Daniel Feezell

4.6k total citations · 2 hit papers
113 papers, 3.8k citations indexed

About

Daniel Feezell is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, Daniel Feezell has authored 113 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Condensed Matter Physics, 79 papers in Atomic and Molecular Physics, and Optics and 47 papers in Electrical and Electronic Engineering. Recurrent topics in Daniel Feezell's work include GaN-based semiconductor devices and materials (90 papers), Semiconductor Quantum Structures and Devices (69 papers) and Ga2O3 and related materials (27 papers). Daniel Feezell is often cited by papers focused on GaN-based semiconductor devices and materials (90 papers), Semiconductor Quantum Structures and Devices (69 papers) and Ga2O3 and related materials (27 papers). Daniel Feezell collaborates with scholars based in United States, Japan and Germany. Daniel Feezell's co-authors include Shuji Nakamura, Steven P. DenBaars, James S. Speck, Morteza Monavarian, Ashwin K. Rishinaramangalam, Arman Rashidi, Kenji Fujito, Mohsen Nami, Yuji Zhao and Shinichi Tanaka and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

Daniel Feezell

108 papers receiving 3.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

2013 361 citations Steven P. DenBaars, Daniel Feezell et al. profile →
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

2013 287 citations Daniel Feezell, James S. Speck et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Daniel Feezell United States	34	3.0k	1.8k	1.7k	1.3k	1.1k	113	3.8k
Theeradetch Detchprohm United States	36	4.1k 1.4×	1.6k 0.9×	1.8k 1.1×	1.9k 1.5×	2.0k 1.8×	185	4.7k
Masahiko Sano Japan	25	3.4k 1.1×	1.6k 0.9×	1.4k 0.8×	1.6k 1.2×	1.3k 1.2×	44	4.0k
Y.K. Su Taiwan	33	2.5k 0.8×	1.2k 0.7×	1.9k 1.1×	1.9k 1.4×	1.1k 1.0×	145	3.9k
P. J. Parbrook United Kingdom	30	2.2k 0.7×	1.2k 0.7×	1.6k 0.9×	1.4k 1.1×	1.1k 1.0×	206	3.4k
A. J. Fischer United States	25	2.1k 0.7×	1.5k 0.8×	1.4k 0.9×	1.1k 0.8×	992 0.9×	61	3.1k
F. Sèmond France	35	2.6k 0.9×	1.8k 1.0×	2.1k 1.3×	1.4k 1.1×	1.3k 1.2×	170	4.3k
U. Jahn Germany	32	2.6k 0.9×	1.5k 0.8×	1.2k 0.7×	2.0k 1.6×	1.5k 1.3×	193	4.0k
Yuji Zhao United States	34	3.0k 1.0×	1.4k 0.8×	1.9k 1.1×	1.4k 1.0×	1.6k 1.4×	160	3.9k
B. Gayral France	32	1.5k 0.5×	2.4k 1.4×	2.0k 1.2×	1.2k 0.9×	943 0.9×	115	4.0k
Mitsuru Funato Japan	35	4.3k 1.4×	2.1k 1.2×	1.3k 0.8×	2.1k 1.6×	2.0k 1.8×	210	5.0k

Countries citing papers authored by Daniel Feezell

Since Specialization

Citations

This map shows the geographic impact of Daniel Feezell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Feezell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Feezell more than expected).

Fields of papers citing papers by Daniel Feezell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Feezell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Feezell. The network helps show where Daniel Feezell may publish in the future.

Co-authorship network of co-authors of Daniel Feezell

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Feezell. A scholar is included among the top collaborators of Daniel Feezell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Feezell. Daniel Feezell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Pant, Nick, Sheikh Ifatur Rahman, R. Armitage, et al.. (2025). Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs. Applied Physics Letters. 126(13).

Feezell, Daniel, et al.. (2024). Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution. Journal of Applied Physics. 135(3). 6 indexed citations

Pant, Nick, et al.. (2023). Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence. Applied Physics Letters. 122(21). 10 indexed citations

Rashidi, Arman, et al.. (2023). Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes. Journal of Applied Physics. 133(1). 6 indexed citations

Armstrong, Andrew, et al.. (2023). Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs. Applied Physics Letters. 123(11). 13 indexed citations

Rashidi, Arman, Morteza Monavarian, Andrew Aragon, et al.. (2021). Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes. AIP Advances. 11(2). 5 indexed citations

Randall, John N., Joshua B. Ballard, James H. G. Owen, et al.. (2021). Advanced Scanning Probe Nanolithography Using GaN Nanowires. Nano Letters. 21(13). 5493–5499. 16 indexed citations

Lintereur, Azaree T., et al.. (2021). Differences in electrical responses and recovery of GaN p+n diodes on sapphire and freestanding GaN subjected to high dose 60Co gamma-ray irradiation. Journal of Applied Physics. 129(24). 7 indexed citations

Rashidi, Arman, Morteza Monavarian, Andrew Aragon, & Daniel Feezell. (2019). Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements. Scientific Reports. 9(1). 19921–19921. 23 indexed citations

10.

Monavarian, Morteza, Arman Rashidi, Andrew Aragon, et al.. (2018). Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes. Applied Physics Letters. 112(19). 25 indexed citations

11.

Mishkat‐Ul‐Masabih, Saadat, Ting S. Luk, Ashwin K. Rishinaramangalam, et al.. (2018). Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN. Applied Physics Letters. 112(4). 39 indexed citations

12.

Nami, Mohsen, et al.. (2018). Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate. ACS Nano. 12(3). 2373–2380. 42 indexed citations

13.

Nami, Mohsen, Saadat Mishkat‐Ul‐Masabih, Ashwin K. Rishinaramangalam, et al.. (2018). Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. Scientific Reports. 8(1). 501–501. 76 indexed citations

14.

Feezell, Daniel & Shuji Nakamura. (2018). Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting. Comptes Rendus Physique. 19(3). 113–133. 92 indexed citations

15.

Kouhpanji, Mohammad Reza Zamani, et al.. (2018). Insufficiency of the Young’s modulus for illustrating the mechanical behavior of GaN nanowires. Nanotechnology. 29(20). 205706–205706. 11 indexed citations

16.

Okur, Serdal, Ashwin K. Rishinaramangalam, Saadat Mishkat‐Ul‐Masabih, et al.. (2018). Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs. Nanotechnology. 29(23). 235206–235206. 5 indexed citations

17.

Rashidi, Arman, Mohsen Nami, Morteza Monavarian, et al.. (2017). Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes. Journal of Applied Physics. 122(3). 65 indexed citations

18.

Nami, Mohsen, Serdal Okur, Ashwin K. Rishinaramangalam, et al.. (2016). Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy. Nanotechnology. 28(2). 25202–25202. 33 indexed citations

19.

Raring, James W., C. Poblenz, Ben Li, et al.. (2010). State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7686. 76860L–76860L. 7 indexed citations

20.

Feezell, Daniel. (2005). Long-wavelength vertical-cavity surface-emitting lasers with selectively etched thin apertures. PhDT. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact