Hemant Ghadi

897 total citations
64 papers, 663 citations indexed

About

Hemant Ghadi is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hemant Ghadi has authored 64 papers receiving a total of 663 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Materials Chemistry, 41 papers in Electrical and Electronic Engineering and 30 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hemant Ghadi's work include Semiconductor Quantum Structures and Devices (29 papers), ZnO doping and properties (28 papers) and Ga2O3 and related materials (25 papers). Hemant Ghadi is often cited by papers focused on Semiconductor Quantum Structures and Devices (29 papers), ZnO doping and properties (28 papers) and Ga2O3 and related materials (25 papers). Hemant Ghadi collaborates with scholars based in India, United States and France. Hemant Ghadi's co-authors include Subhananda Chakrabarti, Binita Tongbram, Aaron R. Arehart, Joe F. McGlone, Hongping Zhao, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Sourav Adhikary, Sushil Pandey and Steven A. Ringel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Sensors and Actuators B Chemical.

In The Last Decade

Hemant Ghadi

58 papers receiving 652 citations

Peers

Hemant Ghadi
Yulei Han China
Hemant Ghadi
Citations per year, relative to Hemant Ghadi Hemant Ghadi (= 1×) peers Yulei Han

Countries citing papers authored by Hemant Ghadi

Since Specialization
Citations

This map shows the geographic impact of Hemant Ghadi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hemant Ghadi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hemant Ghadi more than expected).

Fields of papers citing papers by Hemant Ghadi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hemant Ghadi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hemant Ghadi. The network helps show where Hemant Ghadi may publish in the future.

Co-authorship network of co-authors of Hemant Ghadi

This figure shows the co-authorship network connecting the top 25 collaborators of Hemant Ghadi. A scholar is included among the top collaborators of Hemant Ghadi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hemant Ghadi. Hemant Ghadi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ghadi, Hemant, Joe F. McGlone, Lingyu Meng, et al.. (2025). Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3. APL Materials. 13(9).
2.
Ghadi, Hemant, Joe F. McGlone, Shivam Sharma, et al.. (2024). Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods. APL Materials. 12(9). 2 indexed citations
3.
Ghadi, Hemant, Joe F. McGlone, Shivam Sharma, et al.. (2023). Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies. APL Materials. 11(11). 13 indexed citations
4.
McGlone, Joe F., Hemant Ghadi, Andrew Armstrong, et al.. (2023). Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3. Journal of Applied Physics. 133(4). 27 indexed citations
5.
Ghadi, Hemant, Joe F. McGlone, Zixuan Feng, et al.. (2022). Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3. APL Materials. 10(10). 12 indexed citations
6.
Ghadi, Hemant, Joe F. McGlone, Zixuan Feng, et al.. (2020). Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga2O3. Applied Physics Letters. 117(17). 31 indexed citations
7.
Ghadi, Hemant, et al.. (2020). Improving optical properties and controlling defect-bound states in ZnMgO thin films through ultraviolet–ozone annealing. Thin Solid Films. 708. 138112–138112. 10 indexed citations
8.
Ghadi, Hemant, Joe F. McGlone, Christine M. Jackson, et al.. (2020). Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition. APL Materials. 8(2). 67 indexed citations
9.
Ghadi, Hemant, et al.. (2020). Zinc Magnesium Oxide-Based Nanorods for High-Precision pH Sensing. IEEE Sensors Journal. 20(9). 4587–4594. 1 indexed citations
10.
Ghadi, Hemant, Debabrata Das, Debiprasad Panda, et al.. (2019). High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model. Journal of Alloys and Compounds. 804. 18–26. 11 indexed citations
11.
Ghosh, Anupam, et al.. (2019). InN Nanowires Based Near-Infrared Broadband Optical Detector. IEEE Photonics Technology Letters. 31(18). 1526–1529. 5 indexed citations
12.
Ghadi, Hemant, Debabrata Das, Prabhat Kumar Singh, et al.. (2018). Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model. Journal of Alloys and Compounds. 751. 337–348. 8 indexed citations
13.
Ghosh, Anupam, Hemant Ghadi, P. Chinnamuthu, et al.. (2018). Oblique angle deposited InN quantum dots array for infrared detection. Journal of Alloys and Compounds. 766. 297–304. 11 indexed citations
14.
Ghadi, Hemant, et al.. (2018). Effects of phosphorus implantation time on the optical, structural, and elemental properties of ZnO thin films and its correlation with the 3.31-eV peak. Journal of Alloys and Compounds. 768. 800–809. 17 indexed citations
15.
Ghadi, Hemant, et al.. (2017). Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection. Journal of Alloys and Compounds. 722. 872–877. 7 indexed citations
16.
Panda, Debiprasad, et al.. (2017). Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition. Materials Science in Semiconductor Processing. 60. 40–44. 21 indexed citations
17.
Ghadi, Hemant, et al.. (2017). Enhancement in optical characteristics of c-axis-oriented radio frequency–sputtered ZnO thin films through growth ambient and annealing temperature optimization. Materials Science in Semiconductor Processing. 66. 1–8. 26 indexed citations
18.
19.
Ghadi, Hemant, et al.. (2015). Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots. IEEE Transactions on Nanotechnology. 14(4). 603–607. 8 indexed citations
20.
Mandal, Ajay, Hemant Ghadi, Debjit Pal, et al.. (2015). Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer. Journal of Luminescence. 161. 129–134. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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