Jeramy Ray Dickerson

813 total citations
33 papers, 665 citations indexed

About

Jeramy Ray Dickerson is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jeramy Ray Dickerson has authored 33 papers receiving a total of 665 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 29 papers in Electrical and Electronic Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jeramy Ray Dickerson's work include GaN-based semiconductor devices and materials (29 papers), Silicon Carbide Semiconductor Technologies (21 papers) and Semiconductor materials and devices (18 papers). Jeramy Ray Dickerson is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Silicon Carbide Semiconductor Technologies (21 papers) and Semiconductor materials and devices (18 papers). Jeramy Ray Dickerson collaborates with scholars based in United States and France. Jeramy Ray Dickerson's co-authors include Robert Kaplar, Andrew A. Allerman, Andrew Armstrong, Mary H. Crawford, A. J. Fischer, Jonathan J. Wierer, M. King, Michael W. Moseley, Albert G. Baca and Andrew Binder and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

Jeramy Ray Dickerson

33 papers receiving 638 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jeramy Ray Dickerson United States	12	534	450	306	178	85	33	665
Jr‐Tai Chen Sweden	13	469 0.9×	336 0.7×	258 0.8×	186 1.0×	120 1.4×	34	557
Erin C. H. Kyle United States	14	576 1.1×	428 1.0×	364 1.2×	180 1.0×	100 1.2×	17	677
Xuguang Deng China	13	586 1.1×	428 1.0×	430 1.4×	238 1.3×	99 1.2×	38	700
Yuanjie Lv China	13	393 0.7×	261 0.6×	318 1.0×	235 1.3×	98 1.2×	56	537
A. Azizur Rahman India	14	464 0.9×	294 0.7×	277 0.9×	292 1.6×	106 1.2×	33	620
Joseph J. Freedsman Japan	14	442 0.8×	374 0.8×	286 0.9×	124 0.7×	64 0.8×	21	493
Brianna S. Eller United States	8	336 0.6×	331 0.7×	278 0.9×	165 0.9×	83 1.0×	12	486
Will Mecouch United States	10	368 0.7×	313 0.7×	273 0.9×	178 1.0×	89 1.0×	18	505
Dave Bour United States	8	653 1.2×	601 1.3×	312 1.0×	130 0.7×	153 1.8×	10	751
M. Hayden Breckenridge United States	16	506 0.9×	291 0.6×	352 1.2×	165 0.9×	81 1.0×	25	568

Countries citing papers authored by Jeramy Ray Dickerson

Since Specialization

Citations

This map shows the geographic impact of Jeramy Ray Dickerson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jeramy Ray Dickerson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jeramy Ray Dickerson more than expected).

Fields of papers citing papers by Jeramy Ray Dickerson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jeramy Ray Dickerson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jeramy Ray Dickerson. The network helps show where Jeramy Ray Dickerson may publish in the future.

Co-authorship network of co-authors of Jeramy Ray Dickerson

This figure shows the co-authorship network connecting the top 25 collaborators of Jeramy Ray Dickerson. A scholar is included among the top collaborators of Jeramy Ray Dickerson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jeramy Ray Dickerson. Jeramy Ray Dickerson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yates, Luke, Brendan Gunning, Mary H. Crawford, et al.. (2022). Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions. IEEE Transactions on Electron Devices. 69(4). 1931–1937. 44 indexed citations

Flicker, Jack, Jeramy Ray Dickerson, Andrew Binder, et al.. (2022). Analysis of the dependence of critical electric field on semiconductor bandgap. Journal of materials research/Pratt's guide to venture capital sources. 37(4). 849–865. 52 indexed citations

Zeng, Ke, Zhengliang Bian, Bhawani Shankar, et al.. (2022). A discussion on various experimental methods of impact ionization coefficient measurement in GaN. AIP Advances. 12(3). 3 indexed citations

Shankar, Bhawani, Ke Zeng, Brendan Gunning, et al.. (2022). Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. 1–2. 1 indexed citations

Xiao, T. Patrick, Edward S. Bielejec, György Vizkelethy, et al.. (2021). Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose. IEEE Transactions on Nuclear Science. 68(5). 724–732. 17 indexed citations

Shankar, Bhawani, Ke Zeng, Brendan Gunning, et al.. (2021). On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 40–43. 1 indexed citations

Binder, Andrew, Andrew A. Allerman, Jeramy Ray Dickerson, et al.. (2021). Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 288–292. 10 indexed citations

Binder, Andrew, Gregory Pickrell, Andrew A. Allerman, et al.. (2021). Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

Binder, Andrew, Jeramy Ray Dickerson, Mary H. Crawford, et al.. (2019). Bevel Edge Termination for Vertical GaN Power Diodes. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 281–285. 10 indexed citations

10.

Choi, Sukwon, Sandeepan DasGupta, Jeramy Ray Dickerson, et al.. (2017). Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime. IEEE Transactions on Electron Devices. 64(9). 3740–3747. 13 indexed citations

11.

King, M., Robert Kaplar, Jeramy Ray Dickerson, et al.. (2016). Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes. Applied Physics Letters. 109(18). 11 indexed citations

12.

Léonard, François, Jeramy Ray Dickerson, M. King, et al.. (2016). In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes. IEEE Electron Device Letters. 1–1. 3 indexed citations

13.

Armstrong, Andrew, Andrew A. Allerman, A. J. Fischer, et al.. (2016). High voltage and high current density vertical GaN power diodes. Electronics Letters. 52(13). 1170–1171. 63 indexed citations

14.

Flicker, Jack, et al.. (2016). Module-level paralleling of vertical GaN PiN diodes. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 139–142. 1 indexed citations

15.

Dickerson, Jeramy Ray, Andrew A. Allerman, Arthur Fischer, et al.. (2015). Vertical GaN Power Diodes With a Bilayer Edge Termination. IEEE Transactions on Electron Devices. 63(1). 419–425. 103 indexed citations

16.

Kaplar, Robert, Jeramy Ray Dickerson, Sandeepan DasGupta, et al.. (2014). Impact of gate stack on the stability of normally-Off AlGaN/GaN power switching HEMTs. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 48. 209–212. 1 indexed citations

17.

Ray, L. C., Rongming Chu, Daniel Zehnder, et al.. (2014). Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). CD.4.1–CD.4.9. 4 indexed citations

18.

Dickerson, Jeramy Ray, et al.. (2013). Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells. IEEE Electron Device Letters. 34(3). 363–365. 9 indexed citations

19.

Dickerson, Jeramy Ray, et al.. (2013). Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers. Optical and Quantum Electronics. 45(7). 681–686. 3 indexed citations

20.

Boucherit, Mohamed Seghir, A. Soltani, S. Gautier, et al.. (2012). Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors. Applied Physics Letters. 100(24). 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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