Martin Guttmann

1.7k total citations
53 papers, 1.3k citations indexed

About

Martin Guttmann is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Martin Guttmann has authored 53 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Condensed Matter Physics, 38 papers in Electronic, Optical and Magnetic Materials and 24 papers in Materials Chemistry. Recurrent topics in Martin Guttmann's work include GaN-based semiconductor devices and materials (49 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (24 papers). Martin Guttmann is often cited by papers focused on GaN-based semiconductor devices and materials (49 papers), Ga2O3 and related materials (38 papers) and ZnO doping and properties (24 papers). Martin Guttmann collaborates with scholars based in Germany, Sweden and Italy. Martin Guttmann's co-authors include Michael Kneissl, Tim Wernicke, Frank Mehnke, Luca Sulmoni, M. Weyers, Christian Kühn, S. Einfeldt, Christoph Reich, Jens Raß and Norman Susilo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Martin Guttmann

48 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Martin Guttmann Germany 21 1.2k 831 516 470 306 53 1.3k
Jens Raß Germany 19 1.4k 1.1× 846 1.0× 612 1.2× 433 0.9× 394 1.3× 57 1.5k
Frank Mehnke Germany 25 1.6k 1.3× 1.0k 1.2× 681 1.3× 515 1.1× 462 1.5× 56 1.7k
Luca Sulmoni Germany 17 877 0.7× 480 0.6× 305 0.6× 313 0.7× 360 1.2× 43 1.0k
Norimichi Noguchi Japan 11 1.3k 1.1× 951 1.1× 586 1.1× 540 1.1× 238 0.8× 13 1.4k
V. Kueller Germany 19 1.5k 1.3× 982 1.2× 698 1.4× 517 1.1× 367 1.2× 35 1.6k
Christian Kühn Germany 18 1.1k 0.9× 734 0.9× 482 0.9× 382 0.8× 287 0.9× 36 1.2k
F. Omnès France 19 979 0.8× 752 0.9× 526 1.0× 339 0.7× 540 1.8× 27 1.3k
Maki Kushimoto Japan 18 1.1k 0.9× 564 0.7× 426 0.8× 375 0.8× 568 1.9× 58 1.4k
Sachie Fujikawa Japan 11 1.1k 1.0× 818 1.0× 542 1.1× 484 1.0× 262 0.9× 37 1.3k
Hernán Rodríguez Germany 8 778 0.6× 488 0.6× 370 0.7× 280 0.6× 217 0.7× 12 856

Countries citing papers authored by Martin Guttmann

Since Specialization
Citations

This map shows the geographic impact of Martin Guttmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Guttmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Guttmann more than expected).

Fields of papers citing papers by Martin Guttmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Guttmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Guttmann. The network helps show where Martin Guttmann may publish in the future.

Co-authorship network of co-authors of Martin Guttmann

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Guttmann. A scholar is included among the top collaborators of Martin Guttmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Guttmann. Martin Guttmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kolbe, Tim, Martin Guttmann, Sylvia Hagedorn, et al.. (2025). Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p ‐AlGaN‐Layers. physica status solidi (RRL) - Rapid Research Letters. 19(12).
2.
Raß, Jens, Martin Guttmann, Hyun Kyong Cho, et al.. (2025). Far-UVC micro-LED arrays for efficient light extraction and fiber coupling. Applied Physics Letters. 127(16).
3.
Hartmann, C., Martin Guttmann, Uta Juda, et al.. (2024). Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet‐C Light‐Emitting Diodes on Single‐Crystal AlN Substrates. physica status solidi (a). 222(8). 1 indexed citations
4.
Susilo, Norman, Martin Guttmann, Friedhard Römer, et al.. (2024). Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions. physica status solidi (a). 221(21). 3 indexed citations
5.
Guttmann, Martin, et al.. (2024). Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors. ACS Photonics. 11(8). 2923–2929. 3 indexed citations
6.
Enslin, Johannes, Martin Guttmann, Luca Sulmoni, et al.. (2023). Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing. ACS Photonics. 10(2). 368–373. 16 indexed citations
7.
Knauer, A., Tim Kolbe, Sylvia Hagedorn, et al.. (2023). Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates. Applied Physics Letters. 122(1). 23 indexed citations
8.
Piva, Francesco, Carlo De Santi, Matteo Buffolo, et al.. (2023). Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs. Applied Physics Letters. 122(15). 11 indexed citations
9.
Guttmann, Martin, Neysha Lobo‐Ploch, F. Gindele, et al.. (2022). Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin. Semiconductor Science and Technology. 37(6). 65019–65019. 3 indexed citations
10.
Guttmann, Martin, Neysha Lobo‐Ploch, Frank Mehnke, et al.. (2022). Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters. Journal of Physics D Applied Physics. 55(20). 205105–205105. 3 indexed citations
11.
Glaab, Johannes, Jan Ruschel, Hyun Kyong Cho, et al.. (2022). Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs. Journal of Applied Physics. 131(1). 21 indexed citations
12.
Mehnke, Frank, Christian Kühn, Martin Guttmann, et al.. (2021). Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232  nm. Photonics Research. 9(6). 1117–1117. 18 indexed citations
13.
Guttmann, Martin, et al.. (2021). Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs. Journal of Physics D Applied Physics. 54(33). 335101–335101. 28 indexed citations
14.
Guttmann, Martin, Christian Kühn, Norman Susilo, et al.. (2020). Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction. Applied Physics Letters. 117(25). 13 indexed citations
15.
Susilo, Norman, Sylvia Hagedorn, Carsten Netzel, et al.. (2020). Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire. Photonics Research. 8(4). 589–589. 62 indexed citations
16.
Sulmoni, Luca, Frank Mehnke, Anna Mogilatenko, et al.. (2020). Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers. Photonics Research. 8(8). 1381–1381. 50 indexed citations
17.
Kühn, Christian, Luca Sulmoni, Martin Guttmann, et al.. (2019). MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs. Photonics Research. 7(5). B7–B7. 46 indexed citations
18.
Guttmann, Martin, Christoph Reich, Luca Sulmoni, et al.. (2019). Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes. Semiconductor Science and Technology. 34(8). 85007–85007. 8 indexed citations
19.
Guttmann, Martin, Frank Mehnke, Christoph Reich, et al.. (2019). Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm. Japanese Journal of Applied Physics. 58(SC). SCCB20–SCCB20. 67 indexed citations
20.
Susilo, Norman, Johannes Enslin, Luca Sulmoni, et al.. (2017). Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs. physica status solidi (a). 215(10). 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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