Veit Hoffmann

702 total citations
44 papers, 585 citations indexed

About

Veit Hoffmann is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Veit Hoffmann has authored 44 papers receiving a total of 585 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Condensed Matter Physics, 24 papers in Electrical and Electronic Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Veit Hoffmann's work include GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (22 papers) and Ga2O3 and related materials (13 papers). Veit Hoffmann is often cited by papers focused on GaN-based semiconductor devices and materials (40 papers), Semiconductor Quantum Structures and Devices (22 papers) and Ga2O3 and related materials (13 papers). Veit Hoffmann collaborates with scholars based in Germany, Poland and Portugal. Veit Hoffmann's co-authors include M. Weyers, Michael Kneissl, A. Knauer, Tim Wernicke, Carsten Netzel, S. Einfeldt, Simon Ploch, Ulrich T. Schwarz, Jens Raß and Lukas Schade and has published in prestigious journals such as Journal of Applied Physics, Optics Letters and Journal of Physics D Applied Physics.

In The Last Decade

Veit Hoffmann

42 papers receiving 554 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Veit Hoffmann Germany 14 441 273 235 222 197 44 585
Kensaku Motoki Japan 6 559 1.3× 245 0.9× 160 0.7× 257 1.2× 284 1.4× 6 603
L. Considine Ireland 12 316 0.7× 344 1.3× 282 1.2× 270 1.2× 159 0.8× 40 638
Ryuji Katayama Japan 14 628 1.4× 357 1.3× 421 1.8× 288 1.3× 264 1.3× 129 808
Kikurou Takemoto Japan 12 600 1.4× 269 1.0× 178 0.8× 326 1.5× 337 1.7× 22 681
Koji Uematsu Japan 5 506 1.1× 214 0.8× 151 0.6× 238 1.1× 274 1.4× 5 547
P. M. Bridger United States 11 453 1.0× 378 1.4× 281 1.2× 165 0.7× 174 0.9× 17 645
J. Mickevičius Lithuania 17 661 1.5× 229 0.8× 306 1.3× 377 1.7× 382 1.9× 79 808
Takuji Okahisa Japan 7 644 1.5× 249 0.9× 223 0.9× 301 1.4× 335 1.7× 8 686
John F. Kaeding United States 11 608 1.4× 175 0.6× 281 1.2× 240 1.1× 229 1.2× 12 649
Ho Ki Kwon South Korea 15 407 0.9× 314 1.2× 205 0.9× 202 0.9× 189 1.0× 33 579

Countries citing papers authored by Veit Hoffmann

Since Specialization
Citations

This map shows the geographic impact of Veit Hoffmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Veit Hoffmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Veit Hoffmann more than expected).

Fields of papers citing papers by Veit Hoffmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Veit Hoffmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Veit Hoffmann. The network helps show where Veit Hoffmann may publish in the future.

Co-authorship network of co-authors of Veit Hoffmann

This figure shows the co-authorship network connecting the top 25 collaborators of Veit Hoffmann. A scholar is included among the top collaborators of Veit Hoffmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Veit Hoffmann. Veit Hoffmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Kang, Ji Hye, H. Wenzel, Veit Hoffmann, et al.. (2022). Continuous-wave operation of 405  nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings. Photonics Research. 10(5). 1157–1157. 7 indexed citations
3.
Kang, Ji Hye, H. Wenzel, Veit Hoffmann, et al.. (2020). Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings. Optics Letters. 45(4). 935–935. 14 indexed citations
4.
Mahler, F, Jens W. Tomm, K. Reimann, et al.. (2019). Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability. Journal of Applied Physics. 125(18). 5 indexed citations
5.
Kang, Ji Hye, H. Wenzel, Veit Hoffmann, et al.. (2018). 10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings. 7–7. 3 indexed citations
6.
Sédrine, N. Ben, J. Rodrigues, A.J. Neves, et al.. (2018). Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites. ACS Applied Nano Materials. 1(8). 3845–3858. 12 indexed citations
7.
Ding, Li, Veit Hoffmann, E. Richter, et al.. (2017). MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates. Journal of Crystal Growth. 478. 212–215. 19 indexed citations
8.
Koslow, Ingrid, et al.. (2015). Impact of acceptor concentration on the resistivity of Ni/Au p‐contacts on semipolar (20–21) GaN:Mg. physica status solidi (b). 253(1). 169–173. 8 indexed citations
9.
Friedrich, Christian, et al.. (2012). Preparation and atomic structure of reconstructed (0001) InGaN surfaces. Journal of Applied Physics. 112(3). 4 indexed citations
10.
Wernicke, Tim, Simon Ploch, Veit Hoffmann, et al.. (2011). Surface morphology of homoepitaxial GaN grown on non‐ and semipolar GaN substrates. physica status solidi (b). 248(3). 574–577. 29 indexed citations
11.
Sánchez, E., et al.. (2011). Evaluation of Performance of Standard and Umg Multicrystalline Silicon Modules in Outdoor Conditions. EU PVSEC. 3657–3660. 1 indexed citations
12.
Netzel, Carsten, Veit Hoffmann, Tim Wernicke, et al.. (2011). GaInN quantum well design and measurement conditions affecting the emission energy S‐shape. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2151–2153. 6 indexed citations
13.
Hoffmann, Veit, Carsten Netzel, U. Zeimer, et al.. (2010). Well width study of InGaN multiple quantum wells for blue–green emitter. Journal of Crystal Growth. 312(23). 3428–3433. 10 indexed citations
14.
Hoffmann, Veit, A. Knauer, S. Einfeldt, et al.. (2010). Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate. Journal of Crystal Growth. 315(1). 5–9. 27 indexed citations
15.
Zeimer, U., U. Jahn, Veit Hoffmann, M. Weyers, & Michael Kneissl. (2010). Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies. Journal of Electronic Materials. 39(6). 677–683. 5 indexed citations
16.
Einfeldt, S., Olaf Krüger, Veit Hoffmann, et al.. (2010). Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates. IEEE Photonics Technology Letters. 22(6). 416–418. 23 indexed citations
17.
Netzel, Carsten, J. Škriniarová, H. Wenzel, et al.. (2009). Experimental method for scanning the surface depletion region in nitride based heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 2 indexed citations
18.
Hoffmann, Veit, et al.. (2008). First Results on Industrialization of Elkem Solar Silicon at Pillar JSC and Q-Cells. EU PVSEC. 1117–1120. 12 indexed citations
19.
Wellmann, Peter J., et al.. (2007). Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching. Journal of Crystal Growth. 310(5). 955–958. 13 indexed citations
20.
Knauer, A., V. Kueller, S. Einfeldt, et al.. (2007). Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6797. 67970X–67970X. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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