V. Bousquet

656 citations

35 papers · 533 indexed · h-index 12

Co-authors: B. Beaumont P. Gibart P. Vennéguès M. Vaille E. Tournié J. P. Faurie M. Kauer S. E. Hooper
Topics: Semiconductor Quantum Structures and Devices (27 papers)GaN-based semiconductor devices and materials (22 papers)Ga2O3 and related materials (7 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters Journal of Applied Physics Journal of Physics Condensed Matter
Partner nations: United Kingdom France Switzerland

In The Last Decade

V. Bousquet

35 papers receiving 518 citations

Peers

Countries citing papers authored by V. Bousquet

Since Specialization

Citations

This map shows the geographic impact of V. Bousquet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Bousquet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Bousquet more than expected).

Fields of papers citing papers by V. Bousquet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Bousquet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Bousquet. The network helps show where V. Bousquet may publish in the future.

Co-authorship network of co-authors of V. Bousquet

This figure shows the co-authorship network connecting the top 25 collaborators of V. Bousquet. A scholar is included among the top collaborators of V. Bousquet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Bousquet. V. Bousquet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy 2009 ·physica status solidi (a) ·W. S. Tan,M. Kauer,S. E. Hooper,T. M. Smeeton,V. Bousquet,Marco Rossetti,Jon Heffernan,Huixin Xiu,C. J. Humphreys	1
2	InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator 2009 ·Japanese Journal of Applied Physics ·W. S. Tan,V. Bousquet,M. Kauer,Koji Takahashi,(unknown)	7
3	Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation 2009 ·Applied Physics Express ·W. S. Tan,Koji Takahashi,V. Bousquet,(unknown),(unknown),Masataka Ohta,M. Kauer	8
4	Characteristics of CW violet laser diodes grown by MBE 2006 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jon Heffernan,M. Kauer,S. E. Hooper,V. Bousquet,(unknown),T. M. Smeeton,J. Barnes	1
5	Nitrides optoelectronic devices grown by molecular beam epitaxy 2006 ·physica status solidi (a) ·M. Kauer,V. Bousquet,S. E. Hooper,J. Barnes,(unknown),W. S. Tan,Jon Heffernan	11
6	Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy 2005 ·Electronics Letters ·M. Kauer,S. E. Hooper,V. Bousquet,Kelsey E. Johnson,(unknown),J. Barnes,(unknown),T. M. Smeeton,Jon Heffernan	19
7	InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy 2005 ·Journal of Crystal Growth ·S. E. Hooper,M. Kauer,V. Bousquet,Kelsey E. Johnson,(unknown),Jon Heffernan	9
8	InGaN multiple quantum well laser diodes grown by molecular beam epitaxy 2004 ·Electronics Letters ·S. E. Hooper,M. Kauer,V. Bousquet,Kelsey E. Johnson,J. Barnes,Jon Heffernan	32
9	High-power InGaN light emitting diodes grown by molecular beam epitaxy 2004 ·Electronics Letters ·Kelsey E. Johnson,V. Bousquet,S. E. Hooper,M. Kauer,(unknown),Jon Heffernan	11
10	Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy 2001 ·Applied Physics Letters ·V. Bousquet,Jon Heffernan,Jean‐Paul Barnes,S. E. Hooper	6
11	Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer 1999 ·Journal of Crystal Growth ·V. Bousquet,M. Laügt,P. Vennéguès,E. Tournié,J. P. Faurie	4
12	TEM Study of the Behavior of Dislocations during ELO of GaN 1999 ·physica status solidi (b) ·V. Bousquet,P. Vennéguès,B. Beaumont,M. Vaille,P. Gibart	5
13	Molecular-beam epitaxy of BeTe layers on GaAs substrates 1999 ·Journal of Crystal Growth ·E. Tournié,V. Bousquet,J. P. Faurie	1
14	A Two-Step Method for Epitaxial Lateral Overgrowth of GaN 1999 ·physica status solidi (a) ·B. Beaumont,V. Bousquet,P. Vennéguès,M. Vaille,(unknown),P. Gibart,(unknown),(unknown),Brigitte Sieber	37
15	Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction 1998 ·Applied Physics Letters ·E. Tournié,V. Bousquet,J. P. Faurie	11
16	Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers 1998 ·Journal of Crystal Growth ·V. Bousquet,E. Tournié,J. P. Faurie	16
17	Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates 1998 ·Journal of Crystal Growth ·J. P. Faurie,V. Bousquet,Paul Brunet,E. Tournié	27
18	(001) GaAs substrate preparation for direct ZnSe heteroepitaxy 1997 ·Journal of Applied Physics ·V. Bousquet,(unknown),M. Laügt,Martin Behringer,E. Tournié,J. P. Faurie	10
19	Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates 1997 ·Applied Physics Letters ·V. Bousquet,E. Tournié,M. Laügt,(unknown),J. P. Faurie	35
20	Simulations of heteroepitaxial growth 1997 ·Journal of Crystal Growth ·C. H. Grein,J. P. Faurie,V. Bousquet,E. Tournié,R. Benedek,T. de la Rubia	33

About V. Bousquet

V. Bousquet is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 35 papers that have together received 533 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (27 papers), GaN-based semiconductor devices and materials (22 papers) and Ga2O3 and related materials (7 papers). The work is most often cited by research in Condensed Matter Physics (359 citations), Atomic and Molecular Physics, and Optics (269 citations) and Electronic, Optical and Magnetic Materials (145 citations). V. Bousquet has collaborated with scholars based in United Kingdom, France and Switzerland. Frequent co-authors include B. Beaumont, P. Gibart, P. Vennéguès, M. Vaille, E. Tournié, J. P. Faurie, M. Kauer, S. E. Hooper, Jon Heffernan and M. Laügt. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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