows the co-authorship network connecting the top 25 collaborators of R. Moazzami. A scholar is included among the top collaborators of R. Moazzami based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Moazzami. R. Moazzami is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Moazzami, R., P.D. Maniar, Robert E. Jones, A. C. Campbell, & C. J. Mogab. (2005). Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory. 44–47. 1 indexed citations

Moazzami, R., Chen Hu, & W.H. Shepherd. (2002). Endurance properties of ferroelectric PZT thin films. 417–420. 5 indexed citations

Kim, Jiyoung, R. Khamankar, C. Sudhama, et al.. (2002). La doped PZT films for gigabit DRAM technology. 151–152. 2 indexed citations

Rosenbaum, Elyse, R. Moazzami, & Can Hu. (2002). Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testing. 214–218. 3 indexed citations

Shin, Hang‐Sik, et al.. (2002). Characterization of thin oxide damage during aluminum etching and photoresist ashing processes. 210–213.

Moazzami, R., et al.. (2002). A high quality stacked thermal/LPCVD gate oxide for ULSI. 8. 52–56.

Moazzami, R., P.D. Maniar, Robert E. Jones, & C. J. Mogab. (2002). Integration of ferroelectric capacitor technology with CMOS. 91. 55–56. 3 indexed citations

Jones, Robert E., P.D. Maniar, A. C. Campbell, et al.. (1995). Materials interactions in the integration of PZT ferroelectric capacitors. Integrated ferroelectrics. 6(1-4). 81–92. 17 indexed citations

Moazzami, R.. (1995). Ferroelectric thin film technology for semiconductor memory. Semiconductor Science and Technology. 10(4). 375–390. 50 indexed citations

10.

Kim, Jiyoung, R. Khamankar, Bo Jiang, et al.. (1994). Effect of Microstructure on the Electrical Characteristics of Sol-Gel Derived PZT Thin Films. MRS Proceedings. 361. 3 indexed citations

11.

Sudhama, C., A. C. Campbell, P.D. Maniar, et al.. (1994). A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors. Journal of Applied Physics. 75(2). 1014–1022. 118 indexed citations

12.

Moazzami, R. & Chenming Hu. (1993). A high-quality stacked thermal/LPCVD gate oxide technology for ULSI. IEEE Electron Device Letters. 14(2). 72–73. 24 indexed citations

13.

Moazzami, R., Chen Hu, & W.H. Shepherd. (1992). Electrical characteristics of ferroelectric PZT thin films for DRAM applications. IEEE Transactions on Electron Devices. 39(9). 2044–2049. 228 indexed citations

14.

Moazzami, R., et al.. (1992). Anomalous remanent polarization in ferroelectric capacitors. Integrated ferroelectrics. 2(1-4). 121–131. 10 indexed citations

15.

Moazzami, R., et al.. (1990). Electrical Conduction and Breakdown in Sol-Gel Derived PZT Thin Films. Reliability physics. 231–236. 8 indexed citations

16.

Moazzami, R., et al.. (1990). A ferroelectric DRAM cell for high density NVRAMs. 15–16. 11 indexed citations

17.

Moazzami, R. & Chenming Hu. (1990). Projecting gate oxide reliability and optimizing reliability screens. IEEE Transactions on Electron Devices. 37(7). 1643–1650. 96 indexed citations

18.

Moazzami, R., et al.. (1990). A ferroelectric DRAM cell for high-density NVRAMs. IEEE Electron Device Letters. 11(10). 454–456. 62 indexed citations

19.

Moazzami, R., J.C. Lee, & Chenming Hu. (1989). Temperature acceleration of time-dependent dielectric breakdown. IEEE Transactions on Electron Devices. 36(11). 2462–2465. 120 indexed citations

20.

Moazzami, R., et al.. (1987). Oxides grown on textured single-crystal silicon for low programming voltage non-volatile memory applications. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 889–891. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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