D. Gogova

5.0k citations

136 papers · 4.2k indexed · h-index 41

Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials 51
Materials Chemistry top 1%
- ZnO doping and properties 48
- 2D Materials and Applications 21
Renewable Energy, Sustainability and the Environment top 2%
- Advanced Photocatalysis Techniques 19
Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 44
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 28
- Gas Sensing Nanomaterials and Sensors 13
Polymers and Plastics
- Transition Metal Oxide Nanomaterials 16

Co-authors: A. Bafekry Mitra Ghergherehchi Mehrdad Faraji Mohamed M. Fadlallah M. Schmidbauer M. Albrecht M. Baldini Hamad Rahman Jappor
Cited by: Electronic, Optical and Magnetic Materials Materials Chemistry Renewable Energy, Sustainability and the Environment
Journals: Journal of Crystal Growth (11 papers)Superlattices and Microstructures (8 papers)Journal of Applied Physics (7 papers)
Partner nations: Bulgaria Germany Sweden

In The Last Decade

D. Gogova

134 papers receiving 4.1k citations

Peers

Countries citing papers authored by D. Gogova

Since Specialization

Citations

This map shows the geographic impact of D. Gogova's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Gogova with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Gogova more than expected).

Fields of papers citing papers by D. Gogova

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Gogova. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Gogova. The network helps show where D. Gogova may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Gogova, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Gogova Line = papers co-authored together D. Gogova links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation on the structural and electronic property of monoclinic Al2O3/β-Ga2O3 superlattice with varying layer periods Applied Physics Letters ·Nan Chun-a,Reetika Singh and Nishi Kumari,申芝愛,Guofeng Hu,Weihua Tang,Guosong Zeng,D. Gogova,Chee‐Keong Tan	2025	1
2	Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies Journal of Applied Physics ·Ken Goto,Frances H. Coker,M. Schubert,D. Gogova,Vanya Darakchieva	2025	0
3	Effective uniaxial dielectric function tensor and optical phonons in (2¯01)-oriented β-Ga2O3 films with equally distributed sixfold-rotation domains Physical Review Applied ·A. Mock,Steffen Richter,B. Servin,V. Stanishev,Lauri Aksalu,Jawad Ul‐Hassan,Andreas Popp,Saud Bin Anooz,D. Gogova,Praneeth Ranga,Sriram Krishnamoorthy,Rafał Korlacki,M. Schubert,Vanya Darakchieva	2024	2
4	High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. Gogova,Bayram Koca,V. Stanishev,Valdas Jokubavičius,Lasse Vines,M. Schubert,Rositsa Yakimova,T. Paskova,Vanya Darakchieva	2024	13
5	Long-lived excitons in thermally annealed hydrothermal ZnO Heliyon ·Patrik Ščajev,D. Gogova	2024	4
6	Epitaxial growth of β-Ga2O3 by hot-wall MOCVD AIP Advances ·D. Gogova,Lauri Aksalu,Bayram Koca,Steffen Richter,B. Servin,Jawad Ul‐Hassan,Axel R. Persson,Per O. Å. Persson,Olof Kordina,Bo Monemar,W. E. Murr,M. Schubert,T. Paskova,Vanya Darakchieva	2022	29
7	Ion implantation in β-Ga2O3: Physics and technology Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. Rohlmann,Patricia Martín Blanco,Д. С. Королев,T.E. Reich,Shuyue Tan,Alexey Mikhaylov,D. I. Tetelbaum,А. V. Аlmaev,Denise S. Hawk,Ely Noel Diallo,R. Giulian,P. L. Grande,Ashok Kumar,Mahesh Kumar,D. Gogova	2021	60
8	A new plasma-based approach to hydrogen intercalation of graphene Superlattices and Microstructures ·A. V. Vodopyanov,María del Pilar Sandoval Ruíz,А. В. Нежданов,Mariya Zorina,А. И. Машин,Rositsa Yakimova,D. Gogova	2021	1
9	Surface modification of titanium carbide MXene monolayers (Ti₂C and Ti₃C₂) via chalcogenide and halogenide atoms Physical Chemistry Chemical Physics ·Mehrdad Faraji,A. Bafekry,Mohamed M. Fadlallah,Fatemeh Molaei,Nguyen N. Hieu,Ping Qian,Mitra Ghergherehchi,D. Gogova	2021	77
