Sanghun Jeon

10.6k total citations · 2 hit papers
222 papers, 8.4k citations indexed

About

Sanghun Jeon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Sanghun Jeon has authored 222 papers receiving a total of 8.4k indexed citations (citations by other indexed papers that have themselves been cited), including 210 papers in Electrical and Electronic Engineering, 111 papers in Materials Chemistry and 34 papers in Biomedical Engineering. Recurrent topics in Sanghun Jeon's work include Semiconductor materials and devices (128 papers), Ferroelectric and Negative Capacitance Devices (100 papers) and Advanced Memory and Neural Computing (58 papers). Sanghun Jeon is often cited by papers focused on Semiconductor materials and devices (128 papers), Ferroelectric and Negative Capacitance Devices (100 papers) and Advanced Memory and Neural Computing (58 papers). Sanghun Jeon collaborates with scholars based in South Korea, United Kingdom and United States. Sanghun Jeon's co-authors include Youngin Goh, Jihyun Bae, Arokia Nathan, U‐In Chung, Hyunsang Hwang, Taeho Kim, Junghyeon Hwang, Dipjyoti Das, Minhyun Jung and V. Gaddam and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

Sanghun Jeon

214 papers receiving 8.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

2014 1.1k citations Sanghun Jeon et al. profile →
Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

2012 800 citations Sanghun Jeon et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Sanghun Jeon South Korea	46	6.3k	3.4k	3.1k	2.0k	1.1k	222	8.4k
Zhibin Yu United States	40	4.8k 0.8×	2.5k 0.7×	4.8k 1.5×	2.9k 1.5×	982 0.9×	88	8.0k
Yong‐Hoon Kim South Korea	43	5.5k 0.9×	2.8k 0.8×	2.4k 0.8×	2.0k 1.0×	458 0.4×	253	7.1k
Xiandi Wang China	33	2.3k 0.4×	2.0k 0.6×	4.1k 1.3×	1.8k 0.9×	1.4k 1.3×	44	5.8k
Toshitake Takahashi United States	18	3.2k 0.5×	3.3k 1.0×	3.2k 1.0×	918 0.5×	529 0.5×	19	5.8k
Reinhard Schwödiauer Austria	34	4.0k 0.6×	2.0k 0.6×	4.9k 1.6×	3.0k 1.5×	852 0.8×	88	7.9k
U‐In Chung South Korea	41	7.5k 1.2×	3.0k 0.9×	2.0k 0.6×	2.5k 1.3×	850 0.8×	180	9.4k
Ruomeng Yu United States	42	3.8k 0.6×	2.9k 0.8×	6.3k 2.0×	2.6k 1.3×	1.7k 1.6×	46	8.5k
Le Cai China	35	2.5k 0.4×	1.9k 0.6×	2.3k 0.7×	1.6k 0.8×	443 0.4×	81	5.0k
Jinyou Shao China	48	3.7k 0.6×	1.5k 0.4×	4.3k 1.4×	1.9k 0.9×	984 0.9×	211	7.7k
Jong Won Chung South Korea	28	4.2k 0.7×	1.3k 0.4×	5.0k 1.6×	4.3k 2.2×	987 0.9×	62	7.9k

Countries citing papers authored by Sanghun Jeon

Since Specialization

Citations

This map shows the geographic impact of Sanghun Jeon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sanghun Jeon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sanghun Jeon more than expected).

Fields of papers citing papers by Sanghun Jeon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sanghun Jeon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sanghun Jeon. The network helps show where Sanghun Jeon may publish in the future.

Co-authorship network of co-authors of Sanghun Jeon

This figure shows the co-authorship network connecting the top 25 collaborators of Sanghun Jeon. A scholar is included among the top collaborators of Sanghun Jeon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sanghun Jeon. Sanghun Jeon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hwang, Junghyeon, et al.. (2025). An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devices. Journal of Materials Chemistry C. 13(48). 23819–23830.

Kim, Seungyeob, et al.. (2025). Very high frequency (∼100 MHz) plasma enhanced atomic layer deposition high-κ hafnium zirconium oxide capacitors near morphotropic phase boundary with low current density & high-κ for DRAM technology. Journal of Materials Chemistry C. 13(13). 6702–6707.

Kim, Taeho, S.S. Park, Wanki Kim, et al.. (2025). Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer. IEEE Transactions on Electron Devices. 72(9). 4896–4901.

Kim, Taeho, et al.. (2025). Imprinted Antiferroelectric With Low Damage Process for High Performance Negative Capacitance NAND Flash Memory. IEEE Electron Device Letters. 46(4). 572–575.

Choi, Hyojun, HyunJun Kang, Hoon Kim, et al.. (2024). Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET. IEEE Transactions on Electron Devices. 71(11). 6627–6632. 4 indexed citations

Hwang, Junghyeon, et al.. (2024). The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET. IEEE Journal of the Electron Devices Society. 12. 988–992.

Choi, Hyojun, Kang Kim, Do Hyung Kim, et al.. (2024). Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor. IEEE Electron Device Letters. 45(12). 2351–2354. 1 indexed citations

Gaddam, V., et al.. (2024). HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process. IEEE Transactions on Electron Devices. 71(9). 5618–5623. 1 indexed citations

Lee, Sang-Ho, et al.. (2024). Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations. Journal of Materials Chemistry C. 12(38). 15435–15443. 2 indexed citations

10.

Lee, Sujeong, et al.. (2024). Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low‐Temperature Crystallization Process for Next‐Generation Dynamic Random Access Memory Technology. physica status solidi (RRL) - Rapid Research Letters. 18(9).

11.

Jung, Minhyun, Seungyeob Kim, Junghyeon Hwang, et al.. (2024). Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of Hf_xZr_1‐xO₂ Thin Film. Advanced Electronic Materials. 10(2). 7 indexed citations

12.

Zhang, Lingwei, et al.. (2024). Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET. IEEE Transactions on Electron Devices. 71(3). 1865–1871. 4 indexed citations

13.

Jang, Seonghoon, Yongjun Kim, Jihoon Jeon, et al.. (2023). Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization. Journal of Alloys and Compounds. 965. 171247–171247. 3 indexed citations

14.

Lee, Youngkwan, et al.. (2022). Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors. IEEE Transactions on Electron Devices. 70(1). 349–353. 11 indexed citations

15.

Hwang, Junghyeon, et al.. (2022). Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology. IEEE Electron Device Letters. 43(7). 1049–1052. 11 indexed citations

16.

Kim, Taeho, et al.. (2021). Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory. physica status solidi (RRL) - Rapid Research Letters. 16(10). 4 indexed citations

17.

Jeon, Sanghun, et al.. (2016). Thermoelectric temperature sensors by printing with a simple office inkjet printer. TechConnect Briefs. 4(2016). 151–155. 1 indexed citations

18.

Kim, Taeho, Yunyong Nam, Ji‐Hyun Hur, Sang‐Hee Ko Park, & Sanghun Jeon. (2016). Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors. Nanotechnology. 27(32). 325203–325203. 16 indexed citations

19.

Hur, Ji‐Hyun & Sanghun Jeon. (2015). Dislocation scatterings in p-type Si_1−xGe_xunder weak electric field. Nanotechnology. 26(49). 495201–495201. 3 indexed citations

20.

Kim, Sang‐Wook, Sunil Kim, Changjung Kim, et al.. (2011). The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors. Solid-State Electronics. 62(1). 77–81. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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