S. A. Ringel

452 total citations
25 papers, 366 citations indexed

About

S. A. Ringel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. A. Ringel has authored 25 papers receiving a total of 366 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 6 papers in Condensed Matter Physics. Recurrent topics in S. A. Ringel's work include Semiconductor Quantum Structures and Devices (10 papers), solar cell performance optimization (6 papers) and Semiconductor materials and devices (6 papers). S. A. Ringel is often cited by papers focused on Semiconductor Quantum Structures and Devices (10 papers), solar cell performance optimization (6 papers) and Semiconductor materials and devices (6 papers). S. A. Ringel collaborates with scholars based in United States, Spain and Italy. S. A. Ringel's co-authors include Robert Kaplar, Andrew A. Allerman, S. R. Kurtz, Eugene A. Fitzgerald, Daewon Kwon, E. D. Jones, M. T. Currie, T. A. Langdo, R. M. Sieg and Srikanth Samavedam and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Progress in Photovoltaics Research and Applications.

In The Last Decade

S. A. Ringel

24 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. A. Ringel United States 12 292 247 103 92 61 25 366
L. Malikova United States 9 273 0.9× 270 1.1× 113 1.1× 167 1.8× 39 0.6× 23 383
X. Hoffer Switzerland 12 157 0.5× 267 1.1× 65 0.6× 214 2.3× 77 1.3× 13 409
S. K. Chang South Korea 8 206 0.7× 171 0.7× 62 0.6× 245 2.7× 28 0.5× 30 342
J.-G. Rousset Poland 11 155 0.5× 220 0.9× 56 0.5× 158 1.7× 43 0.7× 27 341
Y. G. Hong United States 14 329 1.1× 396 1.6× 297 2.9× 103 1.1× 61 1.0× 48 477
Sankalp Kumar Singh Taiwan 10 219 0.8× 140 0.6× 88 0.9× 95 1.0× 96 1.6× 38 318
S. Barbet France 12 299 1.0× 200 0.8× 43 0.4× 48 0.5× 55 0.9× 37 390
Mahmoud R. M. Atalla United States 10 245 0.8× 97 0.4× 52 0.5× 73 0.8× 96 1.6× 36 303
Takayuki Morioka Japan 8 226 0.8× 223 0.9× 28 0.3× 207 2.3× 69 1.1× 15 335
Niti Goel United States 10 293 1.0× 160 0.6× 50 0.5× 132 1.4× 212 3.5× 17 384

Countries citing papers authored by S. A. Ringel

Since Specialization
Citations

This map shows the geographic impact of S. A. Ringel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. A. Ringel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. A. Ringel more than expected).

Fields of papers citing papers by S. A. Ringel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. A. Ringel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. A. Ringel. The network helps show where S. A. Ringel may publish in the future.

Co-authorship network of co-authors of S. A. Ringel

This figure shows the co-authorship network connecting the top 25 collaborators of S. A. Ringel. A scholar is included among the top collaborators of S. A. Ringel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. A. Ringel. S. A. Ringel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Z., Esmat Farzana, En Xia Zhang, et al.. (2015). Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN. Journal of Applied Physics. 118(15). 25 indexed citations
2.
Grassman, Tyler J., et al.. (2011). High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters. 99(14). 20 indexed citations
3.
Warner, Jeffrey H., Cory D. Cress, Scott R. Messenger, et al.. (2010). A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated ${\hbox {p}} ^{+} {\hbox {n}}$ GaAs Diodes. IEEE Transactions on Nuclear Science. 57(4). 1940–1945. 11 indexed citations
4.
Warner, Jeffrey H., Scott R. Messenger, Robert Walters, S. A. Ringel, & Mark Brenner. (2009). A deep level transient spectroscopy study of electron and proton irradiated p<sup>&#x002B;</sup>n GaAs diodes. 282–285. 1 indexed citations
5.
González, M., C. Andre, R. J. Walters, et al.. (2006). Deep level defects in proton radiated GaAs grown on metamorphic SiGe∕Si substrates. Journal of Applied Physics. 100(3). 16 indexed citations
6.
Boeckl, John, et al.. (2006). Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy. Journal of Applied Physics. 100(1). 25 indexed citations
7.
8.
Wilt, David M., Norman F. Prokop, S. A. Ringel, et al.. (2005). Thermal cycle testing of GaAs on Si and metamorphic tandem on Si solar cells. 571–574. 1 indexed citations
9.
Andre, C., John Boeckl, C. W. Leitz, et al.. (2003). Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates. Journal of Applied Physics. 94(8). 4980–4985. 6 indexed citations
10.
Carlin, John A., Mantu K. Hudait, S. A. Ringel, et al.. (2002). High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers. 1006–1011. 16 indexed citations
11.
Kaplar, Robert, S. A. Ringel, S. R. Kurtz, J. F. Klem, & Andrew A. Allerman. (2002). Deep-level defects in InGaAsN grown by molecular-beam epitaxy. Applied Physics Letters. 80(25). 4777–4779. 34 indexed citations
12.
Ringel, S. A., R. N. Sacks, Liang Qin, Marvin B. Clevenger, & Christopher S. Murray. (1999). Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices. AIP conference proceedings. 142–151. 1 indexed citations
13.
Clevenger, Marvin B., Christopher S. Murray, S. A. Ringel, et al.. (1999). Optical properties of thin semiconductor device structures with reflective back-surface layers. AIP conference proceedings. 327–334. 4 indexed citations
14.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (1999). Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes. MRS Proceedings. 595. 1 indexed citations
15.
Anderson, Betty Lise, et al.. (1998). Photonics laboratory with emphasis on technical diversity. IEEE Transactions on Education. 41(3). 194–202. 8 indexed citations
16.
Clevenger, Marvin B., Christopher S. Murray, S. A. Ringel, et al.. (1998). Optical properties of thin semiconductor device structures with reflective back-surface layers. University of North Texas Digital Library (University of North Texas). 1 indexed citations
17.
Ringel, S. A., R. N. Sacks, Liang Qin, Marvin B. Clevenger, & Christopher S. Murray. (1998). Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices. University of North Texas Digital Library (University of North Texas). 1 indexed citations
18.
Hierro, A., Daewon Kwon, S. A. Ringel, et al.. (1998). Deep Level Characterization of Interface-Engineered ZnSe Layers Grown by Molecular Beam Epitaxy on GaAs. MRS Proceedings. 535. 1 indexed citations
19.
Sieg, R. M., S. A. Ringel, S. M. Ting, et al.. (1998). Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1471–1474. 53 indexed citations
20.
Sacks, R. N., R. M. Sieg, & S. A. Ringel. (1996). Investigation of the accuracy of pyrometric interferometry in determining AlxGa1−xAs growth rates and compositions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2157–2162. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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