F. Hitzel

828 total citations
28 papers, 699 citations indexed

About

F. Hitzel is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, F. Hitzel has authored 28 papers receiving a total of 699 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Condensed Matter Physics, 16 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electrical and Electronic Engineering. Recurrent topics in F. Hitzel's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor materials and devices (6 papers). F. Hitzel is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor materials and devices (6 papers). F. Hitzel collaborates with scholars based in Germany, United States and Italy. F. Hitzel's co-authors include A. Hangleiter, U. Rossów, Carsten Netzel, D. Fuhrmann, George Ade, P. Hinze, Nicholas Riedel, A. Bellucci, Matteo Mastellone and Valerio Serpente and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

F. Hitzel

24 papers receiving 668 citations

Peers

Countries citing papers authored by F. Hitzel

Since Specialization

Citations

This map shows the geographic impact of F. Hitzel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Hitzel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Hitzel more than expected).

Fields of papers citing papers by F. Hitzel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Hitzel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Hitzel. The network helps show where F. Hitzel may publish in the future.

Co-authorship network of co-authors of F. Hitzel

This figure shows the co-authorship network connecting the top 25 collaborators of F. Hitzel. A scholar is included among the top collaborators of F. Hitzel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Hitzel. F. Hitzel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	AFM-in-SEM for Precise Endpoint Delayering of SRAMs 2024 ·Proceedings - International Symposium for Testing and Failure Analysis ·G. Johnson, F. Hitzel	0
2	In-Situ Junction Analysis in SiC (and GaN) 2023 ·Proceedings - International Symposium for Testing and Failure Analysis ·G. Johnson, (unknown), Thomas Rodgers, F. Hitzel, Andreas Rummel, (unknown), Martin Kuball	0
3	Tomography of Electrical Data in Advanced-Node SRAMs 2023 ·Proceedings - International Symposium for Testing and Failure Analysis ·G. Johnson, F. Hitzel	0
4	Deep-Subwavelength 2D Periodic Surface Nanostructures on Diamond by Double-Pulse Femtosecond Laser Irradiation 2021 ·Nano Letters ·Matteo Mastellone, A. Bellucci, M. Girolami, Valerio Serpente, Riccardo Polini, S. Orlando, A. Santagata, Elisa Sani, F. Hitzel, D.M. Trucchi	73
5	In Situ Observation of Current Generation in ZnO Nanowire Based Nanogenerators Using a CAFM Integrated into an SEM 2019 ·ACS Applied Materials & Interfaces ·Chao Wen, Xu Jing, F. Hitzel, Chengbin Pan, Günther Benstetter, Mario Lanza	14
6	SPM—SEM Investigations of Semiconductor Nanowires for Integrated Metal Oxide Gas Sensors 2018 ·SHILAP Revista de lepidopterología ·(unknown), (unknown), F. Hitzel, (unknown), (unknown), (unknown), Anton Köck	2
7	Hybrid SEM/AFM System from Carl Zeiss Revolutionizes Analysis of Functional Micro- and Nanostructured Specimen 2014 ·Microscopy and Microanalysis ·(unknown), F. Hitzel, Fang Zhou, (unknown)	1
8	THE REASON FOR THE HIGH EMISSION EFFICIENCY OF GaInN/GaN BASED LEDS 2008 ·International Journal of Modern Physics B ·F. Hitzel, A. Hangleiter	1
9	Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells 2007 ·The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·A. Hangleiter, Carsten Netzel, D. Fuhrmann, F. Hitzel, Lars Hoffmann, H. Bremers, U. Rossów, George Ade, P. Hinze	21
10	Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency 2005 ·Physical Review Letters ·A. Hangleiter, F. Hitzel, Carsten Netzel, D. Fuhrmann, U. Rossów, George Ade, P. Hinze	343
11	Localized high-energy emissions from the vicinity of defects in high-efficiencyGaxIn1−xN∕GaNquantum wells 2005 ·Physical Review B ·F. Hitzel, (unknown), (unknown), U. Rossów, A. Hangleiter	36
12	Growth of Al _x Ga _{1− x} N and GaN on photo‐electrochemically patterned SiC substrates 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), U. Rossów, Nicholas Riedel, (unknown), F. Hitzel, A. Hangleiter	4
13	Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Carsten Netzel, (unknown), F. Hitzel, S. Miller, A. Weimar, G. Brüderl, H.‐J. Lugauer, A. Lell, V. Härle, A. Hangleiter	1
14	High resolution near‐field spectroscopy investigation of tilted InGaN quantum wells 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·F. Hitzel, (unknown), Nicholas Riedel, U. Rossów, A. Hangleiter	3
15	Composition dependence of polarization fields in GaInN/GaN quantum wells 2003 ·Applied Physics Letters ·A. Hangleiter, F. Hitzel, (unknown), U. Rossów	85
16	Dependence of electron effective mass on the subband occupation in In0.53Ga0.47As/InP quantum wells 2002 ·Physica E Low-dimensional Systems and Nanostructures ·(unknown), F. Hitzel, A. Schlachetzki, (unknown)	2
17	Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers 2002 ·Journal of Crystal Growth ·U. Rossów, F. Hitzel, Nicholas Riedel, (unknown), J. Bläsing, A. Krost, George Ade, P. Hinze, A. Hangleiter	7
18	Lateral growth of Al_xGa_1–xN and GaN on SiC substrates patterned by photo-electrochemical etching 2002 ·MRS Proceedings ·U. Rossów, Nicholas Riedel, F. Hitzel, Thomas Riedl, A. Hangleiter	1
19	Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs 2001 ·physica status solidi (b) ·F. Hitzel, A. Hangleiter, S. Bäder, H.‐J. Lugauer, (unknown)	3
20	Growth of SiC on Si(100) by Low-Pressure MOVPE 2001 ·Materials science forum ·A. Bakin, A. A. Ivanov, (unknown), Thomas Riedl, F. Hitzel, (unknown), A. Schlachetzki	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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