A. Hangleiter

6.5k total citations · 1 hit paper
233 papers, 5.2k citations indexed

About

A. Hangleiter is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, A. Hangleiter has authored 233 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 155 papers in Atomic and Molecular Physics, and Optics, 138 papers in Condensed Matter Physics and 128 papers in Electrical and Electronic Engineering. Recurrent topics in A. Hangleiter's work include Semiconductor Quantum Structures and Devices (142 papers), GaN-based semiconductor devices and materials (137 papers) and Ga2O3 and related materials (50 papers). A. Hangleiter is often cited by papers focused on Semiconductor Quantum Structures and Devices (142 papers), GaN-based semiconductor devices and materials (137 papers) and Ga2O3 and related materials (50 papers). A. Hangleiter collaborates with scholars based in Germany, France and United States. A. Hangleiter's co-authors include F. Scholz, U. Rossów, Jin Seo Im, J. Off, H. Kollmer, H. Bremers, V. Härle, D. Fuhrmann, A. Sohmer and F. Hitzel and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A. Hangleiter

228 papers receiving 5.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

1998 545 citations Jin Seo Im, J. Off et al. profile →

Peers

Countries citing papers authored by A. Hangleiter

Since Specialization

Citations

This map shows the geographic impact of A. Hangleiter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Hangleiter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Hangleiter more than expected).

Fields of papers citing papers by A. Hangleiter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Hangleiter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Hangleiter. The network helps show where A. Hangleiter may publish in the future.

Co-authorship network of co-authors of A. Hangleiter

This figure shows the co-authorship network connecting the top 25 collaborators of A. Hangleiter. A scholar is included among the top collaborators of A. Hangleiter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Hangleiter. A. Hangleiter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures 2024 ·AIP Advances ·(unknown), (unknown), (unknown), H. Bremers, U. Rossów, A. Hangleiter	4
2	Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers 2019 ·Applied Physics Letters ·(unknown), (unknown), H. Bremers, U. Rossów, (unknown), P. Vennéguès, P. de Mierry, J. Zúñiga‐Pérez, A. Hangleiter	5
3	Recombination dynamics in GaInN/GaN quantum wells 2019 ·Semiconductor Science and Technology ·A. Hangleiter	12
4	Reduced radiative emission for wide nonpolar III-nitride quantum wells 2019 ·Physical review. B. ·(unknown), (unknown), H. Bremers, U. Rossów, A. Hangleiter	3
5	Internal quantum efficiency of nitride light emitters: a critical perspective 2018 ·A. Hangleiter, Torsten Langer, (unknown), (unknown), H. Bremers, U. Rossów	9
6	Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells 2015 ·physica status solidi (b) ·Torsten Langer, (unknown), (unknown), H. Jönen, H. Bremers, U. Rossów, Tobias Meisch, F. Scholz, A. Hangleiter	19
7	Auger recombination in GaInN/GaN quantum well laser structures 2011 ·Applied Physics Letters ·Moritz Brendel, (unknown), H. Jönen, Lars Hoffmann, H. Bremers, U. Rossów, A. Hangleiter	54
8	Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency 2005 ·Physical Review Letters ·A. Hangleiter, F. Hitzel, Carsten Netzel, D. Fuhrmann, U. Rossów, George Ade, P. Hinze	343
9	Localized high-energy emissions from the vicinity of defects in high-efficiencyGaxIn1−xN∕GaNquantum wells 2005 ·Physical Review B ·F. Hitzel, (unknown), (unknown), U. Rossów, A. Hangleiter	36
10	Complex spectral behaviour of the waveguide modes in GaInN/GaN laser structures 2002 ·(unknown), J. Off, F. Scholz, A. Hangleiter	1
11	Investigations on the V-Defect Formation in GaInN-GaN Multi Quantum Well Structures 1999 ·physica status solidi (b) ·J. Off, F. Scholz, (unknown), (unknown), A. Hangleiter, (unknown), Hubert Lakner	6
12	Valence-band splitting and band-gap reduction in ordered GaInAs/InP 1998 ·Journal of Applied Physics ·R. Wirth, (unknown), M. Geiger, (unknown), F. Scholz, A. Hangleiter	8
13	Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells 1998 ·Materials science forum ·Jin Seo Im, J. Off, A. Sohmer, F. Scholz, A. Hangleiter	4
14	Ordering in GaInP: epitaxy, basic characteristics and device relevance 1997 ·III-Vs Review ·F. Scholz, A. Hangleiter, H. Schweizer, M. H. Pilkuhn	2
15	Investigation of strain effects in selectively grown GaAs on Si 1994 ·Journal of Crystal Growth ·(unknown), P. Stauß, (unknown), A. Hangleiter, F. Scholz, J. Spitzer	3
16	Selective area epitaxy of GaInAs using conventional and novel group III precursors 1994 ·Journal of Crystal Growth ·F. Scholz, (unknown), (unknown), (unknown), (unknown), (unknown), A. Hangleiter	19
17	Damping of the relaxation resonance in multiple-quantum-well lasers by slow interwell transport 1993 ·Applied Physics Letters ·A. Hangleiter, Anton Grabmaier, Gregory D. Fuchs	21
18	Experimental evidence for charge-transfer excitation of Yb in InP 1993 ·Applied Physics Letters ·(unknown), J. Weber, F. Scholz, A. Hangleiter	8
19	Non-equilibrium generation-recombination noise in InGaAs/InP photodiodes 1992 ·Applied Physics A ·(unknown), A. Hangleiter, (unknown), (unknown)	1
20	Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures 1990 ·Superlattices and Microstructures ·(unknown), (unknown), A. Hangleiter, V. Härle, K. Streubel, F. Scholz	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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