Ishwara B. Bhat

948 total citations
53 papers, 761 citations indexed

About

Ishwara B. Bhat is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Ishwara B. Bhat has authored 53 papers receiving a total of 761 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in Ishwara B. Bhat's work include Advanced Semiconductor Detectors and Materials (21 papers), Chalcogenide Semiconductor Thin Films (19 papers) and Semiconductor Quantum Structures and Devices (14 papers). Ishwara B. Bhat is often cited by papers focused on Advanced Semiconductor Detectors and Materials (21 papers), Chalcogenide Semiconductor Thin Films (19 papers) and Semiconductor Quantum Structures and Devices (14 papers). Ishwara B. Bhat collaborates with scholars based in United States and China. Ishwara B. Bhat's co-authors include S. K. Ghandhi, N. R. Taskar, R. Dahal, Canhua Li, T. Paul Chow, G.-C. Wang, Toh‐Ming Lu, Yaron Danon, James Lu and Kuan‐Chih Huang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Ishwara B. Bhat

52 papers receiving 736 citations

Peers

Ishwara B. Bhat
M. Hempstead United Kingdom
B.K. Patnaik United States
J. Vaitkus Lithuania
H. Ohyama Japan
J. L. Shaw United States
John Mazurowski United States
K. Zhang Germany
C. Hor United States
M. Hempstead United Kingdom
Ishwara B. Bhat
Citations per year, relative to Ishwara B. Bhat Ishwara B. Bhat (= 1×) peers M. Hempstead

Countries citing papers authored by Ishwara B. Bhat

Since Specialization
Citations

This map shows the geographic impact of Ishwara B. Bhat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ishwara B. Bhat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ishwara B. Bhat more than expected).

Fields of papers citing papers by Ishwara B. Bhat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ishwara B. Bhat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ishwara B. Bhat. The network helps show where Ishwara B. Bhat may publish in the future.

Co-authorship network of co-authors of Ishwara B. Bhat

This figure shows the co-authorship network connecting the top 25 collaborators of Ishwara B. Bhat. A scholar is included among the top collaborators of Ishwara B. Bhat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ishwara B. Bhat. Ishwara B. Bhat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lu, James, et al.. (2017). Boron-10 nanoparticles filled silicon trenches for thermal neutron detection application. Applied Physics Letters. 110(19). 13 indexed citations
2.
Su, Pengyu, et al.. (2016). Effect of CdCl2 heat treatment on ZnTe back electron reflector layer in thin film CdTe solar cells. Solar Energy. 135. 209–214. 15 indexed citations
3.
Dahal, R., et al.. (2016). Low-Noise Preamplifier Design Considerations for Large Area High Capacitance Solid-State Neutron Detectors. IEEE Transactions on Nuclear Science. 63(1). 304–315. 2 indexed citations
4.
Huang, Kuan‐Chih, Mona M. Hella, R. Dahal, et al.. (2016). Low-cost fabrication of high efficiency solid-state neutron detectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9824. 982414–982414. 1 indexed citations
5.
Hitchcock, Collin, et al.. (2016). Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs. IEEE Electron Device Letters. 37(8). 1033–1036. 11 indexed citations
6.
Hitchcock, Collin, et al.. (2016). Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs. IEEE Transactions on Electron Devices. 64(3). 888–896. 21 indexed citations
7.
Dahal, R., et al.. (2016). Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films. Applied Physics Express. 9(6). 65801–65801. 19 indexed citations
8.
Banerjee, Sneha, R. Dahal, & Ishwara B. Bhat. (2015). A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe. Journal of Electronic Materials. 44(9). 3023–3029. 1 indexed citations
9.
Su, Pengyu, Chungho Lee, G.-C. Wang, Toh‐Ming Lu, & Ishwara B. Bhat. (2014). CdTe/ZnTe/GaAs Heterostructures for Single-Crystal CdTe Solar Cells. Journal of Electronic Materials. 43(8). 2895–2900. 24 indexed citations
10.
Danon, Yaron, et al.. (2010). Directional Response of Microstructure Solid State Thermal Neutron Detectors. Transactions of the American Nuclear Society. 103. 214–215. 6 indexed citations
11.
Danon, Yaron, et al.. (2009). OPTIMIZATION OF A NOVEL SOLID-STATE SELF POWERED NEUTRON DETECTOR. 6 indexed citations
12.
Danon, Yaron, et al.. (2008). A novel solid state self-powered neutron detector. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7079. 707908–707908. 12 indexed citations
13.
Sharma, Santosh Kumar, et al.. (2008). High-Voltage 4H-SiC Bipolar Junction Transistors With Epitaxial Regrowth of the Base Contact. IEEE Transactions on Electron Devices. 55(12). 3360–3366. 7 indexed citations
14.
Li, Canhua, T. Paul Chow, Ishwara B. Bhat, et al.. (2006). Characterization of Ti schottky diodes on epi-regrown 4H-SiC. Journal of Electronic Materials. 35(4). 754–757. 2 indexed citations
15.
Refaat, Tamer F., M. N. Abedin, Upendra N. Singh, et al.. (2004). Characterization of InGaSb detectors for 1.0- to 2.4-μm applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5406. 56–56. 1 indexed citations
16.
Bhat, Ishwara B., et al.. (2002). Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors. Journal of Applied Physics. 92(12). 7587–7592. 26 indexed citations
17.
Bhat, Ishwara B., et al.. (1994). Nitrogen doping of ZnSe by OMVPE using a novel organometallic precursor. Journal of Electronic Materials. 23(3). 259–262. 1 indexed citations
18.
Bhat, Ishwara B., N. R. Taskar, & S. K. Ghandhi. (1987). On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy. Journal of The Electrochemical Society. 134(1). 195–198. 40 indexed citations
19.
Bhat, Ishwara B., N. R. Taskar, & S. K. Ghandhi. (1986). The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2230–2233. 23 indexed citations
20.
Ghandhi, S. K., N. R. Taskar, & Ishwara B. Bhat. (1985). Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy. Applied Physics Letters. 47(7). 742–745. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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