J. Off

1.9k total citations · 1 hit paper
55 papers, 1.6k citations indexed

About

J. Off is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Off has authored 55 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Condensed Matter Physics, 22 papers in Atomic and Molecular Physics, and Optics and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Off's work include GaN-based semiconductor devices and materials (53 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (20 papers). J. Off is often cited by papers focused on GaN-based semiconductor devices and materials (53 papers), Semiconductor Quantum Structures and Devices (21 papers) and Ga2O3 and related materials (20 papers). J. Off collaborates with scholars based in Germany, United States and France. J. Off's co-authors include F. Scholz, A. Hangleiter, Jin Seo Im, H. Kollmer, A. Sohmer, F. Binet, J.-Y. Duboz, M. Schubert, G. Bacher and A. Forchel and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. Off

54 papers receiving 1.6k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

1998 545 citations Jin Seo Im, J. Off et al. Physical review. B, Condensed matter profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
J. Off	1.4k	802	611	599	412	55	1.6k
B. Goldenberg	1.4k 1.0×	740 0.9×	695 1.1×	671 1.1×	507 1.2×	31	1.6k
H. Marchand	1.6k 1.1×	621 0.8×	818 1.3×	803 1.3×	798 1.9×	37	1.9k
Norikatsu Koide	1.4k 1.0×	480 0.6×	615 1.0×	685 1.1×	538 1.3×	28	1.5k
M. S. Minsky	1.3k 0.9×	705 0.9×	619 1.0×	567 0.9×	410 1.0×	18	1.5k
Carsten Netzel	1.3k 0.9×	552 0.7×	662 1.1×	699 1.2×	407 1.0×	57	1.5k
H. M. Ng	1.3k 0.9×	675 0.8×	738 1.2×	800 1.3×	729 1.8×	47	1.8k
E. Iliopoulos	1.5k 1.0×	530 0.7×	823 1.3×	819 1.4×	622 1.5×	86	1.9k
C. J. Sun	1.4k 0.9×	516 0.6×	666 1.1×	592 1.0×	591 1.4×	38	1.6k
E. Born	882 0.6×	441 0.5×	437 0.7×	648 1.1×	519 1.3×	24	1.5k
Michael D. Craven	2.0k 1.4×	722 0.9×	929 1.5×	1.1k 1.8×	633 1.5×	35	2.2k

Countries citing papers authored by J. Off

Since Specialization

Citations

This map shows the geographic impact of J. Off's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Off with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Off more than expected).

Fields of papers citing papers by J. Off

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Off. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Off. The network helps show where J. Off may publish in the future.

Co-authorship network of co-authors of J. Off

This figure shows the co-authorship network connecting the top 25 collaborators of J. Off. A scholar is included among the top collaborators of J. Off based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Off. J. Off is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Meißner, Elke, B. Birkmann, J. Off, et al.. (2006). Morphology and microstructure of a ‐plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG). physica status solidi (a). 203(7). 1676–1680. 3 indexed citations

Schömig, H., S. Halm, A. Forchel, et al.. (2004). Probing Individual Localization Centers in anInGaN/GaNQuantum Well. Physical Review Letters. 92(10). 106802–106802. 128 indexed citations

Off, J., et al.. (2002). Complex spectral behaviour of the waveguide modes in GaInN/GaN laser structures. 11–12. 1 indexed citations

Kasic, A., M. Schubert, B. Rheinländer, et al.. (2002). Optical properties of Al/sub 1-x/In/sub x/N thin films determined by spectroscopic ellipsometry. 58. 513–518. 1 indexed citations

Kobayashi, Yasuyuki, J. Off, Barbara Kühn, et al.. (2002). Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 243(1). 103–107. 15 indexed citations

Kasic, A., M. Schubert, B. Rheinländer, et al.. (2001). Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements. Materials Science and Engineering B. 82(1-3). 74–76. 9 indexed citations

Görgens, L., O. Ambacher, M. Stutzmann, et al.. (2000). Characterization of InGaN thin films using high-resolution x-ray diffraction. Applied Physics Letters. 76(5). 577–579. 46 indexed citations

Kasic, A., M. Schubert, B. Rheinländer, et al.. (2000). IR-VUV Dielectric Function of Al_1−xIn_xN determined by Spectroscopic Ellipsometry. MRS Proceedings. 639. 1 indexed citations

Hangleiter, A., Jin Seo Im, J. Off, & F. Scholz. (1999). Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects. physica status solidi (b). 216(1). 427–430. 38 indexed citations

10.

Binet, F., J.-Y. Duboz, J. Off, & F. Scholz. (1999). High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition. Physical review. B, Condensed matter. 60(7). 4715–4722. 89 indexed citations

11.

Scholz, F., et al.. (1999). Influence of strain and buffer layer type on In incorporation during GaInN MOVPE. Materials Science and Engineering B. 59(1-3). 268–273. 15 indexed citations

12.

Off, J., et al.. (1999). Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures. physica status solidi (b). 216(1). 529–532. 6 indexed citations

13.

Hofmann, Richard, et al.. (1999). Optically pumped GaInN/GaN-DFB lasers: overgrown lasers and vertical modes. Materials Science and Engineering B. 59(1-3). 386–389. 5 indexed citations

14.

Off, J., et al.. (1998). Influence of buffer layers on the In-content of GaInN layers. Journal of Crystal Growth. 195(1-4). 286–290. 7 indexed citations

15.

Scholz, F., et al.. (1998). Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN. Materials science forum. 264-268. 1351–1354. 1 indexed citations

16.

Im, Jin Seo, J. Off, A. Sohmer, F. Scholz, & A. Hangleiter. (1998). Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells. Materials science forum. 264-268. 1299–1302. 4 indexed citations

17.

Lakner, Hubert, et al.. (1997). Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy. Journal of Electronic Materials. 26(10). 1103–1108. 11 indexed citations

18.

Sohmer, A., J. Off, V. Härle, et al.. (1997). GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 2. 26 indexed citations

19.

Scholz, F., A. Sohmer, J. Off, et al.. (1997). In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells. Materials Science and Engineering B. 50(1-3). 238–244. 27 indexed citations

20.

Duboz, J.-Y., F. Binet, Daniel Dolfi, et al.. (1997). Diffusion length of photoexcited carriers in GaN. Materials Science and Engineering B. 50(1-3). 289–295. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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