Daniel Feezell

4.6k citations

113 papers · 3.8k indexed · 2 hit papers · h-index 34

Condensed Matter Physics top 0.2%
Atomic and Molecular Physics, and Optics top 1%
Electrical and Electronic Engineering top 2%
Materials Chemistry top 5%
Electronic, Optical and Magnetic Materials top 2%

Co-authors: Shuji Nakamura Steven P. DenBaars James S. Speck Morteza Monavarian Ashwin K. Rishinaramangalam Arman Rashidi Kenji Fujito Mohsen Nami
Topics: GaN-based semiconductor devices and materials (90 papers)Semiconductor Quantum Structures and Devices (69 papers)Ga2O3 and related materials (27 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Nano Letters ACS Nano Applied Physics Letters
Partner nations: United States Japan Germany

In The Last Decade

Daniel Feezell

108 papers receiving 3.6k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2013 361 citations Steven P. DenBaars, Daniel Feezell et al. profile →
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

2013 287 citations Daniel Feezell, James S. Speck et al. profile →

Peers

Countries citing papers authored by Daniel Feezell

Since Specialization

Citations

This map shows the geographic impact of Daniel Feezell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Feezell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Feezell more than expected).

Fields of papers citing papers by Daniel Feezell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Feezell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Feezell. The network helps show where Daniel Feezell may publish in the future.

Co-authorship network of co-authors of Daniel Feezell

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Feezell. A scholar is included among the top collaborators of Daniel Feezell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Feezell. Daniel Feezell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs 2025 ·Applied Physics Letters ·(unknown),Nick Pant,Sheikh Ifatur Rahman,R. Armitage,Siddharth Rajan,Emmanouil Kioupakis,Daniel Feezell	0
2	Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution 2024 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),Daniel Feezell	6
3	Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence 2023 ·Applied Physics Letters ·(unknown),Nick Pant,(unknown),(unknown),(unknown),Emmanouil Kioupakis,Daniel Feezell	10
4	Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes 2023 ·Journal of Applied Physics ·(unknown),Arman Rashidi,(unknown),(unknown),(unknown),(unknown),Azaree T. Lintereur,Emily K. Mace,Michael A. Scarpulla,Daniel Feezell	6
5	Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs 2023 ·Applied Physics Letters ·(unknown),(unknown),(unknown),Andrew Armstrong,Daniel Feezell	13
6	Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes 2021 ·AIP Advances ·(unknown),Arman Rashidi,(unknown),Morteza Monavarian,Andrew Aragon,(unknown),(unknown),Azaree T. Lintereur,Emily K. Mace,Michael A. Scarpulla,Daniel Feezell	5
7	Advanced Scanning Probe Nanolithography Using GaN Nanowires 2021 ·Nano Letters ·(unknown),(unknown),John N. Randall,Joshua B. Ballard,James H. G. Owen,Ashwin K. Rishinaramangalam,Alexander Reum,Teodor Gotszalk,Daniel Feezell,Ivo W. Rangelow,Tito Busani	16
8	Differences in electrical responses and recovery of GaN p+n diodes on sapphire and freestanding GaN subjected to high dose 60Co gamma-ray irradiation 2021 ·Journal of Applied Physics ·(unknown),(unknown),(unknown),(unknown),Azaree T. Lintereur,Daniel Feezell,Emily K. Mace,Michael A. Scarpulla	7
9	Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements 2019 ·Scientific Reports ·Arman Rashidi,Morteza Monavarian,Andrew Aragon,Daniel Feezell	23
10	Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes 2018 ·Applied Physics Letters ·Morteza Monavarian,Arman Rashidi,Andrew Aragon,Mohsen Nami,Sang Ho Oh,Steven P. DenBaars,Daniel Feezell	25
11	Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN 2018 ·Applied Physics Letters ·Saadat Mishkat‐Ul‐Masabih,Ting S. Luk,Ashwin K. Rishinaramangalam,Morteza Monavarian,Mohsen Nami,Daniel Feezell	39
12	Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate 2018 ·ACS Nano ·(unknown),Mohsen Nami,(unknown),Mohammad Reza Zamani Kouhpanji,Daniel Feezell,S. R. J. Brueck,Tito Busani	42
13	Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes 2018 ·Scientific Reports ·Mohsen Nami,(unknown),(unknown),Saadat Mishkat‐Ul‐Masabih,Ashwin K. Rishinaramangalam,S. R. J. Brueck,Igal Brener,Daniel Feezell	76
14	Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting 2018 ·Comptes Rendus Physique ·Daniel Feezell,Shuji Nakamura	92
15	Insufficiency of the Young’s modulus for illustrating the mechanical behavior of GaN nanowires 2018 ·Nanotechnology ·Mohammad Reza Zamani Kouhpanji,(unknown),Daniel Feezell,Tito Busani	11
16	Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs 2018 ·Nanotechnology ·Serdal Okur,Ashwin K. Rishinaramangalam,Saadat Mishkat‐Ul‐Masabih,Mohsen Nami,Sheng Liu,Igal Brener,S. R. J. Brueck,Daniel Feezell	5
17	Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes 2017 ·Journal of Applied Physics ·Arman Rashidi,Mohsen Nami,Morteza Monavarian,Andrew Aragon,(unknown),(unknown),Saadat Mishkat‐Ul‐Masabih,Ashwin K. Rishinaramangalam,Daniel Feezell	65
18	Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy 2016 ·Nanotechnology ·Mohsen Nami,(unknown),Serdal Okur,Ashwin K. Rishinaramangalam,Sheng Liu,Igal Brener,Daniel Feezell	33
19	State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes 2010 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·James W. Raring,(unknown),(unknown),C. Poblenz,Ben Li,(unknown),(unknown),Yu‐Chia Chang,Daniel Feezell,Richard R. Craig,James S. Speck,Steven P. DenBaars,Shuji Nakamura	7
20	Long-wavelength vertical-cavity surface-emitting lasers with selectively etched thin apertures 2005 ·PhDT ·Daniel Feezell	1

About Daniel Feezell

Daniel Feezell is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 113 papers that have together received 3.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (90 papers), Semiconductor Quantum Structures and Devices (69 papers) and Ga2O3 and related materials (27 papers). The work is most often cited by research in Condensed Matter Physics (3.0k citations), Electronic, Optical and Magnetic Materials (1.1k citations) and Atomic and Molecular Physics, and Optics (1.8k citations). Daniel Feezell has collaborated with scholars based in United States, Japan and Germany. Frequent co-authors include Shuji Nakamura, Steven P. DenBaars, James S. Speck, Morteza Monavarian, Ashwin K. Rishinaramangalam, Arman Rashidi, Kenji Fujito, Mohsen Nami, Yuji Zhao and Shinichi Tanaka. Their work appears in journals such as Nano Letters, ACS Nano and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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