M.F. Li

1.0k total citations
38 papers, 830 citations indexed

About

M.F. Li is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M.F. Li has authored 38 papers receiving a total of 830 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in M.F. Li's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). M.F. Li is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). M.F. Li collaborates with scholars based in Singapore, United States and Taiwan. M.F. Li's co-authors include Dim‐Lee Kwong, Chunxiang Zhu, Albert Chin, H.Y. Yu, Anyan Du, Tony Low, Mingbin Yu, Chen Shen, Yee‐Chia Yeo and D.S.H. Chan and has published in prestigious journals such as Physical review. B, Condensed matter, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

M.F. Li

36 papers receiving 792 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.F. Li Singapore 17 782 191 178 80 47 38 830
A. Powell United Kingdom 13 549 0.7× 117 0.6× 225 1.3× 68 0.8× 69 1.5× 32 639
Sudha Gupta India 10 220 0.3× 89 0.5× 60 0.3× 42 0.5× 38 0.8× 32 316
M. F. Vilela United States 14 470 0.6× 104 0.5× 337 1.9× 83 1.0× 8 0.2× 51 510
G.F. Derbenwick United States 13 629 0.8× 238 1.2× 97 0.5× 78 1.0× 47 1.0× 24 689
Y.A. El-Mansy Canada 10 810 1.0× 91 0.5× 108 0.6× 157 2.0× 33 0.7× 21 856
A. Kosarev Mexico 10 245 0.3× 147 0.8× 106 0.6× 78 1.0× 20 0.4× 48 337
A. Kanda Japan 13 268 0.3× 228 1.2× 208 1.2× 61 0.8× 27 0.6× 52 514
Manabu Itsumi Japan 14 564 0.7× 292 1.5× 163 0.9× 74 0.9× 31 0.7× 59 634
B. Ghyselen France 13 513 0.7× 107 0.6× 193 1.1× 164 2.0× 29 0.6× 53 581
Katsuyoshi Washio Japan 20 1.2k 1.5× 216 1.1× 215 1.2× 169 2.1× 37 0.8× 157 1.3k

Countries citing papers authored by M.F. Li

Since Specialization
Citations

This map shows the geographic impact of M.F. Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.F. Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.F. Li more than expected).

Fields of papers citing papers by M.F. Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.F. Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.F. Li. The network helps show where M.F. Li may publish in the future.

Co-authorship network of co-authors of M.F. Li

This figure shows the co-authorship network connecting the top 25 collaborators of M.F. Li. A scholar is included among the top collaborators of M.F. Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.F. Li. M.F. Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Xiaohui, M.F. Li, Yang Jiang, et al.. (2025). Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics. Nanomaterials. 15(2). 87–87. 4 indexed citations
2.
He, Lin, Yang Jiang, Fangzhou Du, et al.. (2025). Electrically reconfigurable surface acoustic wave phase shifters based on ZnO TFTs on LiNbO3 substrate. International Journal of Extreme Manufacturing. 7(3). 35504–35504. 1 indexed citations
3.
4.
Du, Fangzhou, Yang Jiang, M.F. Li, et al.. (2024). Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique. Nanomaterials. 14(18). 1471–1471. 1 indexed citations
5.
Jiang, Yang, Shuhui Shi, Shaocong Wang, et al.. (2024). In-sensor reservoir computing for gas pattern recognition using Pt-AlGaN/GaN HEMTs. Device. 3(1). 100550–100550. 6 indexed citations
6.
7.
Zhu, Shiyang, Rui Li, S.J. Lee, et al.. (2005). Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate. IEEE Electron Device Letters. 26(2). 81–83. 83 indexed citations
8.
Low, Tony, M.F. Li, W. J. Fan, et al.. (2005). Impact of surface rouglmess on silicon and germanium ultra-thin-body MOSFETs. 151–154. 24 indexed citations
9.
Shen, Chen, M.F. Li, X.P. Wang, et al.. (2005). Negative U traps in HfO/sub 2/ gate dielectrics and frequency dependence of dynamic BTI in MOSFETs. 733–736. 45 indexed citations
10.
Xi, Yu, Chun Zhu, M.F. Li, et al.. (2004). Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO<tex>$_2$</tex>Gate Dielectric. IEEE Electron Device Letters. 25(7). 501–503. 22 indexed citations
11.
Yu, Decai, Chien‐Fu Cheng, K.T. Chan, et al.. (2004). Narrow-band band-pass filters on silicon substrates at 30 GHz. NPARC. 1. 1467–1470. 19 indexed citations
12.
Yu, H.Y., Jinfeng Kang, Chunyu Ren, et al.. (2004). Robust High-Quality HfN–>tex<$hbox HfO_2$>/tex<Gate Stack for Advanced MOS Device Applications. IEEE Electron Device Letters. 25(2). 70–72. 34 indexed citations
13.
Yu, H.Y., H.F. Lim, M.F. Li, et al.. (2004). Robust HfN metal gate electrode for advanced MOS devices application. 151–152. 3 indexed citations
14.
Yu, Decai, K.C. Chiang, Chien‐Fu Cheng, et al.. (2004). Fully Silicided NiSi:Hf–LaAlO<tex>$_3$</tex>/SG–GOI n-MOSFETs With High Electron Mobility. IEEE Electron Device Letters. 25(8). 559–561. 38 indexed citations
15.
Yu, Xiongfei, Chunxiang Zhu, X.P. Wang, et al.. (2004). High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric. 110–111. 16 indexed citations
16.
Chan, K.T., Albert Chin, Yue‐Der Lin, et al.. (2003). Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process. IEEE Microwave and Wireless Components Letters. 13(11). 487–489. 69 indexed citations
17.
Chan, K.T., Albert Chin, Jen-Tsai Kuo, et al.. (2003). Microwave coplanar filters on Si substrates. 3. 1909–1912. 5 indexed citations
18.
Yu, H.Y., H.F. Lim, M.F. Li, et al.. (2003). Physical and electrical characteristics of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters. 24(4). 230–232. 66 indexed citations
19.
20.
Yu, H.Y., Yunfei Hou, M.F. Li, & Dim‐Lee Kwong. (2002). Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters. 23(5). 285–287. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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