C. G. Willison

707 total citations
27 papers, 584 citations indexed

About

C. G. Willison is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanics of Materials. According to data from OpenAlex, C. G. Willison has authored 27 papers receiving a total of 584 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 13 papers in Mechanics of Materials. Recurrent topics in C. G. Willison's work include Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (14 papers) and Metal and Thin Film Mechanics (13 papers). C. G. Willison is often cited by papers focused on Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (14 papers) and Metal and Thin Film Mechanics (13 papers). C. G. Willison collaborates with scholars based in United States. C. G. Willison's co-authors include R. J. Shul, S. J. Pearton, Jung Han, F. Ren, Albert G. Baca, L. F. Lester, C. R. Abernathy, S. M. Donovan, Paul Miller and J. R. Woodworth and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

C. G. Willison

26 papers receiving 566 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. G. Willison United States	14	432	357	164	143	124	27	584
Kosuke Murakami Japan	12	182 0.4×	490 1.4×	266 1.6×	300 2.1×	77 0.6×	48	549
Jana Hartmann Germany	16	231 0.5×	377 1.1×	212 1.3×	321 2.2×	123 1.0×	44	618
R. N. Bicknell-Tassius Germany	18	679 1.6×	235 0.7×	124 0.8×	398 2.8×	68 0.5×	67	990
Y. Sutoh Japan	15	178 0.4×	453 1.3×	147 0.9×	202 1.4×	25 0.2×	52	705
Pierre‐Marie Coulon United Kingdom	16	198 0.5×	317 0.9×	271 1.7×	239 1.7×	48 0.4×	41	597
Mitsuo Okamoto Japan	20	1.0k 2.4×	108 0.3×	133 0.8×	131 0.9×	57 0.5×	114	1.2k
Bart Van Zeghbroeck United States	14	449 1.0×	261 0.7×	106 0.6×	136 1.0×	56 0.5×	49	579
Steven C. Binari United States	11	315 0.7×	249 0.7×	127 0.8×	106 0.7×	36 0.3×	21	422
E. Armour United States	16	517 1.2×	464 1.3×	162 1.0×	266 1.9×	103 0.8×	67	868

Countries citing papers authored by C. G. Willison

Since Specialization

Citations

This map shows the geographic impact of C. G. Willison's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. G. Willison with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. G. Willison more than expected).

Fields of papers citing papers by C. G. Willison

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. G. Willison. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. G. Willison. The network helps show where C. G. Willison may publish in the future.

Co-authorship network of co-authors of C. G. Willison

This figure shows the co-authorship network connecting the top 25 collaborators of C. G. Willison. A scholar is included among the top collaborators of C. G. Willison based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. G. Willison. C. G. Willison is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Economou, Demetre J., J. R. Woodworth, Paul Miller, et al.. (2003). Plasma molding over surface topography: simulation and measurement of ion fluxes, energies and angular distributions over trenches in RF high density plasmas. IEEE Transactions on Plasma Science. 31(4). 691–702. 26 indexed citations

Descour, Michael R., Jeremy D. Rogers, Liang Chen, et al.. (2002). Toward the development of miniaturized imaging systems for detection of pre-cancer. IEEE Journal of Quantum Electronics. 38(2). 122–130. 24 indexed citations

Rogers, Jeremy D., et al.. (2002). Fabrication and Assembly of Miniature Imaging Systems Using Lithographically Patterned Micro-optics and Silicon Microstructures. DTuC4–DTuC4. 1 indexed citations

Woodworth, J. R., Paul Miller, R. J. Shul, et al.. (2002). Experimental and theoretical study of ion distributions near 300 μm tall steps on rf-biased wafers in high density plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(1). 147–155. 14 indexed citations

Woodworth, J. R., M. E. Riley, Paul Miller, et al.. (2002). Ion energy distributions at rf-biased wafer surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 20(3). 873–886. 47 indexed citations

Peake, Gregory M., et al.. (2000). A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures. Journal of Electronic Materials. 29(1). 86–90. 5 indexed citations

Shul, R. J., et al.. (2000). Silicon Microfabrication Technologies for Nano-Satellite Applications. 482–487. 3 indexed citations

Shul, R. J., Albert G. Baca, C. G. Willison, et al.. (2000). Inductively coupled plasma-induced etch damage of GaN p-n junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1139–1143. 86 indexed citations

Shul, R. J., L. Zhang, Albert G. Baca, et al.. (2000). Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs. MRS Proceedings. 622. 3 indexed citations

10.

Zhang, L., L. F. Lester, Albert G. Baca, et al.. (2000). Epitaxially-grown GaN junction field effect transistors. IEEE Transactions on Electron Devices. 47(3). 507–511. 31 indexed citations

11.

Ren, F., Jung Han, R. Hickman, et al.. (2000). GaN/AlGaN HBT fabrication. Solid-State Electronics. 44(2). 239–244. 25 indexed citations

12.

Peake, Gregory M., et al.. (1999). Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(5). 2070–2073. 5 indexed citations

13.

Willison, C. G., et al.. (1999). High-Density Plasma-Induced Etch Damage of GaN. MRS Proceedings. 573. 29 indexed citations

14.

Han, Jung, Albert G. Baca, R. J. Shul, et al.. (1999). Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Applied Physics Letters. 74(18). 2702–2704. 71 indexed citations

15.

Leavitt, Richard P., et al.. (1998). Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar. University of North Texas Digital Library (University of North Texas). 4 indexed citations

16.

Manginell, Ronald P., Gregory C. Frye-Mason, W. K. Schubert, R. J. Shul, & C. G. Willison. (1998). Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon. University of North Texas Digital Library (University of North Texas). 4 indexed citations

17.

Shul, R. J., C. G. Willison, Jung Han, et al.. (1998). High-density plasma etch selectivity for the III–V nitrides. Solid-State Electronics. 42(12). 2269–2276. 35 indexed citations

18.

Shul, R. J., Carol I. H. Ashby, C. G. Willison, et al.. (1998). GaN Etching in BCl₃/Cl₂ Plasmas. MRS Proceedings. 512. 10 indexed citations

19.

Shul, R. J., et al.. (1998). Comparison of plasma etch techniques for III–V nitrides. Solid-State Electronics. 42(12). 2259–2267. 36 indexed citations

20.

Shul, R. J., C. G. Willison, Jung Han, et al.. (1997). Selective Etching Of Wide Bandgap Nitrides. MRS Proceedings. 483. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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