A. Vayshenker

1.3k citations

16 papers · 679 indexed · h-index 13

Co-authors: Ernest Y. Wu E. Nowak D. Harmon W. Lai B.P. Linder J. H. Stathis J. Suñé D.J. Frank
Topics: Semiconductor materials and devices (15 papers)Advancements in Semiconductor Devices and Circuit Design (12 papers)Integrated Circuits and Semiconductor Failure Analysis (8 papers)
Cited by: Electrical and Electronic Engineering Hardware and Architecture Electronic, Optical and Magnetic Materials
Journals: IEEE Transactions on Electron Devices IEEE Electron Device Letters IBM Journal of Research and Development
Partner nations: United States Spain Italy

In The Last Decade

A. Vayshenker

16 papers receiving 639 citations

Peers

Countries citing papers authored by A. Vayshenker

Since Specialization

Citations

This map shows the geographic impact of A. Vayshenker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Vayshenker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Vayshenker more than expected).

Fields of papers citing papers by A. Vayshenker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Vayshenker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Vayshenker. The network helps show where A. Vayshenker may publish in the future.

Co-authorship network of co-authors of A. Vayshenker

This figure shows the co-authorship network connecting the top 25 collaborators of A. Vayshenker. A scholar is included among the top collaborators of A. Vayshenker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Vayshenker. A. Vayshenker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

#	Work	Indexed citations
1	Self-heating characterization and its applications in technology development 2020 ·(unknown),M. Toledano-Luque,T. Nigam,F Guarin,(unknown),S. Cimino,L. Pantisano,Amit Kumar Gupta,(unknown),(unknown),(unknown),A. Vayshenker,Dimitris P. Ioannou,(unknown),Lei Jiang,(unknown),Stewart E. Rauch,(unknown)	2
2	Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs 2010 ·A. Kerber,A. Vayshenker,(unknown),T. Nigam,E. Cartier	24
3	A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode 2006 ·Ernest Y. Wu,J. Suñé,W. Lai,A. Vayshenker,D. Harmon	13
4	Critical reliability challenges in scaling SiO2-based dielectric to its limit 2003 ·Microelectronics Reliability ·Ernest Y. Wu,J. Suñé,W. Lai,A. Vayshenker,E. Nowak,D. Harmon	25
5	Growth and scaling of oxide conduction after breakdown 2003 ·B.P. Linder,J. H. Stathis,D.J. Frank,S. Lombardo,A. Vayshenker	49
6	Gate oxide breakdown under Current Limited Constant Voltage Stress 2002 ·B.P. Linder,J. H. Stathis,R. Wachnik,Ernest Y. Wu,S. A. Cohen,(unknown),A. Vayshenker	66
7	Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides 2002 ·Ernest Y. Wu,J. Aitken,E. Nowak,A. Vayshenker,(unknown),(unknown),J. A. McKenna,D. Harmon,(unknown),C. J. Montrose,(unknown)	67
8	CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics 2002 ·IBM Journal of Research and Development ·Ernest Y. Wu,E. Nowak,A. Vayshenker,W. Lai,D. Harmon	62
9	Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage 2002 ·J. H. Stathis,A. Vayshenker,(unknown),Ernest Y. Wu,C. J. Montrose,J. A. McKenna,D. J. DiMaria,L.K. Han,E. Cartier,R. Wachnik,B.P. Linder	12
10	Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides 2002 ·Solid-State Electronics ·Ernest Y. Wu,J. Suñé,W. Lai,E. Nowak,J. A. McKenna,A. Vayshenker,D. Harmon	88
11	Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics 2002 ·IEEE Electron Device Letters ·B.P. Linder,S. Lombardo,J. H. Stathis,A. Vayshenker,D.J. Frank	91
12	Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown 2002 ·IEEE Transactions on Electron Devices ·Ernest Y. Wu,A. Vayshenker,E. Nowak,J. Suñé,R.‐P. Vollertsen,W. Lai,D. Harmon	106
13	Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides 2001 ·Microelectronic Engineering ·Ernest Y. Wu,J. Suñé,W. Lai,E. Nowak,J. A. McKenna,A. Vayshenker,D. Harmon	15
14	New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database 2001 ·IEEE Transactions on Device and Materials Reliability ·Ernest Y. Wu,E. Nowak,A. Vayshenker,J. A. McKenna,D. Harmon,R.‐P. Vollertsen	31
15	The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides 2001 ·IEEE Electron Device Letters ·Ernest Y. Wu,James McKenna,W. Lai,E. Nowak,A. Vayshenker	22
16	Device Reliability and Repeatability of a High Performance Si/SiGe HBT BiCMOS Technology 1998 ·European Solid-State Device Research Conference ·D. Ahlgren,(unknown),G. Freeman,(unknown),R. Groves,(unknown),A. Vayshenker,(unknown)	6

About A. Vayshenker

A. Vayshenker is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials, having authored 16 papers that have together received 679 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (661 citations), Hardware and Architecture (44 citations) and Electronic, Optical and Magnetic Materials (64 citations). A. Vayshenker has collaborated with scholars based in United States, Spain and Italy. Frequent co-authors include Ernest Y. Wu, E. Nowak, D. Harmon, W. Lai, B.P. Linder, J. H. Stathis, J. Suñé, D.J. Frank, S. Lombardo and J. A. McKenna. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IBM Journal of Research and Development.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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