Stephan Wirths

3.6k total citations · 1 hit paper
92 papers, 2.8k citations indexed

About

Stephan Wirths is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Stephan Wirths has authored 92 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 28 papers in Biomedical Engineering. Recurrent topics in Stephan Wirths's work include Semiconductor materials and devices (41 papers), Photonic and Optical Devices (37 papers) and Advancements in Semiconductor Devices and Circuit Design (34 papers). Stephan Wirths is often cited by papers focused on Semiconductor materials and devices (41 papers), Photonic and Optical Devices (37 papers) and Advancements in Semiconductor Devices and Circuit Design (34 papers). Stephan Wirths collaborates with scholars based in Germany, Switzerland and France. Stephan Wirths's co-authors include Dan Buca, S. Mantl, Gregor Mußler, Detlev Grützmacher, T. Stoïca, Z. Ikonić, Nils von den Driesch, Richard Geiger, H. Sigg and S. Chiussi and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Stephan Wirths

88 papers receiving 2.7k citations

Hit Papers

Lasing in direct-bandgap ... 2015 2026 2018 2022 2015 250 500 750

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Stephan Wirths 2.6k 1.4k 964 474 128 92 2.8k
Nils von den Driesch 2.6k 1.0× 1.5k 1.1× 820 0.9× 568 1.2× 190 1.5× 73 2.8k
V. Calvo 1.4k 0.5× 794 0.6× 588 0.6× 458 1.0× 68 0.5× 97 1.6k
G. Masini 2.1k 0.8× 947 0.7× 710 0.7× 810 1.7× 86 0.7× 96 2.3k
Wei Du 2.6k 1.0× 1.2k 0.9× 691 0.7× 311 0.7× 133 1.0× 111 2.7k
Donguk Nam 939 0.4× 604 0.4× 429 0.4× 338 0.7× 77 0.6× 70 1.2k
Joe Margetis 2.3k 0.9× 1.1k 0.8× 603 0.6× 289 0.6× 127 1.0× 77 2.4k
Hsin-Chiao Luan 2.2k 0.8× 1.2k 0.9× 586 0.6× 638 1.3× 54 0.4× 19 2.3k
Kwang Hong Lee 1.4k 0.5× 610 0.4× 493 0.5× 309 0.7× 54 0.4× 101 1.6k
Masashi Kurosawa 1.3k 0.5× 529 0.4× 504 0.5× 975 2.1× 23 0.2× 129 1.7k
Desmond R. Lim 1.6k 0.6× 1.0k 0.7× 354 0.4× 350 0.7× 49 0.4× 28 1.7k

Countries citing papers authored by Stephan Wirths

Since Specialization
Citations

This map shows the geographic impact of Stephan Wirths's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stephan Wirths with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stephan Wirths more than expected).

Fields of papers citing papers by Stephan Wirths

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stephan Wirths. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stephan Wirths. The network helps show where Stephan Wirths may publish in the future.

Co-authorship network of co-authors of Stephan Wirths

This figure shows the co-authorship network connecting the top 25 collaborators of Stephan Wirths. A scholar is included among the top collaborators of Stephan Wirths based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stephan Wirths. Stephan Wirths is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Martino, Edoardo, Slavo Kicin, Yuan Zong, et al.. (2024). Dynamic Bias-Temperature Instability Testing in SiC MOSFETs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 361. 59–64.
2.
Maresca, Luca, V. Terracciano, Michele Riccio, et al.. (2024). SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 360. 75–80.
3.
Yang, Dong, et al.. (2023). Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs. Key engineering materials. 945. 77–82. 2 indexed citations
5.
Driesch, Nils von den, Stephan Wirths, Gregor Mußler, et al.. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials. 4(3). 17 indexed citations
6.
Wirths, Stephan, Enea Bianda, Andrei Mihăilă, et al.. (2020). Threshold Voltage Stability Study on Power SiC MOSFETs Using High-k Dielectrics. 1–8. 1 indexed citations
7.
Wirths, Stephan, Andrei Mihăilă, Marco Bellini, et al.. (2020). Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability. 226–229. 10 indexed citations
8.
Gooth, Johannes, Mattias Borg, Heinz Schmid, et al.. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology. 34(3). 35028–35028. 2 indexed citations
9.
Mayer, B., Stephan Wirths, Svenja Mauthe, et al.. (2019). Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates. IEEE Photonics Technology Letters. 31(13). 1021–1024. 18 indexed citations
10.
Wirths, Stephan, Giovanni Alfieri, Enea Bianda, et al.. (2019). Vertical 1.2kV SiC Power MOSFETs with High-k/Metal Gate Stack. 103–106. 13 indexed citations
11.
Knoll, Lars, Andrei Mihăilă, Lukas Kranz, et al.. (2018). Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs. 9 indexed citations
12.
Schmid, Heinz, Mattias Borg, Kirsten E. Moselund, et al.. (2017). Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy. Crystal Growth & Design. 17(12). 6297–6302. 23 indexed citations
13.
Borg, Mattias, Heinz Schmid, Johannes Gooth, et al.. (2017). High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. ACS Nano. 11(3). 2554–2560. 46 indexed citations
14.
Gooth, Johannes, Mattias Borg, Heinz Schmid, et al.. (2017). Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects. Nano Letters. 17(4). 2596–2602. 42 indexed citations
15.
Wirths, Stephan, A. Winden, Kamil Sladek, et al.. (2014). Quantum dots in InAs nanowires induced by surface potential fluctuations. Nanotechnology. 25(13). 135203–135203. 8 indexed citations
16.
Wirths, Stephan, Gregor Mußler, P. Zaumseil, et al.. (2014). Ni(SiGeSn) Metal Contact Formation on Low Bandgap Strained (Si)Ge(Sn) Semiconductors. ECS Transactions. 64(6). 107–112. 18 indexed citations
17.
Wirths, Stephan, Dan Buca, A. T. Tiedemann, et al.. (2013). Epitaxial Growth of Ge1-xSnx by Reduced Pressure CVD Using SnCl4 and Ge2H6. ECS Transactions. 50(9). 885–893. 26 indexed citations
18.
Oehme, Michael, Dan Buca, Konrad Kostecki, et al.. (2013). Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn. Journal of Crystal Growth. 384. 71–76. 65 indexed citations
19.
Wirths, Stephan, Z. Ikonić, A. T. Tiedemann, et al.. (2013). Tensely strained GeSn alloys as optical gain media. Applied Physics Letters. 103(19). 57 indexed citations
20.
Wirths, Stephan, Dan Buca, A. T. Tiedemann, et al.. (2012). Low Temperature RPCVD Epitaxial Growth of Si1-xGex and Ge Using Si2H6 and Ge2H6. 1–2. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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