10	Prediction of two-dimensional bismuth-based chalcogenides Bi ₂ X ₃ (X = S, Se, Te) monolayers with orthorhombic structure: a first-principles study Journal of Physics D Applied Physics ·A. Bafekry,Mehrdad Faraji,Mohamed M. Fadlallah,Hamad Rahman Jappor,Nguyen N. Hieu,Mitra Ghergherehchi,S. A. H. Feghhi,D. Gogova	2021	48
11	Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: a first-principles study Journal of Physics Condensed Matter ·A. Bafekry,Mehrdad Faraji,Mohamed M. Fadlallah,Hamad Rahman Jappor,S. Karbasizadeh,Mitra Ghergherehchi,D. Gogova	2021	99
12	Investigation of vacancy defects and substitutional doping in AlSb monolayer with double layer honeycomb structure: a first-principles calculation Journal of Physics Condensed Matter ·A. Bafekry,Mehrdad Faraji,S. Karbasizadeh,Hamad Rahman Jappor,I. Abdolhosseini Sarsari,Mitra Ghergherehchi,D. Gogova	2021	57
13	First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate Physical Chemistry Chemical Physics ·Mohammed M. Obeid,Catherine Stampfl,A. Bafekry,Zhaoyong Guan,Hamad Rahman Jappor,Chuong V. Nguyen,Mosayeb Naseri,D.M. Hoat,Nguyen N. Hieu,Andrey E. Krauklis,Tuan V. Vu,D. Gogova	2020	88
14	Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga₂O₃ (Mg) ECS Journal of Solid State Science and Technology ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,S. J. Pearton,F. Ren,А. В. Черных,D. Gogova,А. I. Kochkova	2019	47
15	Infrared and Raman spectroscopy study of As S chalcogenide films prepared by plasma-enhanced chemical vapor deposition Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ·Leonid Mochalov,Dominik Dorosz,Mikhail Kudryashov,А. В. Нежданов,Д. А. Усанов,D. Gogova,С. В. Зеленцов,Sarah L. Grinnell,А. И. Машин	2017	14
16	Investigation of the composition-structure-property relationship of AsxTe100x films prepared by plasma deposition Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ·Leonid Mochalov,Dominik Dorosz,А. В. Нежданов,Mikhail Kudryashov,С. В. Зеленцов,Д. А. Усанов,Alexander Logunov,А. И. Машин,D. Gogova	2017	37
17	Electrical compensation by Ga vacancies in Ga2O3 thin films Applied Physics Letters ·E. Korhonen,Filip Tuomisto,D. Gogova,G. Wagner,M. Baldini,Zbigniew Galazka,Robert Schewski,M. Albrecht	2015	166
18	Homoepitaxial growth of β‐Ga₂O₃ layers by metal‐organic vapor phase epitaxy physica status solidi (a) ·Jonathan Cristian Wijaya,M. Baldini,D. Gogova,M. Schmidbauer,Robert Schewski,M. Albrecht,Zbigniew Galazka,Detlef Klimm,R. Fornari	2013	172
19	Aligned AlN nanowires by self-organized vapor–solid growth Nanotechnology ·G. Reza Yazdi,Per O. Å. Persson,D. Gogova,R. Fornari,Lars Hultman,Mikael Syväjärvi,Rositsa Yakimova	2009	46
20	Large-area free-standing GaN substrate grown by hydride vapor phase epitaxy on epitaxial lateral overgrown GaN template Physica B Condensed Matter ·D. Gogova,E. Talik,Ivan G. Ivanov,B. Monemar	2005	12

About D. Gogova

D. Gogova is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment and Polymers and Plastics, having authored 136 papers that have together received 4.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (51 papers), ZnO doping and properties (48 papers), GaN-based semiconductor devices and materials (44 papers), Semiconductor materials and devices (28 papers), 2D Materials and Applications (21 papers), Advanced Photocatalysis Techniques (19 papers), Transition Metal Oxide Nanomaterials (16 papers) and Gas Sensing Nanomaterials and Sensors (13 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (1.9k citations), Materials Chemistry (3.4k citations), Renewable Energy, Sustainability and the Environment (1.1k citations), Condensed Matter Physics (625 citations) and Electrical and Electronic Engineering (1.6k citations). D. Gogova has collaborated with scholars based in Bulgaria, Germany and Sweden. Frequent co-authors include A. Bafekry, Mitra Ghergherehchi, Mehrdad Faraji, Mohamed M. Fadlallah, M. Schmidbauer, M. Albrecht, M. Baldini, Hamad Rahman Jappor, Robert Schewski and Zbigniew Galazka. Their work appears in journals such as Journal of Crystal Growth, Superlattices and Microstructures, Journal of Applied Physics, Physical Chemistry Chemical Physics and Applied Surface Science.

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