Sebastian Walde

545 total citations
19 papers, 417 citations indexed

About

Sebastian Walde is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Sebastian Walde has authored 19 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 11 papers in Electronic, Optical and Magnetic Materials and 9 papers in Materials Chemistry. Recurrent topics in Sebastian Walde's work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (8 papers). Sebastian Walde is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (11 papers) and ZnO doping and properties (8 papers). Sebastian Walde collaborates with scholars based in Germany, Taiwan and United States. Sebastian Walde's co-authors include Sylvia Hagedorn, M. Weyers, Anna Mogilatenko, Carsten Netzel, Michael Kneissl, Tim Wernicke, Norman Susilo, M. Albrecht, C. Hartmann and Neysha Lobo‐Ploch and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

Sebastian Walde

19 papers receiving 404 citations

Peers

Sebastian Walde

CMP

EOMM

EEE

Takuya Mino Japan

Shiro Toyoda Japan

Tetsuhiko Inazu Japan

L. E. Rodak United States

Liegen Huang China

Yingdong Tian China

Ah Hyun Park South Korea

Takehiko Fujita Japan

Jun Norimatsu Japan

Takuya Mino Japan

Sebastian Walde

489 ×1.3

CMP

369 ×1.6

EOMM

236 ×1.3

186 ×1.1

101 ×1.1

EEE

Citations per year, relative to Sebastian Walde Sebastian Walde (= 1×) peers Takuya Mino

Countries citing papers authored by Sebastian Walde

Since Specialization

Citations

This map shows the geographic impact of Sebastian Walde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sebastian Walde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sebastian Walde more than expected).

Fields of papers citing papers by Sebastian Walde

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sebastian Walde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sebastian Walde. The network helps show where Sebastian Walde may publish in the future.

Co-authorship network of co-authors of Sebastian Walde

This figure shows the co-authorship network connecting the top 25 collaborators of Sebastian Walde. A scholar is included among the top collaborators of Sebastian Walde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sebastian Walde. Sebastian Walde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

Winkelmann, Aimo, B. Hourahine, Feng Peng, et al.. (2023). Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction. Microscopy and Microanalysis. 29(6). 1879–1888. 2 indexed citations

Hagedorn, Sylvia, et al.. (2022). Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing. Journal of Applied Physics. 131(21). 6 indexed citations

Huang, Chia‐Yen, et al.. (2022). The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy. Journal of Crystal Growth. 600. 126910–126910. 3 indexed citations

Mogilatenko, Anna, Sebastian Walde, Sylvia Hagedorn, et al.. (2022). Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers. Journal of Applied Physics. 131(4). 13 indexed citations

Walde, Sebastian, Sylvia Hagedorn, Hung‐Wei Yen, et al.. (2022). High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes. Acta Materialia. 226. 117625–117625. 20 indexed citations

Markurt, T., Tobias Schulz, M. Albrecht, et al.. (2021). Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing. Journal of Applied Physics. 130(20). 17 indexed citations

Hagedorn, Sylvia, et al.. (2021). High‐Temperature Annealing and Patterned AlN/Sapphire Interfaces. physica status solidi (b). 258(10). 20 indexed citations

Kneissl, Michael, Johannes Enslin, Martin Guttmann, et al.. (2021). Advances towards deep-UV light emitting diode technologies. 1–1. 2 indexed citations

Ruschel, Jan, Johannes Glaab, Norman Susilo, et al.. (2020). Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities. Applied Physics Letters. 117(24). 42 indexed citations

10.

Susilo, Norman, Sylvia Hagedorn, Carsten Netzel, et al.. (2020). Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire. Photonics Research. 8(4). 589–589. 62 indexed citations

11.

Hagedorn, Sylvia, Sebastian Walde, A. Knauer, et al.. (2020). Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes. physica status solidi (a). 217(14). 46 indexed citations

12.

Huang, Chia‐Yen, Sebastian Walde, Carsten Netzel, et al.. (2020). Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates. Japanese Journal of Applied Physics. 59(7). 70904–70904. 21 indexed citations

13.

Hagedorn, Sylvia, Taimoor Khan, Carsten Netzel, et al.. (2020). High‐Temperature Annealing of AlGaN. physica status solidi (a). 217(23). 11 indexed citations

14.

Hagedorn, Sylvia, Sebastian Walde, Norman Susilo, et al.. (2020). Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes. physica status solidi (a). 217(7). 19 indexed citations

15.

Knauer, A., Anna Mogilatenko, Sylvia Hagedorn, et al.. (2020). The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures. Crystal Research and Technology. 55(9). 8 indexed citations

16.

Coulon, Pierre‐Marie, B. Damilano, Blandine Alloing, et al.. (2019). Displacement Talbot lithography for nano-engineering of III-nitride materials. Microsystems & Nanoengineering. 5(1). 52–52. 36 indexed citations

17.

Hagedorn, Sylvia, Sebastian Walde, Anna Mogilatenko, et al.. (2019). Stabilization of sputtered AlN/sapphire templates during high temperature annealing. Journal of Crystal Growth. 512. 142–146. 42 indexed citations

18.

Walde, Sebastian, Sylvia Hagedorn, & M. Weyers. (2019). Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 58(SC). SC1002–SC1002. 32 indexed citations

19.

Walde, Sebastian, Moritz Brendel, U. Zeimer, et al.. (2017). Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors. Journal of Applied Physics. 123(16). 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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