Yuewei Zhang

4.4k total citations
70 papers, 3.0k citations indexed

About

Yuewei Zhang is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Yuewei Zhang has authored 70 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electronic, Optical and Magnetic Materials, 42 papers in Materials Chemistry and 30 papers in Condensed Matter Physics. Recurrent topics in Yuewei Zhang's work include Ga2O3 and related materials (51 papers), ZnO doping and properties (36 papers) and GaN-based semiconductor devices and materials (30 papers). Yuewei Zhang is often cited by papers focused on Ga2O3 and related materials (51 papers), ZnO doping and properties (36 papers) and GaN-based semiconductor devices and materials (30 papers). Yuewei Zhang collaborates with scholars based in United States, India and China. Yuewei Zhang's co-authors include Siddharth Rajan, James S. Speck, Akhil Mauze, Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, Fatih Akyol, Saurabh Lodha, A. Osinsky and Fikadu Alema and has published in prestigious journals such as Angewandte Chemie International Edition, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yuewei Zhang

69 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yuewei Zhang United States 34 2.5k 2.3k 1.1k 946 768 70 3.0k
Xuanhu Chen China 29 2.4k 1.0× 2.3k 1.0× 1.1k 1.0× 644 0.7× 636 0.8× 51 3.0k
Wenxiang Mu China 27 1.8k 0.7× 1.8k 0.8× 931 0.8× 153 0.2× 705 0.9× 100 2.2k
C. X. Shan China 30 1.6k 0.6× 2.1k 0.9× 234 0.2× 274 0.3× 1.3k 1.6× 57 2.4k
Xiaoye Qin United States 18 428 0.2× 1.8k 0.8× 207 0.2× 379 0.4× 1.2k 1.5× 34 2.2k
Peigang Li China 38 4.3k 1.7× 4.3k 1.9× 2.2k 2.0× 448 0.5× 1.3k 1.7× 104 4.8k
Hiroyuki Nishinaka Japan 26 1.5k 0.6× 2.0k 0.9× 755 0.7× 131 0.1× 1.0k 1.3× 88 2.3k
Toshiyuki Kawaharamura Japan 25 1.3k 0.5× 2.2k 1.0× 456 0.4× 125 0.1× 1.4k 1.8× 101 2.5k
Shinji Nakagomi Japan 20 1.8k 0.7× 1.9k 0.8× 987 0.9× 178 0.2× 695 0.9× 62 2.2k
Xiaoding Qi Taiwan 24 2.0k 0.8× 2.3k 1.0× 90 0.1× 551 0.6× 766 1.0× 85 2.9k
Takekazu Masui Japan 26 7.4k 3.0× 7.2k 3.2× 3.8k 3.4× 604 0.6× 1.3k 1.7× 37 7.6k

Countries citing papers authored by Yuewei Zhang

Since Specialization
Citations

This map shows the geographic impact of Yuewei Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuewei Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuewei Zhang more than expected).

Fields of papers citing papers by Yuewei Zhang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuewei Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuewei Zhang. The network helps show where Yuewei Zhang may publish in the future.

Co-authorship network of co-authors of Yuewei Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of Yuewei Zhang. A scholar is included among the top collaborators of Yuewei Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuewei Zhang. Yuewei Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zheng, Xue, et al.. (2025). In situ albumin tagging for targeted imaging of endothelial barrier disruption. Science Advances. 11(7). eads4412–eads4412. 4 indexed citations
2.
Korlacki, Rafał, Akhil Mauze, Yuewei Zhang, et al.. (2022). Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010). Physical Review Applied. 18(6). 6 indexed citations
3.
Zollner, Christian J., Bastien Bonef, Yifan Yao, et al.. (2021). High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters. Optics Express. 29(25). 40781–40781. 9 indexed citations
4.
Zhang, Yuewei, Akhil Mauze, Fikadu Alema, et al.. (2020). β -Ga 2 O 3 lateral transistors with high aspect ratio fin-shape channels. Japanese Journal of Applied Physics. 60(1). 14001–14001. 9 indexed citations
5.
Zhang, Yuewei & James S. Speck. (2020). Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices. Semiconductor Science and Technology. 35(12). 125018–125018. 33 indexed citations
6.
Li, Panpan, Haojun Zhang, Hongjian Li, et al.. (2020). Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage. Semiconductor Science and Technology. 35(12). 125023–125023. 26 indexed citations
7.
Alema, Fikadu, Yuewei Zhang, Akhil Mauze, et al.. (2020). H2O vapor assisted growth of β-Ga2O3 by MOCVD. AIP Advances. 10(8). 34 indexed citations
8.
Itoh, Takeki, Akhil Mauze, Yuewei Zhang, & James S. Speck. (2020). Epitaxial growth of β -Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 117(15). 23 indexed citations
9.
Joishi, Chandan, Yuewei Zhang, Zhanbo Xia, et al.. (2019). Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors. IEEE Electron Device Letters. 40(8). 1241–1244. 86 indexed citations
10.
Neal, Adam T., Yuewei Zhang, S. Elhamri, Siddharth Rajan, & Shin Mou. (2019). Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas. Applied Physics Letters. 115(26). 2 indexed citations
11.
Mock, A., Vanya Darakchieva, Sean Knight, et al.. (2019). Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β -(AlxGa1–x)2O3 (x ≤ 0.21) films. Applied Physics Letters. 114(23). 27 indexed citations
12.
Zhang, Yuewei, Zhanbo Xia, Joe F. McGlone, et al.. (2019). Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors. IEEE Transactions on Electron Devices. 66(3). 1574–1578. 71 indexed citations
13.
Zhang, Yuewei, Akhil Mauze, & James S. Speck. (2019). Anisotropic etching of β-Ga2O3 using hot phosphoric acid. Applied Physics Letters. 115(1). 66 indexed citations
14.
Zhang, Yuewei, et al.. (2019). Recent progress of tunnel junction-based ultra-violet light emitting diodes. Japanese Journal of Applied Physics. 58(SC). SC0805–SC0805. 22 indexed citations
15.
McGlone, Joe F., Zhanbo Xia, Yuewei Zhang, et al.. (2018). Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate. IEEE Electron Device Letters. 39(7). 1042–1045. 88 indexed citations
16.
Pratiyush, Anamika Singh, Zhanbo Xia, Sandeep Kumar, et al.. (2018). MBE-Grown <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107. IEEE Photonics Technology Letters. 30(23). 2025–2028. 71 indexed citations
17.
Joishi, Chandan, Zhanbo Xia, Joe F. McGlone, et al.. (2018). Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors. Applied Physics Letters. 113(12). 50 indexed citations
18.
Zhang, Yuewei, Zhanbo Xia, Chandan Joishi, & Siddharth Rajan. (2018). Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). 1–2. 4 indexed citations
19.
Bajaj, Sanyam, Andrew A. Allerman, Andrew Armstrong, et al.. (2017). High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm. IEEE Electron Device Letters. 39(2). 256–259. 51 indexed citations
20.
Zhang, Yuewei, Xinqiang Wang, Xiantong Zheng, et al.. (2013). Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films. Applied Physics Express. 6(2). 21001–21001. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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