Michiharu Tabe

2.3k total citations
105 papers, 1.7k citations indexed

About

Michiharu Tabe is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Michiharu Tabe has authored 105 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 54 papers in Atomic and Molecular Physics, and Optics and 32 papers in Materials Chemistry. Recurrent topics in Michiharu Tabe's work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (51 papers) and Silicon Nanostructures and Photoluminescence (28 papers). Michiharu Tabe is often cited by papers focused on Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (51 papers) and Silicon Nanostructures and Photoluminescence (28 papers). Michiharu Tabe collaborates with scholars based in Japan, Poland and United Kingdom. Michiharu Tabe's co-authors include Yasuhiko Ishikawa, Daniel Moraru, Takeshi Mizuno, Yukinori Ono, Kenji Kajiyama, Ratno Nuryadi, Yasuo Takahashi, Ryszard Jabłoński, Takeshi Yamamoto and Miftahul Anwar and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Michiharu Tabe

99 papers receiving 1.6k citations

Peers

Michiharu Tabe
Ray Duffy Ireland
P. J. McMarr United States
G. Lippert Germany
J.M.C. Stork United States
M. Tabe Japan
P. Fahey United States
Kalman Pelhos United States
Ray Duffy Ireland
Michiharu Tabe
Citations per year, relative to Michiharu Tabe Michiharu Tabe (= 1×) peers Ray Duffy

Countries citing papers authored by Michiharu Tabe

Since Specialization
Citations

This map shows the geographic impact of Michiharu Tabe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michiharu Tabe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michiharu Tabe more than expected).

Fields of papers citing papers by Michiharu Tabe

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michiharu Tabe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michiharu Tabe. The network helps show where Michiharu Tabe may publish in the future.

Co-authorship network of co-authors of Michiharu Tabe

This figure shows the co-authorship network connecting the top 25 collaborators of Michiharu Tabe. A scholar is included among the top collaborators of Michiharu Tabe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michiharu Tabe. Michiharu Tabe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Samanta, Arup, Manoharan Muruganathan, Masahiro Hori, et al.. (2017). Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation. The Japan Society of Applied Physics. 3. 1 indexed citations
2.
Samanta, Arup, Manoharan Muruganathan, Masahiro Hori, et al.. (2017). Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors. Applied Physics Letters. 110(9). 25 indexed citations
3.
Tabe, Michiharu, Daniel Moraru, Djoko Hartanto, et al.. (2017). A Statistical Study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors. 74–78. 1 indexed citations
4.
Moraru, Daniel, Arup Samanta, Manoharan Muruganathan, et al.. (2015). Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices. Nanoscale Research Letters. 10(1). 372–372. 8 indexed citations
5.
Samanta, Arup, Daniel Moraru, Takeshi Mizuno, & Michiharu Tabe. (2015). Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors. Scientific Reports. 5(1). 17377–17377. 9 indexed citations
6.
Moraru, Daniel, et al.. (2014). Transport spectroscopy of coupled donors in silicon nano-transistors. Scientific Reports. 4(1). 6219–6219. 25 indexed citations
7.
Moraru, Daniel, et al.. (2014). Individuality of Dopants in Silicon Nano-pn Junctions. Materials Science. 20(2).
8.
Tabe, Michiharu. (2013). Single Electron Transistors.
9.
Moraru, Daniel, et al.. (2013). Electron-tunneling operation of single-donor-atom transistors at elevated temperatures. Physical Review B. 87(8). 38 indexed citations
10.
Moraru, Daniel, et al.. (2011). Atom devices based on single dopants in silicon nanostructures. Nanoscale Research Letters. 6(1). 479–479. 58 indexed citations
11.
Tabe, Michiharu, Daniel Moraru, Miftahul Anwar, et al.. (2010). Single-Electron Transport through Single Dopants in a Dopant-Rich Environment. Physical Review Letters. 105(1). 16803–16803. 70 indexed citations
12.
Nuryadi, Ratno, Yasuhiko Ishikawa, & Michiharu Tabe. (2006). Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array. Physical Review B. 73(4). 16 indexed citations
13.
Sawada, Kazuaki, Michiharu Tabe, Yasuhiko Ishikawa, & Mákoto Ishida. (2002). Field electron emission device using silicon nanoprotrusions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 787–790. 1 indexed citations
14.
Tabe, Michiharu, et al.. (2001). Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate. Japanese Journal of Applied Physics. 40(2B). L131–L131. 18 indexed citations
15.
Ishikawa, Yasuhiko, et al.. (2001). Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface. Japanese Journal of Applied Physics. 40(3S). 1866–1866. 5 indexed citations
16.
Tabe, Michiharu & Takeshi Yamamoto. (1997). Initial stages of nitridation of Si(111) surfaces: X-ray photoelectron spectroscopy and scanning tunneling microscopy studies. Surface Science. 376(1-3). 99–112. 31 indexed citations
17.
Takahashi, Yasuo, et al.. (1995). Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate. Japanese Journal of Applied Physics. 34(2S). 950–950. 67 indexed citations
18.
Tabe, Michiharu. (1995). Thermal Nitridation of Si(111) Surfaces with N2 Molecules Studied by X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics. 34(10B). L1375–L1375. 14 indexed citations
19.
Karasawa, T., et al.. (1993). Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH4-B2H6 Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 32(3R). 1039–1039. 4 indexed citations
20.
Tabe, Michiharu, et al.. (1987). Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si Films. Japanese Journal of Applied Physics. 26(7R). 1008–1008. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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