Toshiki Makimōto

7.2k total citations · 2 hit papers
185 papers, 6.2k citations indexed

About

Toshiki Makimōto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Toshiki Makimōto has authored 185 papers receiving a total of 6.2k indexed citations (citations by other indexed papers that have themselves been cited), including 127 papers in Condensed Matter Physics, 120 papers in Electrical and Electronic Engineering and 74 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Toshiki Makimōto's work include GaN-based semiconductor devices and materials (118 papers), Semiconductor materials and devices (82 papers) and Semiconductor Quantum Structures and Devices (68 papers). Toshiki Makimōto is often cited by papers focused on GaN-based semiconductor devices and materials (118 papers), Semiconductor materials and devices (82 papers) and Semiconductor Quantum Structures and Devices (68 papers). Toshiki Makimōto collaborates with scholars based in Japan, United States and Germany. Toshiki Makimōto's co-authors include Makoto Kasu, Yoshitaka Taniyasu, Kazuhide Kumakura, Naoki Kobayashi, Tetsuya Akasaka, Yasuyuki Kobayashi, Yoshiji Horíkoshi, K. Ueda, Y. Yamauchi and Naoki Kobayashi and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Toshiki Makimōto

179 papers receiving 6.0k citations

Hit Papers

An aluminium nitride light-emitting diode with a waveleng... 2006 2026 2012 2019 2006 2012 400 800 1.2k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
    2006 1.5k citations Yoshitaka Taniyasu, Makoto Kasu et al. Nature profile →
  2. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
    2012 369 citations Yasuyuki Kobayashi, Kazuhide Kumakura et al. Nature profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Toshiki Makimōto Japan 38 4.0k 3.0k 2.7k 1.9k 1.8k 185 6.2k
Menno J. Kappers United Kingdom 46 5.5k 1.4× 2.5k 0.8× 2.8k 1.1× 2.2k 1.2× 2.6k 1.5× 311 7.0k
S. Strite United States 23 4.6k 1.1× 3.4k 1.2× 2.5k 0.9× 2.1k 1.1× 2.5k 1.4× 48 6.9k
J. Bläsing Germany 39 3.5k 0.9× 2.8k 0.9× 3.5k 1.3× 2.2k 1.1× 1.2k 0.7× 190 6.2k
S. Einfeldt Germany 39 4.7k 1.2× 2.0k 0.7× 2.6k 0.9× 2.6k 1.4× 1.4k 0.8× 231 5.7k
V. Yu. Davydov Russia 32 4.0k 1.0× 1.7k 0.6× 3.2k 1.2× 2.3k 1.2× 1.7k 0.9× 263 5.8k
Yasushi Nanishi Japan 35 4.3k 1.1× 1.5k 0.5× 2.4k 0.9× 2.6k 1.3× 1.9k 1.1× 228 5.4k
Ramón Collazo United States 43 5.1k 1.3× 2.7k 0.9× 2.5k 0.9× 3.0k 1.6× 1.1k 0.6× 272 6.5k
Kazumasa Hiramatsu Japan 38 6.9k 1.7× 2.3k 0.8× 3.5k 1.3× 3.3k 1.8× 2.2k 1.2× 200 7.7k
S. M. Bedair United States 37 2.4k 0.6× 2.9k 1.0× 2.5k 0.9× 1.4k 0.8× 2.5k 1.4× 253 5.5k
G. Feuillet France 34 2.6k 0.6× 2.0k 0.7× 2.0k 0.7× 1.2k 0.7× 2.1k 1.2× 184 4.4k

Countries citing papers authored by Toshiki Makimōto

Since Specialization
Citations

This map shows the geographic impact of Toshiki Makimōto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshiki Makimōto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshiki Makimōto more than expected).

Fields of papers citing papers by Toshiki Makimōto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toshiki Makimōto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshiki Makimōto. The network helps show where Toshiki Makimōto may publish in the future.

