J. P. Faurie

3.9k total citations
156 papers, 3.1k citations indexed

About

J. P. Faurie is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. P. Faurie has authored 156 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 135 papers in Electrical and Electronic Engineering, 116 papers in Atomic and Molecular Physics, and Optics and 58 papers in Materials Chemistry. Recurrent topics in J. P. Faurie's work include Semiconductor Quantum Structures and Devices (110 papers), Advanced Semiconductor Detectors and Materials (90 papers) and Chalcogenide Semiconductor Thin Films (74 papers). J. P. Faurie is often cited by papers focused on Semiconductor Quantum Structures and Devices (110 papers), Advanced Semiconductor Detectors and Materials (90 papers) and Chalcogenide Semiconductor Thin Films (74 papers). J. P. Faurie collaborates with scholars based in France, United States and Germany. J. P. Faurie's co-authors include E. Tournié, S. Sivananthan, S. Sivananthan, C. Hsu, M. Boukerche, R. Sporken, B. Beaumont, P. Gibart, M. Laügt and M. D. Lange and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. P. Faurie

154 papers receiving 3.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. P. Faurie France 33 2.5k 1.8k 1.4k 541 370 156 3.1k
S. Oktyabrsky United States 25 1.9k 0.8× 958 0.5× 1.2k 0.8× 453 0.8× 458 1.2× 192 2.7k
J. Antoszewski Australia 25 2.7k 1.1× 1.6k 0.9× 962 0.7× 298 0.6× 327 0.9× 164 3.3k
J. F. Schetzina United States 34 3.2k 1.3× 2.3k 1.3× 2.0k 1.4× 1.1k 2.0× 638 1.7× 204 4.3k
F.D. Auret South Africa 31 3.0k 1.2× 1.7k 1.0× 1.5k 1.0× 759 1.4× 885 2.4× 285 4.0k
А. R. Peaker United Kingdom 31 3.5k 1.4× 2.1k 1.2× 1.2k 0.8× 245 0.5× 195 0.5× 279 4.0k
I. J. Fritz United States 32 1.8k 0.7× 2.1k 1.2× 1.2k 0.8× 312 0.6× 301 0.8× 128 3.0k
H. G. Grimmeiss Sweden 31 2.9k 1.2× 2.4k 1.3× 1.4k 1.0× 351 0.6× 175 0.5× 193 3.7k
D. J. Olego United States 30 2.2k 0.9× 2.1k 1.2× 1.5k 1.1× 312 0.6× 174 0.5× 77 3.2k
G. Bahir Israel 27 1.7k 0.7× 1.5k 0.8× 788 0.5× 906 1.7× 574 1.6× 132 2.7k
J. C. Bean United States 27 3.1k 1.2× 2.5k 1.4× 1.5k 1.1× 309 0.6× 211 0.6× 67 4.0k

Countries citing papers authored by J. P. Faurie

Since Specialization
Citations

This map shows the geographic impact of J. P. Faurie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. P. Faurie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. P. Faurie more than expected).

Fields of papers citing papers by J. P. Faurie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. P. Faurie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. P. Faurie. The network helps show where J. P. Faurie may publish in the future.

Co-authorship network of co-authors of J. P. Faurie

This figure shows the co-authorship network connecting the top 25 collaborators of J. P. Faurie. A scholar is included among the top collaborators of J. P. Faurie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. P. Faurie. J. P. Faurie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sharma, Rajesh, J. Torres, P. Nouvel, et al.. (2013). Terahertz transmission and effective gain measurement of two-dimensional electron gas. physica status solidi (a). 210(7). 1454–1458. 2 indexed citations
2.
Pau, J. L., E. Muñoz, E. Calleja, et al.. (2004). Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet. Journal of Applied Physics. 95(12). 8275–8279. 33 indexed citations
3.
Pagès, O., D. Bormann, C. Chauvet, et al.. (2002). Raman study of Zn1−xBexSe/GaAs systems with low Be content (x⩽0.20). Journal of Applied Physics. 91(11). 9187–9197. 14 indexed citations
4.
Xin, Yan, E. M. James, I. Arslan, et al.. (2000). Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films. Applied Physics Letters. 76(4). 466–468. 55 indexed citations
5.
Chauvet, C., et al.. (2000). Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties. Journal of Electronic Materials. 29(6). 883–886. 4 indexed citations
6.
Monroy, E., et al.. (2000). Time response analysis of ZnSe-based Schottky barrier photodetectors. Applied Physics Letters. 77(17). 2761–2763. 34 indexed citations
7.
Yan, Xin, Nigel D. Browning, S. J. Pennycook, et al.. (1999). Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM. Journal of Electronic Materials. 28(7). 1081.
8.
Bousquet, V., M. Laügt, P. Vennéguès, E. Tournié, & J. P. Faurie. (1999). Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer. Journal of Crystal Growth. 201-202. 498–501. 4 indexed citations
9.
Tournié, E., V. Bousquet, & J. P. Faurie. (1999). Molecular-beam epitaxy of BeTe layers on GaAs substrates. Journal of Crystal Growth. 201-202. 494–497. 1 indexed citations
10.
Chauvet, C., P. Vennéguès, Paul Brunet, E. Tournié, & J. P. Faurie. (1998). Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces. Applied Physics Letters. 73(7). 957–959. 19 indexed citations
11.
Deleporte, Emmauelle, Arianna Filoramo, Ph. Lelong, et al.. (1998). Band offset determination of the Zn1−xCdxSe/ZnSe interface. Journal of Crystal Growth. 184-185. 839–843. 5 indexed citations
12.
Bousquet, V., et al.. (1997). (001) GaAs substrate preparation for direct ZnSe heteroepitaxy. Journal of Applied Physics. 81(10). 7012–7017. 10 indexed citations
13.
Tournié, E., C. Morhain, G. Neu, et al.. (1996). Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization. Journal of Applied Physics. 80(5). 2983–2989. 30 indexed citations
14.
Rodricks, Brian, et al.. (1996). Synchrotron X-Ray photoconductor detector arrays made on MBE grown CdTe. Journal of Electronic Materials. 25(8). 1306–1311. 1 indexed citations
15.
Sivananthan, S., et al.. (1990). Stimulated emission from a Hg 1 - x Cd x Te epilayer and CdTe/Hg 1 - x Cd x Te heterostructures grown by molecular beam epitaxy. 8(2). 1210–1214. 2 indexed citations
16.
Sivananthan, S., et al.. (1990). Stimulated emission from a Hg1−xCdxTe epilayer and CdTe/Hg1−xCdxTe heterostructures grown by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(2). 1210–1214. 10 indexed citations
17.
Hsu, Chia‐Chi & J. P. Faurie. (1988). Summary Abstract: Valence band discontinuities at the heterojunctions between CdTe, ZnTe, and HgTe in the (100) orientation: X-ray photoelectron spectroscopy study. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 773–774. 11 indexed citations
18.
Sivananthan, S., Xue‐Qiang Chu, & J. P. Faurie. (1987). Dependence of the condensation coefficient of Hg on the orientation and the stability of the Hg–Te bond for the growth of Hg1−xMxTe (M=Cd, Mn, Zn). Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(3). 694–698. 7 indexed citations
19.
Boukerche, M., P. S. Wijewarnasuriya, J. Reno, I. K. Sou, & J. P. Faurie. (1986). Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2072–2076. 16 indexed citations
20.
Sivananthan, S., et al.. (1986). Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe. Applied Physics Letters. 49(3). 152–154. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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