Sarit Dhar

4.0k citations

119 papers · 3.2k indexed · h-index 33

Impact in

Ceramics and Composites top 2%
- Advanced ceramic materials synthesis
Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Electrical and Electronic Engineering 109
- Silicon Carbide Semiconductor Technologies 95
- Semiconductor materials and devices 95
- Advancements in Semiconductor Devices and Circuit Design 22
- Thin-Film Transistor Technologies 11
Electronic, Optical and Magnetic Materials 33
- Copper Interconnects and Reliability 23
- Ga2O3 and related materials 10

Co-authors: L. C. Feldman John R. Williams A. C. AhyiGang LiuSokrates T. Pantelides Blair Tuttle Asanka Jayawardena Anant Agarwal
Journals: Journal of Applied Physics (19 papers)Applied Physics Letters (13 papers)IEEE Electron Device Letters (5 papers)Semiconductor Science and Technology (5 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: United States China Canada

In The Last Decade

Sarit Dhar

115 papers receiving 3.1k citations

Peers

Countries citing papers authored by Sarit Dhar

Since Specialization

Citations

This map shows the geographic impact of Sarit Dhar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sarit Dhar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sarit Dhar more than expected).

Fields of papers citing papers by Sarit Dhar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sarit Dhar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sarit Dhar. The network helps show where Sarit Dhar may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Sarit Dhar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sarit Dhar Line = papers co-authored together Sarit Dhar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing Journal of Applied Physics ·Suman Das, Hengfei Gu, J. Ceary, A. C. Ahyi, L. C. Feldman, Eric Garfunkel, Marcelo A. Kuroda, Sarit Dhar	2023	4
2	High conductivity β-Ga2O3 formed by hot Si ion implantation Applied Physics Letters ·Ting Ting Zhai, Tamara Isaacs‐Smith, ALEXANDER FURSÌN, Thaddeus J. Asel, R. Comès, J. Neil Merrett, Sarit Dhar	2022	15
3	Analytical electron microscopy of (2¯01) β-Ga2O3/SiO2 and (2¯01) β-Ga2O3/Al2O3 interface structures in MOS capacitors Journal of Applied Physics ·S MOY, Asanka Jayawardena, Sarit Dhar, Sezen Sarikaya, Dallas Morisette, Tsvetanka Zheleva, Aivars J. Lelis, L. Salamanca‐Riba	2021	6
4	High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors Journal of Applied Physics ·Suman Das, Tamara Isaacs‐Smith, A. C. Ahyi, Marcelo A. Kuroda, Sarit Dhar	2021	11
5	Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors Journal of Applied Physics ·Global Initiative for Asthma, Sezen Sarikaya, Dallas Morisette, A. C. Ahyi, Ryan Thorpe, Marcelo A. Kuroda, L. C. Feldman, Sarit Dhar	2021	12
6	High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors Semiconductor Science and Technology ·К В Ковтуненко, B. Rahayuningsih, Rei Yamanaka, О. П. Гуюмджян, М Ф Шацкая, Shih-Nan Cheng, Tvisha Raghuram, Ehsan Hassani, Joan Mark, Dong‐Joo Kim, Tae-Sik Oh, A. C. Ahyi, Sarit Dhar, Michael C. Hamilton, Michael V. Romer, Minseo Park	2021	6
7	Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors Micron ·S MOY, Asanka Jayawardena, Sarit Dhar, Sezen Sarikaya, Dallas Morisette, F. Iturbe, John Cumings, Tsvetanka Zheleva, Aivars J. Lelis, L. Salamanca‐Riba	2020	10
8	Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics Applied Physics Letters ·Asanka Jayawardena, Sezen Sarikaya, A. C. Ahyi, Dallas Morisette, Sarit Dhar	2018	53
9	Thermal characterization of gallium oxide Schottky barrier diodes Review of Scientific Instruments ·Bikramjit Chatterjee, Asanka Jayawardena, Eric R. Heller, David W. Snyder, Sarit Dhar, Sukwon Choi	2018	45
