A. C. Ahyi

1.8k citations

68 papers · 1.5k · h-index 20

Impact in

Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials
- Copper Interconnects and Reliability
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Electrical and Electronic Engineering 55
- Semiconductor materials and devices 43
- Silicon Carbide Semiconductor Technologies 40
- Advancements in Semiconductor Devices and Circuit Design 9
- Thin-Film Transistor Technologies 7
Electronic, Optical and Magnetic Materials 21
- Copper Interconnects and Reliability 13
- Ga2O3 and related materials 6

Co-authors: Sarit Dhar (29 shared papers)John R. Williams (28 shared papers)L. C. Feldman (20 shared papers)Asanka Jayawardena (4 shared papers)Tamara Isaacs‐Smith (18 shared papers)John Rozen (5 shared papers)Sokrates T. Pantelides (5 shared papers)Yogesh Sharma (11 shared papers)
Journals: Journal of Applied Physics (9 papers)Applied Physics Letters (7 papers)Journal of Electronic Materials (5 papers)IEEE Electron Device Letters (4 papers)Solid-State Electronics (4 papers)
Partner nations: United States France Canada

In The Last Decade

A. C. Ahyi

67 papers receiving 1.5k citations

Peers

Countries citing papers authored by A. C. Ahyi

Since Specialization

Citations

This map shows the geographic impact of A. C. Ahyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. C. Ahyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. C. Ahyi more than expected).

Fields of papers citing papers by A. C. Ahyi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. C. Ahyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. C. Ahyi. The network helps show where A. C. Ahyi may publish in the future.

Co-authors

The 25 scholars most cited alongside A. C. Ahyi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. C. Ahyi Line = papers co-authored together A. C. Ahyi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 68 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen Physical Review Letters ·Sanwu Wang, Sarit Dhar, Shu-rui Wang, A. C. Ahyi, Alberto Franceschetti, John R. Williams, L. C. Feldman, Sokrates T. Pantelides	2007	159
2	Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes Journal of Applied Physics ·Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	157
3	Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs IEEE Transactions on Electron Devices ·John Rozen, A. C. Ahyi, Xingguang Zhu, John R. Williams, L. C. Feldman	2011	111
4	Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation IEEE Electron Device Letters ·Gang Liu, A. C. Ahyi, Yi Xu, Tamara Isaacs‐Smith, Yogesh Sharma, John Williams, L. C. Feldman, Sarit Dhar	2013	95
5	High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer IEEE Electron Device Letters ·Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith, Aaron Modic, M. Park, Yi Xu, Eric Garfunkel, Sarit Dhar, L. C. Feldman, John R. Williams	2013	65
6	Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga₂O₃Schottky diodes Semiconductor Science and Technology ·Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	60
7	Atomic state and characterization of nitrogen at the SiC/SiO2 interface Journal of Applied Physics ·Yi Xu, X. Zhu, H. D. Lee, Can Xu, S. M. Shubeita, A. C. Ahyi, Yogesh Sharma, John R. Williams, Wei-Tao Lu, Sorrie Ceesay, Blair Tuttle, A. Wan, Sokrates T. Pantelides, T. Gustafsson, Eric Garfunkel, L. C. Feldman	2014	56
8	Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics Applied Physics Letters ·Asanka Jayawardena, Rahul P. Ramamurthy, A. C. Ahyi, Dallas Morisette, Sarit Dhar	2018	56
9	High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping IEEE Electron Device Letters ·Aaron Modic, Gang Liu, A. C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, L. C. Feldman, Sarit Dhar	2014	54
10	Phosphorous passivation of the SiO2/4H–SiC interface Solid-State Electronics ·Yogesh Sharma, A. C. Ahyi, (unknown), Xiao Shen, Sokrates T. Pantelides, X. Zhu, L. C. Feldman, John Rozen, John R. Williams	2011	50
11	Proton radiation effects in 4H-SiC diodes and MOS capacitors IEEE Transactions on Nuclear Science ·Zhiyun Luo, Tianbing Chen, A. C. Ahyi, Akil K. Sutton, B.M. Haugerud, John D. Cressler, David C. Sheridan, John R. Williams, Paul W. Marshall, Robert A. Reed	2004	44
12	Structure and stoichiometry of (0001) 4H–SiC/oxide interface Applied Physics Letters ·Xingguang Zhu, Hang Dong Lee, Tian Feng, A. C. Ahyi, Daniel Mastrogiovanni, A. Wan, Eric Garfunkel, John R. Williams, Torgny Gustafsson, L. C. Feldman	2010	40
13	Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors Applied Physics Letters ·Matthew Marinella, D.K. Schroder, Tamara Isaacs‐Smith, A. C. Ahyi, John R. Williams, Gil Yong Chung, Jiangbin Wan, Mark J. Loboda	2007	33
14	Experimental demonstration of the pseudo-Rayleigh (A0) wave The Journal of the Acoustical Society of America ·A. C. Ahyi, Philippe Pernod, O. Gatti, V. Latard, Alain Merlen, H. Überall	1998	32
15	Nitrogen and Hydrogen Induced Trap Passivation at the SiO<sub>2</sub>/4H-SiC Interface Materials science forum ·Sarit Dhar, S.R. Wang, A. C. Ahyi, Tamara Isaacs‐Smith, Sokrates T. Pantelides, John R. Williams, L. C. Feldman	2006	31
16	Chitosan solid electrolyte as electric double layer in multilayer MoS₂ transistor for low‐voltage operation physica status solidi (a) ·Jie Jiang, Marcelo A. Kuroda, A. C. Ahyi, Tamara Isaacs‐Smith, Vahid Mirkhani, Minseo Park, Sarit Dhar	2015	26
17	The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices Solid-State Electronics ·Xingguang Zhu, A. C. Ahyi, Mingyu Li, Zengjun Chen, John Rozen, L. C. Feldman, John R. Williams	2011	25
18	Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) Journal of Applied Physics ·Min P. Khanal, Sunil Uprety, Vahid Mirkhani, Shiqiang Wang, Kosala Yapabandara, Ehsan Hassani, Tamara Isaacs‐Smith, A. C. Ahyi, Michael J. Bozack, Tae-Sik Oh, Minseo Park	2018	22
19	Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration DOAJ (DOAJ: Directory of Open Access Journals) ·Fei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, A. C. Ahyi, Tamara Isaacs‐Smith, John R. Williams, Hosang Ahn, Hyejin Park, Dong‐Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, Minseo Park	2012	22
20	Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence Journal of Applied Physics ·C. Jiao, A. C. Ahyi, Can Xu, Dallas Morisette, L. C. Feldman, Sarit Dhar	2016	21

About A. C. Ahyi

A. C. Ahyi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 68 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (43 papers), Silicon Carbide Semiconductor Technologies (40 papers), Copper Interconnects and Reliability (13 papers), Semiconductor materials and interfaces (12 papers), ZnO doping and properties (12 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Thin-Film Transistor Technologies (7 papers) and Ga2O3 and related materials (6 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (550 citations), Electrical and Electronic Engineering (1.2k citations), Ceramics and Composites (75 citations), Materials Chemistry (443 citations) and Renewable Energy, Sustainability and the Environment (127 citations). A. C. Ahyi has collaborated with scholars based in United States, France and Canada. Frequent co-authors include Sarit Dhar, John R. Williams, L. C. Feldman, Asanka Jayawardena, Tamara Isaacs‐Smith, John Rozen, Sokrates T. Pantelides, Yogesh Sharma, Andrew Armstrong and Mary H. Crawford. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Electronic Materials, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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