Toshio Hirao

830 citations

68 papers · 695 indexed · h-index 14

Instrumentation top 10%
- Advanced Optical Sensing Technologies 9
Electrical and Electronic Engineering top 10%
- Integrated Circuits and Semiconductor Failure Analysis 43
- Radiation Effects in Electronics 36
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 12
- Advancements in Semiconductor Devices and Circuit Design 9
- Electrostatic Discharge in Electronics 8
Hardware and Architecture top 10%
Computational Mechanics top 10%
- Ion-surface interactions and analysis 18
Radiation top 10%

Co-authors: Shinobu Onoda S. Kuboyama Jamie S. Laird Hisayoshi Itoh H. Ohyama Tomihiro Kamiya Takeshi Ohshima Takashi Tamura
Cited by: Instrumentation Electrical and Electronic Engineering Hardware and Architecture
Journals: Journal of Applied Physics (4 papers)Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (1 paper)Measurement Science and Technology (1 paper)
Partner nations: Japan United States Australia

In The Last Decade

Toshio Hirao

67 papers receiving 662 citations

Peers

Countries citing papers authored by Toshio Hirao

Since Specialization

Citations

This map shows the geographic impact of Toshio Hirao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshio Hirao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshio Hirao more than expected).

Fields of papers citing papers by Toshio Hirao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toshio Hirao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshio Hirao. The network helps show where Toshio Hirao may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Toshio Hirao, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Toshio Hirao Line = papers co-authored together Toshio Hirao links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs IEEE Transactions on Nuclear Science ·S. Kuboyama,Naomi Ikeda,Eiichi Mizuta,Hiroshi Abe,Toshio Hirao,Takashi Tamura	2012	5
2	Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs IEEE Transactions on Nuclear Science ·S. Kuboyama,Akifumi Maru,H. Shindou,Naomi Ikeda,Toshio Hirao,Hiroshi Abe,Takashi Tamura	2011	75
3	Difference of soft error rates in SOI SRAM induced by various high energy ion species Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Satoshi Abo,Naoyuki Masuda,Fujio Wakaya,T. Lohner,Shinobu Onoda,Takahiro Makino,Toshio Hirao,Takeshi Ohshima,T. Iwamatsu,H. Oda,Mikio Takai	2011	1
4	Quenching of impact ionization in heavy-ion induced electron-hole pair plasma tracks in wide bandwidth avalanche photodetectors Journal of Applied Physics ·Jamie S. Laird,Shinobu Onoda,Toshio Hirao,Larry D. Edmonds	2010	3
5	Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices Due to Radiations AIP conference proceedings ·Shinobu Onoda,Naoya Iwamoto,Toshio Hirao,Katsuyasu Kawano,Kazutoshi Kojima,Takeshi Ohshima,Floyd D. McDaniel,Barney L. Doyle	2009	2
6	Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV Materials science forum ·Shinobu Onoda,Naoya Iwamoto,Makoto Murakami,Takeshi Ohshima,Toshio Hirao,Kazutoshi Kojima,Katsuyasu Kawano,I. Nakano	2009	5
7	Heavy-ion induced current through an oxide layer Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Yoshihiro Takahashi,Takahiro Ohki,Takaharu Nagasawa,Y. Nakajima,Ryu Kawanabe,Kazunori Ohnishi,Toshio Hirao,Shinobu Onoda,Kenta Mishima,Katsuyasu Kawano,Hisayoshi Itoh	2007	4
8	Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons IEEE Transactions on Nuclear Science ·S. Kuboyama,Chihiro Kamezawa,Yohei Satoh,Toshio Hirao,H. Ohyama	2007	58
9	Evaluation of Transient Current in Si PIN Photodiode Induced by High-Energy Charged Particles Shinobu Onoda,Toshio Hirao,Hisayoshi Itoh,Tsuyoshi Okamoto	2006	4
10	Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode IEEE Transactions on Nuclear Science ·Jamie S. Laird,Shinobu Onoda,Toshio Hirao,Heidi N. Becker,Allan H. Johnston,Hisayoshi Itoh	2006	13
11	Radiation Damage of InGaAs Photodiodes by High-Temperature Electron and Neutron Irradiation ESA Special Publication ·H. Ohyama,Kenichiro Takakura,K. Hayama,Eddy Simoen,Cor Claeys,Toshio Hirao	2004	1
12	The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Jamie S. Laird,Toshio Hirao,Shinobu Onoda,Toshio Kamiya	2004	9
13	Temperature Dependence of Single-Event Transient Current Induced by Heavy Ion Microbeam on p+/n/n+ Epilayer Junctions ESA Special Publication ·Gang Guo,Toshio Hirao,Jamie S. Laird,Shinobu Onoda,Takeshi Wakasa,Takeshi Yamakawa,Tomihiro Kamiya	2003	4
14	Studies on single-event phenomena using the heavy-ion microbeam at JAERI Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Toshio Hirao,Hidenobu Mori,Jamie S. Laird,Shinobu Onoda,Takeshi Wakasa,Hiroshi Abe,Hisayoshi Itoh	2003	7
15	Comparison of the ion induced charge collection in Si epilayer and SOI devices Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Toshio Hirao,Hidenobu Mori,Jamie S. Laird,Shinobu Onoda,Hisayoshi Itoh	2003	2
16	Observation of transient current induced in silicon carbide diodes by ion irradiation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Takeshi Ohshima,Kin K. Lee,Shinobu Onoda,Tomihiro Kamiya,Masakazu Oikawa,Jamie S. Laird,Toshio Hirao,Hisayoshi Itoh	2003	7
17	A comparison of heavy ion and picosecond laser microbeams for investigating single event transients in InGaAs on InP photodetectors Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Jamie S. Laird,Toshio Hirao,Shinobu Onoda,Hidenobu Mori,Hisayoshi Itoh	2003	7
18	Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Toshio Hirao,Tsuyoshi Hamano,Takuro Sakai,I. Nashiyama	1999	9
19	Effect of ion position on single-event transient current Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Toshio Hirao,I. Nashiyama,Tomihiro Kamiya,Tamotsu Suda,Takuro Sakai,Tsuyoshi Hamano	1997	17
20	Accuracy of beam positioning in TIARA Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Tomihiro Kamiya,Takuro Sakai,Tsuyoshi Hamano,Tamotsu Suda,Toshio Hirao	1997	12

About Toshio Hirao

Toshio Hirao is a scholar working on Instrumentation, Nuclear Energy and Engineering and Electrical and Electronic Engineering, having authored 68 papers that have together received 695 indexed citations. Recurring topics across this work include Integrated Circuits and Semiconductor Failure Analysis (43 papers), Radiation Effects in Electronics (36 papers), Semiconductor materials and devices (21 papers), Ion-surface interactions and analysis (18 papers), Silicon Carbide Semiconductor Technologies (12 papers), Advanced Optical Sensing Technologies (9 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Electrostatic Discharge in Electronics (8 papers). The work is most often cited by research in Instrumentation (43 citations), Electrical and Electronic Engineering (627 citations) and Hardware and Architecture (56 citations). Toshio Hirao has collaborated with scholars based in Japan, United States and Australia. Frequent co-authors include Shinobu Onoda, S. Kuboyama, Jamie S. Laird, Hisayoshi Itoh, H. Ohyama, Tomihiro Kamiya, Takeshi Ohshima, Takashi Tamura, Hiroshi Abe and H. Shindou. Their work appears in journals such as Journal of Applied Physics, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment and Measurement Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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