G. P. Watson

1.6k total citations
57 papers, 1.2k citations indexed

About

G. P. Watson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, G. P. Watson has authored 57 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 16 papers in Surfaces, Coatings and Films. Recurrent topics in G. P. Watson's work include Advancements in Photolithography Techniques (20 papers), Semiconductor materials and interfaces (16 papers) and Semiconductor materials and devices (14 papers). G. P. Watson is often cited by papers focused on Advancements in Photolithography Techniques (20 papers), Semiconductor materials and interfaces (16 papers) and Semiconductor materials and devices (14 papers). G. P. Watson collaborates with scholars based in United States, Germany and Austria. G. P. Watson's co-authors include Eugene A. Fitzgerald, Ya‐Hong Xie, P. J. Silvėrman, D. G. Ast, Don Monroe, J. M. Woodall, R.E. Proano, G. D. Pettit, P. D. Kirchner and D. Monroe and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. P. Watson

54 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. P. Watson United States 15 998 676 308 269 108 57 1.2k
Mitsuru Sugo Japan 18 1.0k 1.0× 827 1.2× 157 0.5× 207 0.8× 35 0.3× 53 1.2k
Tomasz J. Ochalski Ireland 20 640 0.6× 517 0.8× 298 1.0× 323 1.2× 35 0.3× 60 860
F. Schrey United States 18 715 0.7× 840 1.2× 231 0.8× 121 0.4× 32 0.3× 49 988
E. Kubalek Germany 13 583 0.6× 365 0.5× 176 0.6× 231 0.9× 202 1.9× 97 795
Masao Nishioka Japan 20 963 1.0× 1.1k 1.6× 512 1.7× 224 0.8× 48 0.4× 56 1.2k
Yu. B. Bolkhovityanov Russia 17 779 0.8× 836 1.2× 415 1.3× 293 1.1× 20 0.2× 85 1.1k
Kenzo Akita Japan 18 876 0.9× 667 1.0× 152 0.5× 145 0.5× 168 1.6× 70 1.0k
C. W. Leitz United States 21 2.1k 2.1× 900 1.3× 371 1.2× 558 2.1× 36 0.3× 46 2.2k
M. Offenberg Germany 13 656 0.7× 271 0.4× 257 0.8× 179 0.7× 56 0.5× 30 799
Roberto Bergamaschini Italy 16 438 0.4× 320 0.5× 364 1.2× 282 1.0× 51 0.5× 47 721

Countries citing papers authored by G. P. Watson

Since Specialization
Citations

This map shows the geographic impact of G. P. Watson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. P. Watson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. P. Watson more than expected).

Fields of papers citing papers by G. P. Watson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. P. Watson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. P. Watson. The network helps show where G. P. Watson may publish in the future.

Co-authorship network of co-authors of G. P. Watson

This figure shows the co-authorship network connecting the top 25 collaborators of G. P. Watson. A scholar is included among the top collaborators of G. P. Watson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. P. Watson. G. P. Watson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Watson, G. P. & Andrew J. Margenot. (2022). Fruit lead concentrations of tomato (Solanum lycopersicum L.) grown in lead-contaminated soils are unaffected by phosphate amendments and can vary by season, but are below risk thresholds. The Science of The Total Environment. 836. 155076–155076. 2 indexed citations
2.
Watson, G. P., et al.. (2021). Soil lead distribution in Chicago, USA. Geoderma Regional. 28. e00480–e00480. 12 indexed citations
3.
Shah, Shrey & G. P. Watson. (2019). Effect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate. ScholarlyCommons (University of Pennsylvania). 1 indexed citations
4.
Dimitrov, V., Aleksei Aksimentiev, Klaus Schulten, et al.. (2006). Exploring the Prospects for a Nanometer-scale Gene Chip. 1–4. 3 indexed citations
5.
Watson, G. P., Vladimir Aksyuk, D. M. Tennant, & R. Cirelli. (2004). Comparison of tilting and piston mirror elements for 65nm node spatial light modulator optical maskless lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 3038–3042. 9 indexed citations
6.
Watson, G. P. & D. G. Ast. (2003). Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs. Journal of Applied Physics. 94(3). 1513–1517. 2 indexed citations
7.
8.
Watson, G. P., I.C. Kizilyalli, O. Nalamasu, et al.. (2000). Implementing advanced lithography technology: A 100 MHz, 1 V digital signal processor fabricated with phase shifted gates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 2877–2880. 1 indexed citations
9.
Cirelli, Raymond A., J. Bude, F. M. Houlihan, et al.. (2000). Probing the limits of optical lithography: The fabrication of sub-100nm devices with 193nm wavelength lithography. Microelectronic Engineering. 53(1-4). 87–90. 1 indexed citations
10.
Liddle, J. Alexander, Anthony E. Novembre, W. K. Waskiewicz, et al.. (1998). Electron scattering and transmission through SCALPEL masks. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(6). 3385–3391. 21 indexed citations
11.
Watson, G. P., et al.. (1998). Characterizing GHOST proximity effect correction effectiveness by determining the worst-case error. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(6). 3256–3261. 4 indexed citations
12.
Liddle, Joyce, et al.. (1997). Photon tunneling microscopy of latent resist images. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2162–2166. 2 indexed citations
13.
Watson, G. P., et al.. (1997). Towards 280 nm i-line random logic lithography with off-axis illumination and optical proximity correction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(6). 2422–2425. 1 indexed citations
14.
Koppensteiner, E., Alexander Schuh, G. Bauer, et al.. (1995). Determination of threading dislocation density in hetero-epitaxial layers by diffuse X-ray scattering. Journal of Physics D Applied Physics. 28(4A). A114–A119. 12 indexed citations
15.
Blakey, Myrtle I., R. C. Farrow, Linus A. Fetter, et al.. (1994). Lithographic performance of a negative resist under scattering with angular limitation for projection electron lithography exposure at 100 keV. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(6). 3444–3448. 1 indexed citations
16.
Watson, G. P., Eugene A. Fitzgerald, Ya‐Hong Xie, & Don Monroe. (1994). Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition. Journal of Applied Physics. 75(1). 263–269. 46 indexed citations
17.
Xie, Ya‐Hong, et al.. (1993). Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy. Applied Physics Letters. 63(16). 2263–2264. 160 indexed citations
18.
Watson, G. P., et al.. (1993). The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si0.7Ge0.3. MRS Proceedings. 320. 4 indexed citations
19.
Watson, G. P., Eugene A. Fitzgerald, Ya‐Hong Xie, et al.. (1993). Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si. Applied Physics Letters. 63(6). 746–748. 10 indexed citations
20.
Watson, G. P., D. G. Ast, & A. G. Elliot. (1989). Variation of lattice parameter with silicon concentration in n-doped, liquid-encapsulated Czochralski GaAs single crystals. Applied Physics Letters. 54(3). 271–273. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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