Stephan Wirths

3.6k total citations · 1 hit paper
92 papers, 2.8k citations indexed

About

Stephan Wirths is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Stephan Wirths has authored 92 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 28 papers in Biomedical Engineering. Recurrent topics in Stephan Wirths's work include Semiconductor materials and devices (41 papers), Photonic and Optical Devices (37 papers) and Advancements in Semiconductor Devices and Circuit Design (34 papers). Stephan Wirths is often cited by papers focused on Semiconductor materials and devices (41 papers), Photonic and Optical Devices (37 papers) and Advancements in Semiconductor Devices and Circuit Design (34 papers). Stephan Wirths collaborates with scholars based in Germany, Switzerland and France. Stephan Wirths's co-authors include Dan Buca, S. Mantl, Gregor Mußler, Detlev Grützmacher, T. Stoïca, Z. Ikonić, Nils von den Driesch, Richard Geiger, H. Sigg and S. Chiussi and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Stephan Wirths

88 papers receiving 2.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Lasing in direct-bandgap GeSn alloy grown on Si

2015 937 citations Stephan Wirths, Nils von den Driesch et al. profile →

Peers

Countries citing papers authored by Stephan Wirths

Since Specialization

Citations

This map shows the geographic impact of Stephan Wirths's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stephan Wirths with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stephan Wirths more than expected).

Fields of papers citing papers by Stephan Wirths

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stephan Wirths. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stephan Wirths. The network helps show where Stephan Wirths may publish in the future.

Co-authorship network of co-authors of Stephan Wirths

This figure shows the co-authorship network connecting the top 25 collaborators of Stephan Wirths. A scholar is included among the top collaborators of Stephan Wirths based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stephan Wirths. Stephan Wirths is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Luca Maresca, V. Terracciano, (unknown), (unknown), Michele Riccio, Giovanni Breglio, Andrei Mihăilă, G. Romano, Stephan Wirths, Lars Knoll, Andrea Irace	0
2	Dynamic Bias-Temperature Instability Testing in SiC MOSFETs 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Edoardo Martino, Slavo Kicin, Yuan Zong, (unknown), G. Romano, Ralph M. Burkart, (unknown), Stephan Wirths	0
3	Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs 2023 ·Key engineering materials ·Dong Yang, Stephan Wirths, Lars Knoll, Yi Han, (unknown), Qing‐Tai Zhao	2
4	Thermally activated diffusion and lattice relaxation in (Si)GeSn materials 2020 ·Physical Review Materials ·Nils von den Driesch, Stephan Wirths, (unknown), Gregor Mußler, U. Breuer, Oussama Moutanabbir, Detlev Grützmacher, Dan Buca	17
5	Threshold Voltage Stability Study on Power SiC MOSFETs Using High-k Dielectrics 2020 ·Stephan Wirths, (unknown), (unknown), (unknown), (unknown), Enea Bianda, Andrei Mihăilă, (unknown), Marco Bellini, G. Romano, Lars Knoll	1
6	Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability 2020 ·Stephan Wirths, (unknown), Andrei Mihăilă, Marco Bellini, G. Romano, Giovanni Alfieri, (unknown), Lars Knoll, Enea Bianda, (unknown)	10
7	Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates 2019 ·IEEE Photonics Technology Letters ·B. Mayer, Stephan Wirths, Svenja Mauthe, (unknown), Marilyne Sousa, (unknown), Heinz Schmid, Kirsten E. Moselund	18
8	Transition to the quantum hall regime in InAs nanowire cross-junctions 2019 ·Semiconductor Science and Technology ·Johannes Gooth, Mattias Borg, Heinz Schmid, (unknown), Marta D. Rossell, Stephan Wirths, Kirsten E. Moselund, Kornelius Nielsch, Heike Riel	2
9	Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs 2018 ·Lars Knoll, Andrei Mihăilă, Lukas Kranz, Marco Bellini, Stephan Wirths, Enea Bianda, Charalampos Papadopoulos, Munaf Rahimo	9
10	Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy 2017 ·Crystal Growth & Design ·(unknown), (unknown), Heinz Schmid, Mattias Borg, Kirsten E. Moselund, Stephan Wirths, Marta D. Rossell, Heike Riel	23
11	High-Mobility GaSb Nanostructures Cointegrated with InAs on Si 2017 ·ACS Nano ·Mattias Borg, Heinz Schmid, Johannes Gooth, Marta D. Rossell, Davide Cutaia, (unknown), (unknown), Stephan Wirths, Kirsten E. Moselund, Heike Riel	46
12	Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects 2017 ·Nano Letters ·Johannes Gooth, Mattias Borg, Heinz Schmid, (unknown), Stephan Wirths, Kirsten E. Moselund, Mathieu Luisier, Siegfried Karg, Heike Riel	42
13	Group IV epitaxy for advanced nano- and optoelectronic applications 2016 ·RWTH Publications (RWTH Aachen) ·Stephan Wirths	1
14	Quantum dots in InAs nanowires induced by surface potential fluctuations 2014 ·Nanotechnology ·(unknown), Stephan Wirths, A. Winden, Kamil Sladek, H. Hardtdegen, H. Lüth, Detlev Grützmacher, Thomas Schäpers	8
15	Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers 2014 ·Microelectronic Engineering ·Linjie Liu, Lei Jin, Lars Knoll, Stephan Wirths, Dan Buca, Gregor Mußler, B. Holländer, (unknown), (unknown), Miao Zhang, S. Mantl, Qing‐Tai Zhao	2
16	Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn 2013 ·Journal of Crystal Growth ·Michael Oehme, Dan Buca, Konrad Kostecki, Stephan Wirths, B. Holländer, E. Kasper, Jörg Schulze	65
17	Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors 2013 ·Applied Physics Letters ·Stephan Wirths, A. T. Tiedemann, Z. Ikonić, P. Harrison, B. Holländer, T. Stoïca, Gregor Mußler, M. Myronov, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, S. Mantl	124
18	Epitaxial Growth of Ge_1-xSn_x by Reduced Pressure CVD Using SnCl₄ and Ge₂H₆ 2013 ·ECS Transactions ·Stephan Wirths, Dan Buca, A. T. Tiedemann, B. Holländer, (unknown), T. Stoïca, Detlev Grützmacher, S. Mantl	26
19	Reduced Pressure CVD Growth of Ge and Ge_1−xSn_xAlloys 2013 ·ECS Journal of Solid State Science and Technology ·Stephan Wirths, Dan Buca, Gregor Mußler, A. T. Tiedemann, B. Holländer, (unknown), T. Stoïca, Detlev Grützmacher, S. Mantl	65
20	Low Temperature RPCVD Epitaxial Growth of Si1-xGex and Ge Using Si2H6 and Ge2H6 2012 ·Stephan Wirths, Dan Buca, A. T. Tiedemann, (unknown), B. Holländer, T. Stoïca, Gregor Mußler, U. Breuer, S. Mantl	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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