S. M. Ting

500 total citations
14 papers, 410 citations indexed

About

S. M. Ting is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, S. M. Ting has authored 14 papers receiving a total of 410 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Atomic and Molecular Physics, and Optics, 9 papers in Electrical and Electronic Engineering and 5 papers in Materials Chemistry. Recurrent topics in S. M. Ting's work include Semiconductor Quantum Structures and Devices (9 papers), Nanowire Synthesis and Applications (4 papers) and Photonic and Optical Devices (3 papers). S. M. Ting is often cited by papers focused on Semiconductor Quantum Structures and Devices (9 papers), Nanowire Synthesis and Applications (4 papers) and Photonic and Optical Devices (3 papers). S. M. Ting collaborates with scholars based in United States. S. M. Ting's co-authors include Eugene A. Fitzgerald, R. M. Sieg, Steven A. Ringel, R. N. Sacks, M. T. Currie, T. A. Langdo, Srikanth Samavedam, S. A. Ringel, John Boeckl and John A. Carlin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

S. M. Ting

14 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. M. Ting United States	9	351	331	150	70	23	14	410
Y. Temko Germany	12	220 0.6×	348 1.1×	85 0.6×	132 1.9×	39 1.7×	22	372
B. E. Maile Germany	12	292 0.8×	311 0.9×	64 0.4×	76 1.1×	47 2.0×	25	378
J. Márquez Germany	10	126 0.4×	315 1.0×	85 0.6×	101 1.4×	41 1.8×	19	352
S. K. Becker Germany	9	172 0.5×	346 1.0×	90 0.6×	95 1.4×	48 2.1×	12	356
A. Moscho United States	4	302 0.9×	324 1.0×	88 0.6×	212 3.0×	21 0.9×	8	382
D.L. Huffaker United States	9	331 0.9×	317 1.0×	62 0.4×	160 2.3×	8 0.3×	18	385
R. Jakomin Brazil	10	339 1.0×	228 0.7×	138 0.9×	137 2.0×	14 0.6×	31	381
K.-H. Goetz Germany	5	268 0.8×	300 0.9×	36 0.2×	92 1.3×	24 1.0×	8	335
Frank Tutu United Kingdom	7	404 1.2×	380 1.1×	89 0.6×	201 2.9×	16 0.7×	7	480
Sepideh Gorji Ghalamestani Sweden	13	310 0.9×	211 0.6×	345 2.3×	142 2.0×	18 0.8×	18	407

Countries citing papers authored by S. M. Ting

Since Specialization

Citations

This map shows the geographic impact of S. M. Ting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. M. Ting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. M. Ting more than expected).

Fields of papers citing papers by S. M. Ting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. M. Ting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. M. Ting. The network helps show where S. M. Ting may publish in the future.

Co-authorship network of co-authors of S. M. Ting

This figure shows the co-authorship network connecting the top 25 collaborators of S. M. Ting. A scholar is included among the top collaborators of S. M. Ting based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. M. Ting. S. M. Ting is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Lee, Dong‐Seon, et al.. (2008). Carrier injection efficiency in nitride LEDs. Journal of Crystal Growth. 310(23). 5158–5161. 4 indexed citations

Yang, V. K., S. M. Ting, M. Groenert, et al.. (2003). Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate. Journal of Applied Physics. 93(9). 5095–5102. 13 indexed citations

Florescu, D. I., Dongzhu Lu, J. Ramer, et al.. (2002). Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 524–527. 2 indexed citations

Ringel, Steven A., R. M. Sieg, S. M. Ting, & Eugene A. Fitzgerald. (2002). Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications. 793–798. 8 indexed citations

Ting, S. M. & Eugene A. Fitzgerald. (2000). Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates. Journal of Applied Physics. 87(5). 2618–2628. 131 indexed citations

Ting, S. M., Mayank T. Bulsara, V. K. Yang, et al.. (1999). Monolithic integration of III-V materials and devices on silicon. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3630. 19–19. 8 indexed citations

Ting, S. M., Eugene A. Fitzgerald, R. M. Sieg, & Steven A. Ringel. (1998). Range of defect morphologies on GaAs grown on offcut (001) Ge substrates. Journal of Electronic Materials. 27(5). 451–461. 18 indexed citations

Sieg, R. M., John A. Carlin, John Boeckl, et al.. (1998). High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates. Applied Physics Letters. 73(21). 3111–3113. 62 indexed citations

Ting, S. M., Srikanth Samavedam, M. T. Currie, T. A. Langdo, & Eugene A. Fitzgerald. (1998). Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition. MRS Proceedings. 510. 1 indexed citations

10.

Sieg, R. M., Steven A. Ringel, S. M. Ting, Eugene A. Fitzgerald, & R. N. Sacks. (1998). Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion. Journal of Electronic Materials. 27(7). 900–907. 90 indexed citations

11.

Sieg, R. M., S. A. Ringel, S. M. Ting, et al.. (1998). Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1471–1474. 53 indexed citations

12.

Xu, Qin, Julia W. P. Hsu, S. M. Ting, et al.. (1998). Scanning force microscopy studies of GaAs films grown on offcut Ge substrates. Journal of Electronic Materials. 27(9). 1010–1016. 16 indexed citations

13.

Joshi, Abhay, et al.. (1997). <title>Monolithic InGaAs-on-silicon shortwave infrared detector arrays</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2999. 211–224. 3 indexed citations

14.

Samavedam, Srikanth, M. T. Currie, T. A. Langdo, S. M. Ting, & Eugene A. Fitzgerald. (1997). High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step. MRS Proceedings. 486. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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