S. A. Goodman

1.6k citations

74 papers · 1.4k indexed · h-index 19

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Nuclear Energy and Engineering top 5%

Papers in

Nuclear Energy and Engineering 3
Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 26

Co-authors: F.D. Auret M. J. Legodi W.E. Meyer G. Myburg P. Gibart B. Beaumont M. Hayes F. K. Koschnick
Journals: Applied Physics Letters (13 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (11 papers)Materials Science and Engineering B (6 papers)Journal of Applied Physics (6 papers)Physica B Condensed Matter (4 papers)
Partner nations: South Africa France Germany

In The Last Decade

S. A. Goodman

74 papers receiving 1.4k citations

Peers

Countries citing papers authored by S. A. Goodman

Since Specialization

Citations

This map shows the geographic impact of S. A. Goodman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. A. Goodman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. A. Goodman more than expected).

Fields of papers citing papers by S. A. Goodman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. A. Goodman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. A. Goodman. The network helps show where S. A. Goodman may publish in the future.

Co-authors

The 25 scholars most cited alongside S. A. Goodman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. A. Goodman Line = papers co-authored together S. A. Goodman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Radiation doses to staff in the evolving world of nuclear medicine: is radiation safety for staff being maintained? Queensland's institutional digital repository (The University of Queensland) ·James Turner, L. H. Gray, S. A. Goodman	2015	4
2	Conduction models in polyaniline Synthetic Metals ·Pope PB, S. A. Goodman, F.D. Auret	2002	23
3	Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16 Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·N.G. van der Berg, J.B. Malherbe, Alifiah Putty Agustia, S. A. Goodman, Jean-Louis Bostvironnois	2002	4
4	Electron irradiation induced defects in n-GaN S. A. Goodman, F.D. Auret, M. J. Legodi, G. Myburg, B. Beaumont, P. Gibart	2002	1
5	Electrical characterization of growth-induced defects inn-GaN Radiation effects and defects in solids ·F.D. Auret, S. A. Goodman, G. Myburg, W.E. Meyer, J.‐M. Spaeth, P. Gibart, B. Beaumont	2001	4
6	Processing-induced electron traps in n-type GaN Materials Science and Engineering B ·F.D. Auret, S. A. Goodman, G. Myburg, Suzanne E. Mohney, Edi Firdiyanto	2001	13
7	Radiation induced defects in n-GaN, an overview Radiation effects and defects in solids ·S. A. Goodman, F.D. Auret, G. Myburg, J.‐M. Spaeth, B. Beaumont, P. Gibart	2001	2
8	Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts Physica B Condensed Matter ·F.D. Auret, S. A. Goodman, G. Myburg, F. K. Koschnick, J.‐M. Spaeth, B. Beaumont, P. Gibart	1999	21
9	Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation MRS Internet Journal of Nitride Semiconductor Research ·S. A. Goodman, F.D. Auret, F. K. Koschnick, J.‐M. Spaeth, B. Beaumont, P. Gibart	1999	3
10	Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma Semiconductor Science and Technology ·M. Mamor, F.D. Auret, M. Willander, S. A. Goodman, G. Myburg, F. Meyer	1999	11
11	A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment Journal of Applied Physics ·F.D. Auret, Prakash N. K. Deenapanray, S. A. Goodman, W.E. Meyer, G. Myburg	1998	18
12	Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes Applied Physics Letters ·M. Mamor, F.D. Auret, S. A. Goodman, G. Myburg	1998	22
13	Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation Applied Physics Letters ·M. Mamor, F.D. Auret, S. A. Goodman, W.E. Meyer, G. Myburg	1998	9
14	Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si<sub>1-x</sub>Ge<sub>x</sub> Materials science forum ·M. Mamor, F.D. Auret, S. A. Goodman, G. Myburg, Prakash N. K. Deenapanray, W.E. Meyer	1997	1
15	Optical And Electrical Characterisation Study Of SICL₄ Reactive Ion Etched Gaas MRS Proceedings ·後藤武俊, E. Boden, P. Cosyns, John G. o'Grady, G.M. Crean, F.D. Auret, Prakash N. K. Deenapanray, W.E. Meyer, S. A. Goodman, G. Myburg	1996	1
16	Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F.D. Auret, S. A. Goodman, Rudolph Erasmus, W.E. Meyer, G. Myburg	1995	16
17	Defect annealing of alpha-particle irradiated n-GaAs Applied Physics A ·S. A. Goodman, F.D. Auret, G. Myburg	1994	12
18	Ruthenium and ruthenium-based contacts to GaAs Applied Surface Science ·G. Myburg, Werner Barnard, W.E. Meyer, C.W. Louw, N. A. Halimov, M. Hayes, F.D. Auret, S. A. Goodman	1993	8
19	Electrical and defect characterization of n-Type GaAs irradiated with α-particles using a van de graaff accelerator and an Am-241 radio-nuclide source physica status solidi (a) ·S. A. Goodman, F.D. Auret, M. Hayes, G. Myburg, W.E. Meyer	1993	6
20	DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes Journal of Electronic Materials ·F.D. Auret, S. A. Goodman, G. Myburg	1992	2

About S. A. Goodman

S. A. Goodman is a scholar working on Nuclear Energy and Engineering, Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 74 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (50 papers), Semiconductor materials and interfaces (28 papers), GaN-based semiconductor devices and materials (26 papers), Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), Ga2O3 and related materials (16 papers), Ion-surface interactions and analysis (12 papers) and Metal and Thin Film Mechanics (5 papers). The work is most often cited by research in Condensed Matter Physics (478 citations), Nuclear Energy and Engineering (15 citations), Electronic, Optical and Magnetic Materials (496 citations), Electrical and Electronic Engineering (1.0k citations) and Atomic and Molecular Physics, and Optics (416 citations). S. A. Goodman has collaborated with scholars based in South Africa, France and Germany. Frequent co-authors include F.D. Auret, M. J. Legodi, W.E. Meyer, G. Myburg, P. Gibart, B. Beaumont, M. Hayes, F. K. Koschnick, D. C. Look and D. C. Look. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Materials Science and Engineering B, Journal of Applied Physics and Physica B Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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