10	Enhancement of the electrical characteristics of thin-film transistors with multi-stack zinc tin oxide channel layers produced with 2 different solution concentrations Bulletin of the American Physical Society ·Shih-Nan Cheng, Shiqiang Wang, Daria A. Smotrova, Rei Yamanaka, К В Ковтуненко, М Ф Шацкая, Joan Mark, Sarit Dhar, Michael C. Hamilton, Willis E. Hames, E. B. Shapiro, Minseo Park	2018	1
11	Delivery of lethal dsRNAs in insect diets by branched amphiphilic peptide capsules Journal of Controlled Release ·L. Adriana Avila, Raman Chandrasekar, Flaviane de Fátima Silva, M. Ashtari, Matthew C. Heerman, Richard G. Areen, Susan J. Brown, 茂文佐々木, Sarit Dhar, Gerald R. Reeck, John M. Tomich	2018	78
12	Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides Journal of Electronic Materials ·Azadeh Matin, A. C. Ahyi, Sarit Dhar, Dallas Morisette, R.L. Myers-Ward	2017	7
13	Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence Journal of Applied Physics ·Azadeh Matin, A. C. Ahyi, Can Xu, Dallas Morisette, L. C. Feldman, Sarit Dhar	2016	19
14	Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes Journal of Applied Physics ·Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	157
15	Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga₂O₃Schottky diodes Semiconductor Science and Technology ·Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	59
16	Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface Journal of Applied Physics ·Yi Xu, Can Xu, Gang Liu, 北九州市消防局, S. M. Shubeita, Azadeh Matin, Karin Kisos, A. C. Ahyi, Yogesh Sharma, A. Wan, John R. Williams, Shreshth Sharma, Sarit Dhar, Eric Garfunkel, L. C. Feldman	2015	8
17	Chitosan solid electrolyte as electric double layer in multilayer MoS₂ transistor for low‐voltage operation physica status solidi (a) ·Jie Jiang, Marcelo A. Kuroda, A. C. Ahyi, Tamara Isaacs‐Smith, К В Ковтуненко, Minseo Park, Sarit Dhar	2015	26
18	Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs MRS Proceedings ·Sarah K. Haney, Sei‐Hyung Ryu, Sarit Dhar, Anant Agarwal, Mark A. Johnson	2008	2
19	Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen Physical Review Letters ·Sanwu Wang, Sarit Dhar, Kaies Hedhli, A. C. Ahyi, Alberto Franceschetti, John R. Williams, L. C. Feldman, Sokrates T. Pantelides	2007	159
20	Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC HAL (Le Centre pour la Communication Scientifique Directe) ·H. J. von Bardeleben, J. L. Cantin, I. Vickridge, J A Bar-Maor, Sarit Dhar, L. C. Feldman, Hafidz Dezulfakar, Linghong Ke, Y. Shishkin, Robert P. Devaty, W. J. Choyke	2004	5

About Sarit Dhar

Sarit Dhar is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Ceramics and Composites, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 119 papers that have together received 3.2k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (95 papers), Semiconductor materials and devices (95 papers), Copper Interconnects and Reliability (23 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and interfaces (15 papers), ZnO doping and properties (12 papers), Thin-Film Transistor Technologies (11 papers) and Ga2O3 and related materials (10 papers). The work is most often cited by research in Ceramics and Composites (293 citations), Electrical and Electronic Engineering (2.7k citations), Electronic, Optical and Magnetic Materials (825 citations), Materials Chemistry (689 citations) and Atomic and Molecular Physics, and Optics (390 citations). Sarit Dhar has collaborated with scholars based in United States, China and Canada. Frequent co-authors include L. C. Feldman, John R. Williams, A. C. Ahyi, Gang Liu, Sokrates T. Pantelides, Blair Tuttle, Asanka Jayawardena, Anant Agarwal, Sei‐Hyung Ryu and Tamara Isaacs‐Smith. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology and IEEE Transactions on Electron Devices.

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