Chandan Joishi

1.7k total citations
45 papers, 1.4k citations indexed

About

Chandan Joishi is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Chandan Joishi has authored 45 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electronic, Optical and Magnetic Materials, 27 papers in Materials Chemistry and 17 papers in Electrical and Electronic Engineering. Recurrent topics in Chandan Joishi's work include Ga2O3 and related materials (32 papers), ZnO doping and properties (26 papers) and Electronic and Structural Properties of Oxides (17 papers). Chandan Joishi is often cited by papers focused on Ga2O3 and related materials (32 papers), ZnO doping and properties (26 papers) and Electronic and Structural Properties of Oxides (17 papers). Chandan Joishi collaborates with scholars based in United States, India and Singapore. Chandan Joishi's co-authors include Siddharth Rajan, Zhanbo Xia, Yuewei Zhang, Saurabh Lodha, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Joe F. McGlone, Sanyam Bajaj and Sriram Krishnamoorthy and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chandan Joishi

38 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chandan Joishi United States 15 1.3k 1.3k 586 309 195 45 1.4k
Xuanze Zhou China 21 1.2k 0.9× 1.1k 0.8× 564 1.0× 329 1.1× 148 0.8× 61 1.3k
А. I. Kochkova Russia 17 897 0.7× 852 0.7× 594 1.0× 165 0.5× 53 0.3× 50 934
Zhaoqing Feng China 21 1.1k 0.8× 1.0k 0.8× 513 0.9× 280 0.9× 177 0.9× 36 1.2k
Akhil Mauze United States 21 1.2k 0.9× 1.1k 0.9× 708 1.2× 199 0.6× 117 0.6× 31 1.2k
Keita Konishi Japan 9 1.3k 0.9× 1.2k 1.0× 638 1.1× 237 0.8× 121 0.6× 26 1.3k
Saurav Roy United States 16 771 0.6× 716 0.6× 388 0.7× 172 0.6× 75 0.4× 27 811
Janghyuk Kim South Korea 12 645 0.5× 725 0.6× 313 0.5× 188 0.6× 56 0.3× 13 805
M. Baldini Germany 15 2.4k 1.8× 2.4k 1.9× 1.3k 2.3× 414 1.3× 182 0.9× 28 2.5k
Takeya Okuno Japan 7 1.2k 0.9× 1.2k 0.9× 629 1.1× 265 0.9× 106 0.5× 10 1.3k
Yuncong Cai China 12 636 0.5× 583 0.5× 276 0.5× 153 0.5× 77 0.4× 17 667

Countries citing papers authored by Chandan Joishi

Since Specialization
Citations

This map shows the geographic impact of Chandan Joishi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chandan Joishi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chandan Joishi more than expected).

Fields of papers citing papers by Chandan Joishi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chandan Joishi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chandan Joishi. The network helps show where Chandan Joishi may publish in the future.

Co-authorship network of co-authors of Chandan Joishi

This figure shows the co-authorship network connecting the top 25 collaborators of Chandan Joishi. A scholar is included among the top collaborators of Chandan Joishi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chandan Joishi. Chandan Joishi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Allerman, Andrew A., Chandan Joishi, Brianna Klein, et al.. (2025). Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN. Applied Physics Letters. 126(6). 6 indexed citations
2.
Pratt, Jerry W., John Niroula, Chandan Joishi, et al.. (2025). High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors. ArXiv.org. 1(3).
3.
Joishi, Chandan, Sheikh Ifatur Rahman, Zhanbo Xia, Shahadat H. Sohel, & Siddharth Rajan. (2025). Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts. SHILAP Revista de lepidopterología. 1(2).
4.
Klein, Brianna, et al.. (2024). Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts. Advanced Materials Interfaces. 12(2). 4 indexed citations
5.
McGlone, Joe F., et al.. (2024). Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors. physica status solidi (RRL) - Rapid Research Letters. 18(8). 1 indexed citations
6.
Joishi, Chandan, Sheikh Ifatur Rahman, & Siddharth Rajan. (2024). Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts. IEEE Transactions on Electron Devices. 71(10). 6460–6464. 1 indexed citations
7.
Kalarickal, Nidhin Kurian, et al.. (2023). β -Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching. Applied Physics Letters. 123(2). 22 indexed citations
8.
Kalarickal, Nidhin Kurian, Hsien‐Lien Huang, Ahmad E. Islam, et al.. (2023). Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3. Applied Physics Letters. 123(8). 4 indexed citations
9.
Joishi, Chandan, et al.. (2023). High Gain Planar Monopole Antenna Having Ultra Wideband Applications. 452–456.
10.
Joishi, Chandan, et al.. (2022). The impact of semiconductor surface states on vacuum field emission. Journal of Applied Physics. 132(16). 1 indexed citations
11.
Joishi, Chandan, Yuewei Zhang, Zhanbo Xia, et al.. (2019). Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors. IEEE Electron Device Letters. 40(8). 1241–1244. 86 indexed citations
12.
Xia, Zhanbo, Hao Xue, Chandan Joishi, et al.. (2019). $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz. IEEE Electron Device Letters. 40(7). 1052–1055. 125 indexed citations
13.
Zhang, Yuewei, Zhanbo Xia, Joe F. McGlone, et al.. (2019). Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors. IEEE Transactions on Electron Devices. 66(3). 1574–1578. 71 indexed citations
14.
McGlone, Joe F., Zhanbo Xia, Chandan Joishi, et al.. (2019). Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs. Applied Physics Letters. 115(15). 47 indexed citations
15.
Joishi, Chandan, Sayantan Ghosh, Narendra Parihar, et al.. (2018). Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeO<italic>x</italic> ILs Using Ultrafast Charge Trap–Detrap Techniques. IEEE Transactions on Electron Devices. 65(10). 4245–4253. 4 indexed citations
16.
McGlone, Joe F., Zhanbo Xia, Yuewei Zhang, et al.. (2018). Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate. IEEE Electron Device Letters. 39(7). 1042–1045. 88 indexed citations
17.
Pratiyush, Anamika Singh, Zhanbo Xia, Sandeep Kumar, et al.. (2018). MBE-Grown <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107. IEEE Photonics Technology Letters. 30(23). 2025–2028. 71 indexed citations
18.
Joishi, Chandan, Zhanbo Xia, Joe F. McGlone, et al.. (2018). Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors. Applied Physics Letters. 113(12). 50 indexed citations
19.
Zhang, Yuewei, Zhanbo Xia, Chandan Joishi, & Siddharth Rajan. (2018). Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). 1–2. 4 indexed citations
20.
Zhang, Yuewei, Adam T. Neal, Zhanbo Xia, et al.. (2018). Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures. Applied Physics Letters. 112(17). 281 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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