Dave Bour

876 citations

10 papers · 751 indexed · h-index 8

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 7
- GaN-based semiconductor devices and materials 7
Atomic and Molecular Physics, and Optics 5
- Semiconductor Quantum Structures and Devices 4

Co-authors: I.C. Kizilyalli Andrew Edwards Hui Nie Don Disney T. Prunty Brendan M. Kayes Quentin DiduckMing Zhang
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (1 paper)Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena (1 paper)OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (1 paper)
Partner nations: United States

In The Last Decade

Dave Bour

10 papers receiving 706 citations

Peers

Countries citing papers authored by Dave Bour

Since Specialization

Citations

This map shows the geographic impact of Dave Bour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dave Bour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dave Bour more than expected).

Fields of papers citing papers by Dave Bour

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dave Bour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dave Bour. The network helps show where Dave Bour may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Dave Bour, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dave Bour Line = papers co-authored together Dave Bour links everyone, so they are left out of the graph.

All Works

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10 of 10 papers shown

#	Work
1	3.7 kV Vertical GaN PN Diodes IEEE Electron Device Letters ·I.C. Kizilyalli, Andrew Edwards, Hui Nie, Dave Bour, T. Prunty, Don Disney	2014	120
2	400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V IEEE Electron Device Letters ·I.C. Kizilyalli, Andrew Edwards, Hui Nie, Thomas Steward, Lina Zaidan, Dave Bour	2014	42
3	1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates IEEE Electron Device Letters ·Hui Nie, Quentin Diduck, Brian Alvarez, Andrew Edwards, Brendan M. Kayes, Ming Zhang, Paul Borchiellini, T. Prunty, Dave Bour, I.C. Kizilyalli	2014	287
4	High Voltage Vertical GaN p-n Diodes With Avalanche Capability IEEE Transactions on Electron Devices ·I.C. Kizilyalli, Andrew Edwards, Hui Nie, Don Disney, Dave Bour	2013	219
5	Self-aligned, buried heterostructure AlInGaAs laser diodesby micro-selective-area epitaxy Applied Physics Letters ·Dave Bour, S. Corzine, Nathan MacGilvary, Jia Zhu, A. Tandon, Oleksandra Konoval, G. Soyter, Azizah Salsabila, Luis Javier Martínez, G. E. Höfler, Minghong Tan	2004	3
6	Band gap changes of GaN shocked to 13 GPa Applied Physics Letters ·Matthew D. McCluskey, Y. M. Gupta, Chris G. Van de Walle, Dave Bour, Michael Kneissl, N. M. Johnson	2002	8
7	Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography Applied Physics Letters ·Martha R. McCartney, F. A. Ponce, Juan Cai, Dave Bour	2000	42
8	Characterization of AlGaInN heterostructures grown by OMVPE OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Dave Bour, Jadranka Wagner, W. Goetz, Lucia Romano, B. S. Krusor, F. A. Ponce, N. M. Johnson, R. D. Bringans	1996	1
9	GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition Applied Physics Letters ·D. Fekete, Dave Bour, J. M. Ballantyne, L.F. Eastman	1987	15
10	Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Jaimie L. Richards, Dave Bour, Tetsuji Itoh, Joseph D. Berry, Haixin Yang, G. W. Wicks, L.F. Eastman	1986	14

About Dave Bour

Dave Bour is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 10 papers that have together received 751 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (7 papers), Semiconductor Quantum Structures and Devices (4 papers), Silicon Carbide Semiconductor Technologies (4 papers), Plasma Diagnostics and Applications (2 papers), Semiconductor Lasers and Optical Devices (2 papers), Ga2O3 and related materials (2 papers), Metal and Thin Film Mechanics (2 papers) and Advancements in Semiconductor Devices and Circuit Design (1 paper). The work is most often cited by research in Condensed Matter Physics (653 citations), Electronic, Optical and Magnetic Materials (312 citations), Electrical and Electronic Engineering (601 citations), Structural Biology (12 citations) and Atomic and Molecular Physics, and Optics (153 citations). Dave Bour has collaborated with scholars based in United States. Frequent co-authors include I.C. Kizilyalli, Andrew Edwards, Hui Nie, Don Disney, T. Prunty, Brendan M. Kayes, Hui Nie, Quentin Diduck, Ming Zhang and Brian Alvarez. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena and OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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