B. Schineller

776 total citations
72 papers, 640 citations indexed

About

B. Schineller is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, B. Schineller has authored 72 papers receiving a total of 640 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Condensed Matter Physics, 45 papers in Atomic and Molecular Physics, and Optics and 33 papers in Electrical and Electronic Engineering. Recurrent topics in B. Schineller's work include GaN-based semiconductor devices and materials (54 papers), Semiconductor Quantum Structures and Devices (40 papers) and Ga2O3 and related materials (17 papers). B. Schineller is often cited by papers focused on GaN-based semiconductor devices and materials (54 papers), Semiconductor Quantum Structures and Devices (40 papers) and Ga2O3 and related materials (17 papers). B. Schineller collaborates with scholars based in Germany, Belarus and Italy. B. Schineller's co-authors include M. Heuken, Oliver Schön, K. Heime, R. Beccard, E. V. Lutsenko, Carl Hemmingsson, Г. Позина, G. P. Yablonskii, J. Holst and L. Eckey and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

B. Schineller

68 papers receiving 615 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Schineller Germany 14 497 307 279 252 233 72 640
A. S. Zubrilov Russia 15 495 1.0× 349 1.1× 240 0.9× 243 1.0× 229 1.0× 58 654
Ho Ki Kwon South Korea 15 407 0.8× 314 1.0× 205 0.7× 202 0.8× 189 0.8× 33 579
Takuji Okahisa Japan 7 644 1.3× 249 0.8× 223 0.8× 301 1.2× 335 1.4× 8 686
Kikurou Takemoto Japan 12 600 1.2× 269 0.9× 178 0.6× 326 1.3× 337 1.4× 22 681
U. Karrer Germany 9 402 0.8× 356 1.2× 173 0.6× 213 0.8× 186 0.8× 13 587
Tommy Ive Sweden 13 277 0.6× 252 0.8× 205 0.7× 426 1.7× 205 0.9× 32 615
Tanya Paskova United States 14 580 1.2× 225 0.7× 189 0.7× 284 1.1× 278 1.2× 25 640
J. Limb United States 15 515 1.0× 298 1.0× 175 0.6× 134 0.5× 249 1.1× 23 561
Anand V. Sampath United States 13 469 0.9× 182 0.6× 149 0.5× 217 0.9× 297 1.3× 69 553
Katsunori Yanashima Japan 14 572 1.2× 401 1.3× 336 1.2× 308 1.2× 215 0.9× 28 761

Countries citing papers authored by B. Schineller

Since Specialization
Citations

This map shows the geographic impact of B. Schineller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Schineller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Schineller more than expected).

Fields of papers citing papers by B. Schineller

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Schineller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Schineller. The network helps show where B. Schineller may publish in the future.

Co-authorship network of co-authors of B. Schineller

This figure shows the co-authorship network connecting the top 25 collaborators of B. Schineller. A scholar is included among the top collaborators of B. Schineller based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Schineller. B. Schineller is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Philipps, Simon P., Mathieu Baudrit, Karla Hillerich, et al.. (2016). CPVMatch - Concentrating photovoltaic modules using advanced technologies and cells for highest efficiencies. AIP conference proceedings. 1766. 60002–60002. 5 indexed citations
2.
3.
Zubialevich, Vitaly Z., E. V. Lutsenko, G. P. Yablonskii, et al.. (2008). Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates. Journal of Applied Spectroscopy. 75(1). 96–103. 2 indexed citations
4.
Yablonskii, G. P., H. Kalisch, Rolf A. Jansen, et al.. (2007). Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates. Superlattices and Microstructures. 41(5-6). 400–406. 4 indexed citations
5.
Lutsenko, E. V., Vitaly Z. Zubialevich, T. Malinauskas, et al.. (2006). Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE. physica status solidi (a). 203(7). 1759–1763. 2 indexed citations
6.
Hemmingsson, Carl, T. Paskova, Г. Позина, et al.. (2006). Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor. Journal of Crystal Growth. 300(1). 32–36. 35 indexed citations
7.
Lutsenko, E. V., Vitaly Z. Zubialevich, G. P. Yablonskii, et al.. (2005). Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2724–2727. 6 indexed citations
8.
Marso, M., P. Javorka, Y. Dikme, et al.. (2003). Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate. physica status solidi (a). 200(1). 179–182. 6 indexed citations
9.
Schineller, B., et al.. (2002). Advances in MOCVD technology for research, development and mass production of compound semiconductor devices. Opto-Electronics Review. 237–242. 4 indexed citations
10.
Germain, Marianne, E. Kartheuser, E. V. Lutsenko, et al.. (2002). Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN. Journal of Applied Physics. 91(12). 9827–9834. 13 indexed citations
11.
Rakovich, Yury P., et al.. (2001). Exciton Diffusion in GaN Epitaxial Layers. physica status solidi (b). 228(2). 493–496. 4 indexed citations
12.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2001). Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm. physica status solidi (a). 188(1). 79–82. 6 indexed citations
13.
Yablonskii, G. P., E. V. Lutsenko, Igor P. Marko, et al.. (2001). Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm. Applied Physics Letters. 79(13). 1953–1955. 12 indexed citations
14.
Alam, A., et al.. (2000). MOVPE Growth Optimization Using Computer Supported Design of Experiments (DoE). physica status solidi (a). 180(1). 109–114. 1 indexed citations
15.
Schineller, B., et al.. (1999). Investigation of GaInN films and development of double-hetero (DH) structures for blue and green light emitters. Journal of Crystal Growth. 203(3). 340–348. 5 indexed citations
16.
Marko, Igor P., E. V. Lutsenko, G. P. Yablonskii, et al.. (1999). Influence of UV Light-Assisted Annealing on Optical Properties of InGaN/GaN Heterostructures Grown by MOVPE. physica status solidi (b). 216(1). 175–179. 6 indexed citations
17.
Schineller, B., et al.. (1998). Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE. Journal of Crystal Growth. 189-190. 798–802. 3 indexed citations
18.
Lutsenko, E. V., et al.. (1998). Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE. Materials Science and Engineering B. 51(1-3). 22–25. 1 indexed citations
19.
Schön, Oliver, B. Schineller, M. Heuken, & R. Beccard. (1998). Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN. Journal of Crystal Growth. 189-190. 335–339. 31 indexed citations
20.
Heuken, M., et al.. (1997). MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters. Journal of Electronic Materials. 26(10). 1221–1224. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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