N. Zainal

605 total citations
73 papers, 484 citations indexed

About

N. Zainal is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, N. Zainal has authored 73 papers receiving a total of 484 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Condensed Matter Physics, 42 papers in Electronic, Optical and Magnetic Materials and 38 papers in Materials Chemistry. Recurrent topics in N. Zainal's work include GaN-based semiconductor devices and materials (63 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (35 papers). N. Zainal is often cited by papers focused on GaN-based semiconductor devices and materials (63 papers), Ga2O3 and related materials (42 papers) and ZnO doping and properties (35 papers). N. Zainal collaborates with scholars based in Malaysia, United Kingdom and United States. N. Zainal's co-authors include Z. Hassan, F.K. Yam, A. J. Kent, С. В. Новиков, А. В. Акимов, Hock Jin Quah, C. R. Staddon, C. T. Foxon, Way Foong Lim and Ahmad Shuhaimi Abu Bakar and has published in prestigious journals such as Applied Physics Letters, Journal of the American Ceramic Society and Journal of Materials Science.

In The Last Decade

N. Zainal

67 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. Zainal Malaysia	13	314	236	206	190	119	73	484
Takao Oto Japan	11	374 1.2×	201 0.9×	153 0.7×	180 0.9×	121 1.0×	27	481
Hao-Chung Kuo Taiwan	12	230 0.7×	146 0.6×	143 0.7×	111 0.6×	134 1.1×	27	356
Casey M. Schwarz United States	10	76 0.2×	192 0.8×	179 0.9×	103 0.5×	73 0.6×	29	345
Emre Ergeçen United States	7	106 0.3×	348 1.5×	197 1.0×	233 1.2×	193 1.6×	9	601
Binghui Li China	6	103 0.3×	229 1.0×	137 0.7×	199 1.0×	97 0.8×	14	396
Jaesoong Lee South Korea	9	168 0.5×	164 0.7×	118 0.6×	117 0.6×	69 0.6×	13	330
Shafat Jahangir United States	14	488 1.6×	292 1.2×	215 1.0×	226 1.2×	315 2.6×	35	678
Ting‐Wei Yeh United States	9	307 1.0×	321 1.4×	230 1.1×	185 1.0×	191 1.6×	13	602
Guan-Bo Lin United States	13	472 1.5×	192 0.8×	194 0.9×	173 0.9×	300 2.5×	18	546
H. M. Lo Taiwan	10	426 1.4×	269 1.1×	197 1.0×	151 0.8×	160 1.3×	16	480

Countries citing papers authored by N. Zainal

Since Specialization

Citations

This map shows the geographic impact of N. Zainal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Zainal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Zainal more than expected).

Fields of papers citing papers by N. Zainal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Zainal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Zainal. The network helps show where N. Zainal may publish in the future.

Co-authorship network of co-authors of N. Zainal

This figure shows the co-authorship network connecting the top 25 collaborators of N. Zainal. A scholar is included among the top collaborators of N. Zainal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Zainal. N. Zainal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Suri, Manan, et al.. (2025). Novel staggered quantum well design and in-surfactant GaN buffer layer in UVA light emitting diode heterostructures. Optical Materials. 162. 116934–116934.

Zainal, N., Sylvia Hagedorn, Tim Kolbe, et al.. (2025). Surface improvement of high temperature annealed Si-doped AlGaN layers. Materials Science in Semiconductor Processing. 200. 109949–109949.

Chanlek, Narong, et al.. (2024). Influence of nitridation time on growth of AlN layers on different sapphire substrate off-cut angles. Materials Science in Semiconductor Processing. 187. 109130–109130.

Zainal, N., Sylvia Hagedorn, Carsten Netzel, Tim Kolbe, & M. Weyers. (2024). High‐Temperature Annealing of Si‐Doped AlGaN. physica status solidi (a). 221(7). 2 indexed citations

Ismail, Wan Zakiah Wan, et al.. (2022). Review of Open Cavity Random Lasers as Laser-Based Sensors. ACS Sensors. 7(4). 914–928. 33 indexed citations

Li, Hongjian, et al.. (2021). Limiting factors of GaN-on-GaN LED. Semiconductor Science and Technology. 36(9). 95035–95035. 5 indexed citations

Bakar, Ahmad Shuhaimi Abu, et al.. (2021). Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure. Journal of Physical Science. 32(3). 1–11. 1 indexed citations

Huang, Yuwei, et al.. (2021). SiO2 Capped-ZnO nanorods for enhanced random laser emission. Optics & Laser Technology. 147. 107633–107633. 16 indexed citations

Yusop, Mohd Zamri Mohd, et al.. (2021). GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth. Vacuum. 197. 110848–110848. 5 indexed citations

10.

Ibrahim, K., et al.. (2019). Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review. Journal of Physical Science. 30(2). 189–208.

11.

Bakar, Ahmad Shuhaimi Abu, et al.. (2019). Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template. Journal of Electronic Materials. 48(6). 3547–3553. 3 indexed citations

12.

Zainal, N., et al.. (2018). Processing and characterization of a free-standing bulk polycrystalline GaN layer. Journal of Alloys and Compounds. 769. 161–166. 2 indexed citations

13.

Zainal, N., et al.. (2018). Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique. Materials Science in Semiconductor Processing. 88. 40–44. 4 indexed citations

14.

Bakar, Ahmad Shuhaimi Abu, et al.. (2018). Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films. 667. 48–54. 5 indexed citations

15.

Bakar, Ahmad Shuhaimi Abu, et al.. (2018). Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures. 120. 319–326. 13 indexed citations

16.

Hassan, Z., et al.. (2018). Influence of ammonia flow rate for improving properties of polycrystalline GaN. Superlattices and Microstructures. 118. 130–136. 3 indexed citations

17.

Zainal, N., et al.. (2016). Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients. Superlattices and Microstructures. 97. 193–201. 8 indexed citations

18.

Zainal, N., et al.. (2015). Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN. Superlattices and Microstructures. 82. 592–598. 8 indexed citations

19.

Hassan, Z., N. Zainal, F.K. Yam, et al.. (2011). Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy. Advanced materials research. 364. 139–143. 1 indexed citations

20.

Hassan, Z., N. Zainal, M.R. Hashim, & H. Abu Hassan. (2005). Simulation of high performance quantum well GaN-based LED. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5722. 540–540. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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