Jens Raß

1.8k total citations · 1 hit paper
57 papers, 1.5k citations indexed

About

Jens Raß is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Jens Raß has authored 57 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Condensed Matter Physics, 32 papers in Electronic, Optical and Magnetic Materials and 20 papers in Electrical and Electronic Engineering. Recurrent topics in Jens Raß's work include GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (31 papers) and ZnO doping and properties (15 papers). Jens Raß is often cited by papers focused on GaN-based semiconductor devices and materials (50 papers), Ga2O3 and related materials (31 papers) and ZnO doping and properties (15 papers). Jens Raß collaborates with scholars based in Germany, Italy and Switzerland. Jens Raß's co-authors include Michael Kneissl, Tim Wernicke, M. Weyers, S. Einfeldt, A. Knauer, Frank Mehnke, Tim Kolbe, Christian Kühn, Martin Guttmann and Johannes Glaab and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Jens Raß

52 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

III-Nitride Ultraviolet Emitters

2015 316 citations Michael Kneissl, Jens Raß profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jens Raß Germany	19	1.4k	846	612	433	394	57	1.5k
V. Kueller Germany	19	1.5k 1.1×	982 1.2×	698 1.1×	517 1.2×	367 0.9×	35	1.6k
Frank Mehnke Germany	25	1.6k 1.2×	1.0k 1.2×	681 1.1×	515 1.2×	462 1.2×	56	1.7k
Martin Guttmann Germany	21	1.2k 0.9×	831 1.0×	516 0.8×	470 1.1×	306 0.8×	53	1.3k
Christian Kühn Germany	18	1.1k 0.8×	734 0.9×	482 0.8×	382 0.9×	287 0.7×	36	1.2k
V. N. Jmerik Russia	19	1.1k 0.8×	696 0.8×	524 0.9×	380 0.9×	287 0.7×	111	1.2k
C. J. Eiting United States	21	1.1k 0.8×	679 0.8×	495 0.8×	312 0.7×	600 1.5×	50	1.5k
F. Omnès France	19	979 0.7×	752 0.9×	526 0.9×	339 0.8×	540 1.4×	27	1.3k
R. Averbeck Germany	19	1.2k 0.9×	596 0.7×	617 1.0×	303 0.7×	538 1.4×	39	1.5k
Mathew C. Schmidt United States	18	1.2k 0.9×	426 0.5×	548 0.9×	262 0.6×	385 1.0×	34	1.3k
Éric Frayssinet France	22	1.3k 0.9×	647 0.8×	619 1.0×	334 0.8×	778 2.0×	129	1.7k

Countries citing papers authored by Jens Raß

Since Specialization

Citations

This map shows the geographic impact of Jens Raß's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jens Raß with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jens Raß more than expected).

Fields of papers citing papers by Jens Raß

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jens Raß. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jens Raß. The network helps show where Jens Raß may publish in the future.

Co-authorship network of co-authors of Jens Raß

This figure shows the co-authorship network connecting the top 25 collaborators of Jens Raß. A scholar is included among the top collaborators of Jens Raß based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jens Raß. Jens Raß is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kolbe, Tim, Martin Guttmann, Sylvia Hagedorn, et al.. (2025). Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p ‐AlGaN‐Layers. physica status solidi (RRL) - Rapid Research Letters. 19(12).

Ruschel, Jan, et al.. (2025). Effect of quantum well number on the efficiency and degradation of AlGaN-based far-UVC LEDs emitting at 233 nm and 226 nm. Semiconductor Science and Technology. 40(4). 45004–45004. 1 indexed citations

Raß, Jens, Martin Guttmann, Hyun Kyong Cho, et al.. (2025). Far-UVC micro-LED arrays for efficient light extraction and fiber coupling. Applied Physics Letters. 127(16).

Ruschel, Jan, Francesco Piva, Matteo Buffolo, et al.. (2025). Efficiency- and lifetime-limiting effects of commercially available UVC LEDs: a review. Journal of Physics Photonics. 7(3). 32002–32002.

Kolbe, Tim, Hyun Kyong Cho, Sylvia Hagedorn, et al.. (2024). 226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW. physica status solidi (RRL) - Rapid Research Letters. 18(11). 4 indexed citations

Susilo, Norman, Jan Ruschel, Hyun Kyong Cho, et al.. (2024). Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm. physica status solidi (a). 221(23). 3 indexed citations

Cho, Hyun Kyong, et al.. (2024). Au-free V/Al/Pt Contacts on n-Al_0.85Ga_0.15N:Si Surfaces of Far-UVC LEDs. ECS Journal of Solid State Science and Technology. 13(9). 93009–93009. 1 indexed citations

Ruschel, Jan, Jens W. Tomm, Johannes Glaab, et al.. (2023). Spatially resolved degradation effects in UVB LEDs stressed by constant current operation. Applied Physics Letters. 122(13). 5 indexed citations

Kolbe, Tim, A. Knauer, Jens Raß, et al.. (2023). 234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer. Applied Physics Letters. 122(19). 24 indexed citations

10.

Gupta, Priti, Martin Guttmann, Jan Ruschel, et al.. (2023). Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs. Applied Physics Letters. 122(15). 7 indexed citations

11.

Raß, Jens, Hyun Kyong Cho, Martin Guttmann, et al.. (2023). Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design. Applied Physics Letters. 122(26). 25 indexed citations

12.

Guttmann, Martin, Neysha Lobo‐Ploch, F. Gindele, et al.. (2022). Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin. Semiconductor Science and Technology. 37(6). 65019–65019. 3 indexed citations

13.

Guttmann, Martin, Norman Susilo, Luca Sulmoni, et al.. (2022). Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities. physica status solidi (a). 220(16). 14 indexed citations

14.

Susilo, Norman, Sylvia Hagedorn, Carsten Netzel, et al.. (2020). Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire. Photonics Research. 8(4). 589–589. 62 indexed citations

15.

Santi, Carlo De, Francesco Piva, Johannes Glaab, et al.. (2019). High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes. IEEE Transactions on Electron Devices. 66(8). 3387–3392. 26 indexed citations

16.

Ruschel, Jan, Johannes Glaab, Neysha Lobo‐Ploch, et al.. (2019). Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes. Photonics Research. 7(7). B36–B36. 53 indexed citations

17.

Cho, Hyun Kyong, Neysha Lobo‐Ploch, Jens Raß, et al.. (2018). Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning. IEEE Photonics Technology Letters. 30(20). 1792–1794. 4 indexed citations

18.

Meneghini, Matteo, Carlo De Santi, Gaudenzio Meneghesso, et al.. (2016). Defect-Related Degradation of AlGaN-Based UV-B LEDs. IEEE Transactions on Electron Devices. 64(1). 200–205. 65 indexed citations

19.

Glaab, Johannes, Mickael Lapeyrade, Neysha Lobo‐Ploch, et al.. (2015). Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs. MRS Proceedings. 1792. 6 indexed citations

20.

Orlic, Susanna, et al.. (2009). Volumetric optical storage with microholograms. 1–3. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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