Co-authorship network of co-authors of Toshiki Makimōto

This figure shows the co-authorship network connecting the top 25 collaborators of Toshiki Makimōto. A scholar is included among the top collaborators of Toshiki Makimōto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshiki Makimōto. Toshiki Makimōto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jia, Junjun, et al.. (2022). Revealing the simultaneous increase in transient transmission and reflectivity in InN. Journal of Applied Physics. 132(16). 2 indexed citations
2.
Fujita, Miki, et al.. (2021). Photoluminescence Mechanism in Heavily Si‐Doped GaAsN. Crystal Research and Technology. 56(3).
3.
Hiroki, Masanobu, Kazuhide Kumakura, Yasuyuki Kobayashi, et al.. (2014). Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN. Applied Physics Letters. 105(19). 63 indexed citations
4.
Kobayashi, Yasuyuki, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, & Toshiki Makimōto. (2012). Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. RePEc: Research Papers in Economics. 112(329). 7–7. 1 indexed citations
5.
Kobayashi, Yasuyuki, Hiroki Hibino, Tomohiro Nakamura, et al.. (2007). Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 46(4S). 2554–2554. 13 indexed citations
6.
Nishikawa, Atsushi, Kazuhide Kumakura, Tetsuya Akasaka, & Toshiki Makimōto. (2006). p-InGaN/n-GaN Vertical Conducting Diodes on n+-SiC Substrate for High Power Electronic Device Applications. Japanese Journal of Applied Physics. 45(4S). 3387–3387. 2 indexed citations
7.
Taniyasu, Yoshitaka, Makoto Kasu, & Toshiki Makimōto. (2006). Increased electron mobility in n-type Si-doped AlN by reducing dislocation density. Applied Physics Letters. 89(18). 82 indexed citations
8.
Kobayashi, Yasuyuki, T. Nakamura, Tetsuya Akasaka, Toshiki Makimōto, & N. Matsumoto. (2006). Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy. Journal of Crystal Growth. 298. 325–327. 32 indexed citations
9.
Taniyasu, Yoshitaka, Makoto Kasu, & Toshiki Makimōto. (2006). An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature. 441(7091). 325–328. 1479 indexed citations breakdown →
10.
Makimōto, Toshiki. (2004). Novel nitride semiconductor devices. NTT technical review. 2(6). 12–18. 5 indexed citations
11.
Nishida, Toshio, Tomoyuki Ban, Hisao Saito, Naoki Kobayashi, & Toshiki Makimōto. (2004). High-power extraction of 340- to 350-nm UV LEDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5359. 387–387. 1 indexed citations
12.
Matsuoka, Takashi, et al.. (2004). MOVPE growth and photoluminescence of wurtzite InN. Journal of Crystal Growth. 269(1). 139–144. 12 indexed citations
13.
Kumakura, Kazuhide, Toshiki Makimōto, Nobuhiko P. Kobayashi, et al.. (2004). Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors. 80. 49–50. 2 indexed citations
14.
Kumakura, Kazuhide, Toshiki Makimōto, & Nobuhiko P. Kobayashi. (2001). Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer. physica status solidi (a). 188(1). 363–366. 7 indexed citations
15.
Makimōto, Toshiki, Kazuhide Kumakura, & Naoki Kobayashi. (2000). Reduced damage of electron cyclotron resonance etching by In doping into p-GaN. Journal of Crystal Growth. 221(1-4). 350–355. 28 indexed citations
16.
Saito, Hisao, Toshiki Makimōto, & Naoki Kobayashi Naoki Kobayashi. (1996). Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine. Japanese Journal of Applied Physics. 35(12B). L1644–L1644. 20 indexed citations
17.
Kobayashi, Naoki, Toshiki Makimōto, Yoshiharu Yamauchi, & Yoshiji Horíkoshi. (1990). Investigation of growth processes in flow-rate modulation epitaxy and atomic layer epitaxy by new in-situ optical monitoring method. 139–145. 2 indexed citations
18.
Kobayashi, Naoki, Toshiki Makimōto, Yoshiharu Yamauchi, & Yoshiji Horíkoshi. (1989). Flow-rate modulation epitaxy of GaAs and AlGaAs. Journal of Applied Physics. 66(2). 640–651. 31 indexed citations
19.
Kobayashi, Naoki, Toshiki Makimōto, & Yoshiji Horíkoshi. (1986). Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy. Japanese Journal of Applied Physics. 25(9A). L746–L746. 46 indexed citations
20.
Kobayashi, Naoki & Toshiki Makimōto. (1985). Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs. Japanese Journal of Applied Physics. 24(10A). L824–L824. 50 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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