V. Bousquet

656 total citations
35 papers, 533 citations indexed

About

V. Bousquet is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, V. Bousquet has authored 35 papers receiving a total of 533 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Atomic and Molecular Physics, and Optics, 22 papers in Condensed Matter Physics and 18 papers in Electrical and Electronic Engineering. Recurrent topics in V. Bousquet's work include Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (22 papers) and Ga2O3 and related materials (7 papers). V. Bousquet is often cited by papers focused on Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (22 papers) and Ga2O3 and related materials (7 papers). V. Bousquet collaborates with scholars based in France, United Kingdom and Switzerland. V. Bousquet's co-authors include B. Beaumont, P. Gibart, P. Vennéguès, E. Tournié, J. P. Faurie, M. Vaille, M. Kauer, S. E. Hooper, Jon Heffernan and M. Laügt and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

V. Bousquet

35 papers receiving 518 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Bousquet France 12 359 269 267 226 145 35 533
Veit Hoffmann Germany 14 441 1.2× 235 0.9× 273 1.0× 222 1.0× 197 1.4× 44 585
L. Considine Ireland 12 316 0.9× 282 1.0× 344 1.3× 270 1.2× 159 1.1× 40 638
Tsunenori Asatsuma Japan 12 355 1.0× 290 1.1× 167 0.6× 154 0.7× 118 0.8× 27 455
Daniel A. Haeger United States 13 502 1.4× 323 1.2× 164 0.6× 175 0.8× 159 1.1× 20 551
P. Gilet France 13 448 1.2× 383 1.4× 345 1.3× 254 1.1× 152 1.0× 25 685
Toshiyuki Tanahashi Japan 15 343 1.0× 471 1.8× 391 1.5× 174 0.8× 113 0.8× 38 672
Christos Thomidis United States 15 439 1.2× 246 0.9× 184 0.7× 179 0.8× 240 1.7× 35 561
Takamichi Sumitomo Japan 5 618 1.7× 382 1.4× 278 1.0× 180 0.8× 217 1.5× 9 698
S. Ruffenach France 12 305 0.8× 263 1.0× 201 0.8× 278 1.2× 178 1.2× 27 542
F. J. Pacheco Spain 12 320 0.9× 241 0.9× 275 1.0× 165 0.7× 160 1.1× 23 535

Countries citing papers authored by V. Bousquet

Since Specialization
Citations

This map shows the geographic impact of V. Bousquet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Bousquet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Bousquet more than expected).

Fields of papers citing papers by V. Bousquet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Bousquet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Bousquet. The network helps show where V. Bousquet may publish in the future.

Co-authorship network of co-authors of V. Bousquet

This figure shows the co-authorship network connecting the top 25 collaborators of V. Bousquet. A scholar is included among the top collaborators of V. Bousquet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Bousquet. V. Bousquet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tan, W. S., et al.. (2009). InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator. Japanese Journal of Applied Physics. 48(7R). 72102–72102. 7 indexed citations
2.
Tan, W. S., M. Kauer, S. E. Hooper, et al.. (2009). Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy. physica status solidi (a). 206(6). 1205–1210. 1 indexed citations
3.
Bellanger, Mathieu, V. Bousquet, Gabriel Christmann, Jeremy J. Baumberg, & M. Kauer. (2009). Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AlInN Wet Etching. Applied Physics Express. 2(12). 121003–121003. 13 indexed citations
4.
Tan, W. S., et al.. (2009). Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation. Applied Physics Express. 2(11). 112101–112101. 8 indexed citations
5.
Tan, W. S., M. Kauer, S. E. Hooper, et al.. (2008). High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy. Electronics Letters. 44(5). 351–353. 5 indexed citations
6.
Kauer, M., V. Bousquet, S. E. Hooper, et al.. (2006). Nitrides optoelectronic devices grown by molecular beam epitaxy. physica status solidi (a). 204(1). 221–226. 11 indexed citations
7.
Heffernan, Jon, M. Kauer, S. E. Hooper, et al.. (2006). Characteristics of CW violet laser diodes grown by MBE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6133. 61330O–61330O. 1 indexed citations
8.
Kauer, M., S. E. Hooper, V. Bousquet, et al.. (2005). Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy. Electronics Letters. 41(13). 739–741. 19 indexed citations
9.
Hooper, S. E., et al.. (2005). InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy. Journal of Crystal Growth. 278(1-4). 361–366. 9 indexed citations
10.
Johnson, Kelsey E., et al.. (2004). High-power InGaN light emitting diodes grown by molecular beam epitaxy. Electronics Letters. 40(20). 1299–1300. 11 indexed citations
11.
Hooper, S. E., M. Kauer, V. Bousquet, et al.. (2004). InGaN multiple quantum well laser diodes grown by molecular beam epitaxy. Electronics Letters. 40(1). 33–34. 32 indexed citations
12.
Heffernan, Jon, M. Kauer, S. E. Hooper, V. Bousquet, & Kelsey E. Johnson. (2004). InGaN violet laser diodes grown by Molecular Beam Epitaxy. physica status solidi (a). 201(12). 2668–2671. 3 indexed citations
13.
Bousquet, V., Jon Heffernan, Jean‐Paul Barnes, & S. E. Hooper. (2001). Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy. Applied Physics Letters. 78(6). 754–756. 6 indexed citations
14.
Bousquet, V., M. Laügt, P. Vennéguès, E. Tournié, & J. P. Faurie. (1999). Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer. Journal of Crystal Growth. 201-202. 498–501. 4 indexed citations
15.
Bousquet, V., P. Vennéguès, B. Beaumont, M. Vaille, & P. Gibart. (1999). TEM Study of the Behavior of Dislocations during ELO of GaN. physica status solidi (b). 216(1). 691–695. 5 indexed citations
16.
Tournié, E., V. Bousquet, & J. P. Faurie. (1999). Molecular-beam epitaxy of BeTe layers on GaAs substrates. Journal of Crystal Growth. 201-202. 494–497. 1 indexed citations
17.
Tournié, E., V. Bousquet, & J. P. Faurie. (1998). Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction. Applied Physics Letters. 72(22). 2859–2861. 11 indexed citations
18.
Bousquet, V., et al.. (1997). (001) GaAs substrate preparation for direct ZnSe heteroepitaxy. Journal of Applied Physics. 81(10). 7012–7017. 10 indexed citations
19.
Grein, C. H., J. P. Faurie, V. Bousquet, et al.. (1997). Simulations of heteroepitaxial growth. Journal of Crystal Growth. 178(3). 258–267. 33 indexed citations
20.
Bousquet, V., et al.. (1997). Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates. Applied Physics Letters. 70(26). 3564–3566. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Veit Hoffmann Breakdown of academic impact, for papers by L. Considine Breakdown of academic impact, for papers by Tsunenori Asatsuma Breakdown of academic impact, for papers by Daniel A. Haeger Breakdown of academic impact, for papers by P. Gilet Breakdown of academic impact, for papers by Toshiyuki Tanahashi Breakdown of academic impact, for papers by Christos Thomidis Breakdown of academic impact, for papers by Takamichi Sumitomo Breakdown of academic impact, for papers by S. Ruffenach Breakdown of academic impact, for papers by F. J. Pacheco
Rankless by CCL
2026