A. C. Ahyi

1.8k total citations
68 papers, 1.5k citations indexed

About

A. C. Ahyi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, A. C. Ahyi has authored 68 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 21 papers in Electronic, Optical and Magnetic Materials and 17 papers in Materials Chemistry. Recurrent topics in A. C. Ahyi's work include Semiconductor materials and devices (43 papers), Silicon Carbide Semiconductor Technologies (40 papers) and Copper Interconnects and Reliability (13 papers). A. C. Ahyi is often cited by papers focused on Semiconductor materials and devices (43 papers), Silicon Carbide Semiconductor Technologies (40 papers) and Copper Interconnects and Reliability (13 papers). A. C. Ahyi collaborates with scholars based in United States, France and Netherlands. A. C. Ahyi's co-authors include Sarit Dhar, John R. Williams, L. C. Feldman, Asanka Jayawardena, Tamara Isaacs‐Smith, John Rozen, Sokrates T. Pantelides, Yogesh Sharma, Mary H. Crawford and Andrew Armstrong and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

A. C. Ahyi

67 papers receiving 1.4k citations

Peers

Countries citing papers authored by A. C. Ahyi

Since Specialization

Citations

This map shows the geographic impact of A. C. Ahyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. C. Ahyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. C. Ahyi more than expected).

Fields of papers citing papers by A. C. Ahyi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. C. Ahyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. C. Ahyi. The network helps show where A. C. Ahyi may publish in the future.

Co-authorship network of co-authors of A. C. Ahyi

This figure shows the co-authorship network connecting the top 25 collaborators of A. C. Ahyi. A scholar is included among the top collaborators of A. C. Ahyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. C. Ahyi. A. C. Ahyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Simultaneous effect of precursor sources and concentration on structural, morphological and optical properties of ZnO nanostructured thin films for photovoltaic applications 2025 ·International Journal of Renewable Energy Development ·(unknown), M. Banéto, (unknown), M. Haris, (unknown), (unknown), A. C. Ahyi, (unknown), (unknown)	1
2	Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing 2023 ·Journal of Applied Physics ·Suman Das, Hengfei Gu, (unknown), A. C. Ahyi, L. C. Feldman, Eric Garfunkel, Marcelo A. Kuroda, Sarit Dhar	4
3	The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors 2022 ·Solid-State Electronics ·Sicong Wang, (unknown), (unknown), (unknown), (unknown), (unknown), A. C. Ahyi, Michael C. Hamilton, (unknown), (unknown)	5
4	High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors 2021 ·Journal of Applied Physics ·Suman Das, Tamara Isaacs‐Smith, A. C. Ahyi, Marcelo A. Kuroda, Sarit Dhar	11
5	Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors 2021 ·Journal of Applied Physics ·(unknown), (unknown), Dallas Morisette, A. C. Ahyi, Ryan Thorpe, Marcelo A. Kuroda, L. C. Feldman, Sarit Dhar	12
6	High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors 2021 ·Semiconductor Science and Technology ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Ehsan Hassani, (unknown), Dong‐Joo Kim, Tae-Sik Oh, A. C. Ahyi, Sarit Dhar, Michael C. Hamilton, (unknown), Minseo Park	6
7	Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) 2018 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), (unknown), (unknown), Ehsan Hassani, Tamara Isaacs‐Smith, A. C. Ahyi, Michael J. Bozack, Tae-Sik Oh, Minseo Park	22
8	Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics 2018 ·Applied Physics Letters ·Asanka Jayawardena, (unknown), A. C. Ahyi, Dallas Morisette, Sarit Dhar	53
9	Gamma-Ray Irradiation Effect on Sol-Gel Derived Zinc Tin Oxide Thin Film Transistors 2018 ·APS ·Shiqiang Wang, (unknown), (unknown), (unknown), (unknown), (unknown), A. C. Ahyi, Michael C. Hamilton, (unknown), Minseo Park	1
10	Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides 2017 ·Journal of Electronic Materials ·(unknown), A. C. Ahyi, Sarit Dhar, Dallas Morisette, R.L. Myers-Ward	7
11	Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence 2016 ·Journal of Applied Physics ·(unknown), A. C. Ahyi, Can Xu, Dallas Morisette, L. C. Feldman, Sarit Dhar	19
12	Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes 2016 ·Journal of Applied Physics ·Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	157
13	Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga₂O₃Schottky diodes 2016 ·Semiconductor Science and Technology ·Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	59
14	Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface 2015 ·Journal of Applied Physics ·Yi Xu, Can Xu, Gang Liu, (unknown), S. M. Shubeita, (unknown), (unknown), A. C. Ahyi, Yogesh Sharma, A. Wan, John R. Williams, (unknown), Sarit Dhar, Eric Garfunkel, L. C. Feldman	8
15	Chitosan solid electrolyte as electric double layer in multilayer MoS₂ transistor for low‐voltage operation 2015 ·physica status solidi (a) ·Jie Jiang, Marcelo A. Kuroda, A. C. Ahyi, Tamara Isaacs‐Smith, (unknown), Minseo Park, Sarit Dhar	26
16	Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si 2014 ·Applied Physics Letters ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), A. C. Ahyi, Minseo Park	7
17	Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers 2014 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Peizhi Liu, Guoliang Li, Gerd Duscher, Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith, John R. Williams, Sarit Dhar	14
18	The Limits of Post Oxidation Annealing in NO 2010 ·Materials science forum ·John Rozen, (unknown), A. C. Ahyi, John R. Williams, L. C. Feldman	17
19	Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen 2007 ·Physical Review Letters ·Sanwu Wang, Sarit Dhar, (unknown), A. C. Ahyi, Alberto Franceschetti, John R. Williams, L. C. Feldman, Sokrates T. Pantelides	159
20	On the electro-optic measurements in organic single-crystal films 2004 ·Journal of Physics D Applied Physics ·Achintya K. Bhowmik, Shida Tan, A. C. Ahyi	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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