D.L. Kencke

712 citations

34 papers · 423 indexed · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
Polymers and Plastics
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 22
- Advancements in Semiconductor Devices and Circuit Design 19
- Advanced Memory and Neural Computing 7
- Integrated Circuits and Semiconductor Failure Analysis 4
- Ferroelectric and Negative Capacitance Devices 3
Atomic and Molecular Physics, and Optics 7
- Semiconductor materials and interfaces 4

Co-authors: John P. Reifenberg Kenneth E. Goodson Uygar E. Avci Ibrahim Ban S. Banerjee A.F. Tasch Miriam Reshotko I. V. Karpov
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (2 papers)Solid-State Electronics (1 paper)Superlattices and Microstructures (1 paper)Journal of Applied Physics (1 paper)
Partner nations: United States India

In The Last Decade

D.L. Kencke

32 papers receiving 398 citations

Peers

Countries citing papers authored by D.L. Kencke

Since Specialization

Citations

This map shows the geographic impact of D.L. Kencke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.L. Kencke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.L. Kencke more than expected).

Fields of papers citing papers by D.L. Kencke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.L. Kencke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.L. Kencke. The network helps show where D.L. Kencke may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D.L. Kencke, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D.L. Kencke Line = papers co-authored together D.L. Kencke links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characterization and Closed-Form Modeling of Edge/Top/Hybrid Metal-2D Semiconductor Contacts 2022 International Electron Devices Meeting (IEDM) ·Arnab Pal, Martin A. Dettmer, J. R. Weber, Karthik Krishnaswamy, Krishnendu Ghosh, Ashish Verma Penumatcha, 大力曾, Kevin P. O’Brien, D.L. Kencke, Kaustav Banerjee	2022	6
2	Intrinsic Reliability Study in Low-k Dielectrics with Co Metallurgy in 10nm Process Gloria Inés Ávila González, J. Palmer, Dr.M.V. Sudhamani, Hlib Lazarenko, 전주교육대학교, J. R. Weber, D.L. Kencke, Advait Madhavan	2020	2
3	Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions Applied Physics Letters ·A. Svyatkovskiy, Juan G. Alzate, Riley Tj, Andrew J. Smith, D.L. Kencke, Vitaliy Lomakin	2020	12
4	Write error rate in spin-transfer-torque random access memory including micromagnetic effects Joung-Ku Park, D.L. Kencke, Tanmoy Pramanik, Leonard F. Register, S. Banerjee	2015	2
5	Integration of Back-Gate doping for 15-nm node floating body cell (FBC) memory Ibrahim Ban, Uygar E. Avci, D.L. Kencke, Kazys Gaivenis, Cisse Sory Ibrahima	2010	3
6	Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties MRS Proceedings ·I. V. Karpov, D.L. Kencke, D. Kau, 静菊侯, G. Spadini	2010	8
7	Future high density memories for computing applications: Device behavior and modeling challenges Kannan Navaneetham, I. V. Karpov, D.L. Kencke	2010	4
8	The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices IEEE Electron Device Letters ·John P. Reifenberg, D.L. Kencke, Kenneth E. Goodson	2008	102
9	A scaled floating body cell (FBC) memory with high-k+metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond Ibrahim Ban, Uygar E. Avci, D.L. Kencke, Cisse Sory Ibrahima	2008	21
10	The Role of Interfaces in Damascene Phase-Change Memory D.L. Kencke, I. V. Karpov, CS Fong, Jyun-Long Lee, D. Kau, S. J. Hudgens, John P. Reifenberg, Semyon D. Savransky, Jingyan Zhang, M.D. Giles, Kannan Navaneetham	2007	29
11	Floating Body Cell with Independently-Controlled Double Gates for High Density Memory Ibrahim Ban, Uygar E. Avci, Uday Shah, Tracey Crickett, D.L. Kencke, Peter Chang	2006	32
12	Flash ETOX virtual ground architecture: a future scaling direction R.J. Koval, 完風間, Eduardo Rodrigues Vale Dr. Onsimo Ferreira, Vanessa Leonardi, D.L. Kencke, 刘卫陵, C. Kuo, Catherine van’t Riet, Ming‐Liang Wei, Elaina Poleto, A. Fazio	2005	5
13	Random charge effects for PMOS NBTI in ultra-small gate area devices M. Agostinelli, Sangwoo Pae, Wenxing Yang, C. Prasad, D.L. Kencke, S. Ramey, Júlia Bárbara da Silva Machado, J. Borker-Klähn, 葛海波	2005	33
14	A novel sidewall strained-Si channel nMOSFET 葉鈞凱, Rosa Marie Vida, Gerald G. Boyd, Xiaofeng Chen, Judite Salavessa, D.L. Kencke, Chikasi SIBATA, W. Liu, (unknown), Sanjay K. Banerjee	2003	0
15	Source-side barrier effects with very high-K dielectrics in 50 nm Si MOSFETs D.L. Kencke, Aurilene de Macêdo Alves Bona, Yuanyuan Yu, S. Mudanai, Q. Ouyang, A.F. Tasch, Siddhartha Banerjee	2003	10
16	Band alignments in sidewall strained Si/strained SiGe heterostructures Solid-State Electronics ·Rosa Marie Vida, D.L. Kencke, A. A. Bugai, Leonard F. Register, S. Banerjee	2002	1
17	The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory D.L. Kencke, Rosa Marie Vida, Yuanyuan Yu, Q. Ouyang, S. Jallepalli, M. Rashed, C.M. Maziar, A.F. Tasch, S. Banerjee	2002	6
18	A sixteen level scheme enabling 64 Mbit flash memory using 16 Mbit technology D.L. Kencke, LINDA LEVENSON, Domenico Ortisi, S. Banerjee	2002	2
19	Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics ·Xin Wang, D.L. Kencke, Kyle, A.F. Tasch, Leonard F. Register, S. Banerjee	2000	8
20	A multilevel approach toward quadrupling the density of flash memory IEEE Electron Device Letters ·D.L. Kencke, LINDA LEVENSON, Domenico Ortisi, S. Banerjee	1998	3

About D.L. Kencke

D.L. Kencke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computer Networks and Communications, Polymers and Plastics and Hardware and Architecture, having authored 34 papers that have together received 423 indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Advanced Memory and Neural Computing (7 papers), Semiconductor materials and interfaces (4 papers), Phase-change materials and chalcogenides (4 papers), Advanced Data Storage Technologies (4 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (364 citations), Polymers and Plastics (49 citations), Materials Chemistry (159 citations), Hardware and Architecture (20 citations) and Electronic, Optical and Magnetic Materials (35 citations). D.L. Kencke has collaborated with scholars based in United States and India. Frequent co-authors include John P. Reifenberg, Kenneth E. Goodson, Uygar E. Avci, Ibrahim Ban, S. Banerjee, A.F. Tasch, Miriam Reshotko, I. V. Karpov, Bruce A. Block and B. Bandyopadhyay. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, Superlattices and Microstructures and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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