R. Moazzami

1.3k total citations
29 papers, 938 citations indexed

About

R. Moazzami is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, R. Moazzami has authored 29 papers receiving a total of 938 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 3 papers in Biomedical Engineering. Recurrent topics in R. Moazzami's work include Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (17 papers) and Ferroelectric and Negative Capacitance Devices (12 papers). R. Moazzami is often cited by papers focused on Ferroelectric and Piezoelectric Materials (17 papers), Semiconductor materials and devices (17 papers) and Ferroelectric and Negative Capacitance Devices (12 papers). R. Moazzami collaborates with scholars based in United States and Italy. R. Moazzami's co-authors include Chenming Hu, W.H. Shepherd, Chen Hu, P.D. Maniar, Robert E. Jones, J.C. Lee, C. J. Mogab, A. C. Campbell, C. Sudhama and Y. T. Lii and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

R. Moazzami

27 papers receiving 891 citations

Peers

Countries citing papers authored by R. Moazzami

Since Specialization

Citations

This map shows the geographic impact of R. Moazzami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Moazzami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Moazzami more than expected).

Fields of papers citing papers by R. Moazzami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Moazzami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Moazzami. The network helps show where R. Moazzami may publish in the future.

Co-authorship network of co-authors of R. Moazzami

This figure shows the co-authorship network connecting the top 25 collaborators of R. Moazzami. A scholar is included among the top collaborators of R. Moazzami based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Moazzami. R. Moazzami is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ferroelectric PZT Thin Films For Low-voltage Nonvolatile Memory 2005 ·R. Moazzami, P.D. Maniar, Robert E. Jones, A. C. Campbell, C. J. Mogab	1
2	La doped PZT films for gigabit DRAM technology 2002 ·Jiyoung Kim, R. Khamankar, C. Sudhama, Bo Jiang, (unknown), (unknown), R. Moazzami, Robert Jones, C. J. Mogab	2
3	A high quality stacked thermal/LPCVD gate oxide for ULSI 2002 ·R. Moazzami, (unknown)	0
4	Characterization of thin oxide damage during aluminum etching and photoresist ashing processes 2002 ·Hang‐Sik Shin, (unknown), R. Moazzami, T. Horiuchi, Chenming Hu	0
5	Implications of waveform and thickness dependence of SiO/sub 2/ breakdown on accelerated testing 2002 ·Elyse Rosenbaum, R. Moazzami, Can Hu	3
6	Endurance properties of ferroelectric PZT thin films 2002 ·R. Moazzami, Chen Hu, W.H. Shepherd	5
7	Integration of ferroelectric capacitor technology with CMOS 2002 ·R. Moazzami, P.D. Maniar, Robert E. Jones, C. J. Mogab	3
8	Impact of post processing damage on the performance of high dielectric constant PLZT thin film capacitors for ULSI DRAM applications 2002 ·R. Khamankar, Jiyoung Kim, Bo Jiang, C. Sudhama, (unknown), R. Moazzami, Robert Jones, Joowon Lee	2
9	Materials interactions in the integration of PZT ferroelectric capacitors 1995 ·Integrated ferroelectrics ·Robert E. Jones, P.D. Maniar, A. C. Campbell, R. Moazzami, (unknown), R. Gregory, M. Kottke, (unknown), John R. Williams, J.M. Ferrero	17
10	Ferroelectric thin film technology for semiconductor memory 1995 ·Semiconductor Science and Technology ·R. Moazzami	50
11	High-permittivity lead-based perovskite dielectrics for DRAM applications 1994 ·Integrated ferroelectrics ·Robert E. Jones, P.D. Maniar, A. C. Campbell, R. Moazzami, C. J. Mogab	10
12	A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors 1994 ·Journal of Applied Physics ·C. Sudhama, A. C. Campbell, P.D. Maniar, Robert E. Jones, R. Moazzami, C. J. Mogab, (unknown)	118
13	Anomalous remanent polarization in ferroelectric capacitors 1992 ·Integrated ferroelectrics ·(unknown), R. Moazzami, Y. Nissan‐Cohen	10
14	Electrical characteristics of ferroelectric PZT thin films for DRAM applications 1992 ·IEEE Transactions on Electron Devices ·R. Moazzami, Chen Hu, W.H. Shepherd	228
15	Impact of Polarization Relaxation on Ferroelectric Memory Performance 1991 ·R. Moazzami, (unknown), Y. Nissan‐Cohen, W.H. Shepherd, (unknown), Chenming Hu	13
16	Electrical Conduction and Breakdown in Sol-Gel Derived PZT Thin Films 1990 ·Reliability physics ·R. Moazzami, Chenming Hu, (unknown)	8
17	A ferroelectric DRAM cell for high density NVRAMs 1990 ·R. Moazzami, (unknown), W.H. Shepherd	11
18	A ferroelectric DRAM cell for high-density NVRAMs 1990 ·IEEE Electron Device Letters ·R. Moazzami, (unknown), W.H. Shepherd	62
19	Temperature acceleration of time-dependent dielectric breakdown 1989 ·IEEE Transactions on Electron Devices ·R. Moazzami, J.C. Lee, Chenming Hu	120
20	Oxides grown on textured single-crystal silicon for low programming voltage non-volatile memory applications 1987 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown), (unknown), R. Moazzami, P.K. Ko, Chao Hu	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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